APT40M35JVFR 400V Ω 0.035Ω 93A POWER MOS V® FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Faster Switching • Avalanche Energy Rated • Lower Leakage • FAST RECOVERY BODY DIODE D G • Popular SOT-227 Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT40M35JVFR UNIT 400 Volts Drain-Source Voltage 93 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 700 Watts Linear Derating Factor 5.6 W/°C VGSM PD TJ,TSTG 372 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 93 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 Volts 93 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 46.5A) TYP MAX 0.035 UNIT Ohms Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 BVDSS Characteristic / Test Conditions 050-5892 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT40M35JVFR Characteristic Test Conditions TYP MAX VGS = 0V 16800 20160 VDS = 25V 2400 3360 f = 1 MHz 1070 1605 VGS = 10V 710 1065 VDD = 200V ID = 93A @ 25°C 80 340 120 510 Turn-on Delay Time VGS = 15V 20 40 Rise Time VDD = 200V 30 60 ID = 93A @ 25°C 75 115 RG = 0.6Ω 14 28 TYP MAX C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) Turn-off Delay Time tf Fall Time MIN UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 93 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 372 (VGS = 0V, IS = - 93A) 1.3 Volts 15 V/ns dt 5 t rr Reverse Recovery Time (IS = -93A, di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -93A, di/dt = 100A/µs) Tj = 25°C 2.2 Tj = 125°C 9 IRRM Peak Recovery Current (IS = -93A, di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 33 ns µC Amps THERMAL/ PACKAGE CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX UNIT 0.18 40 °C/W 2500 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. Volts 10 1 Repetitive Rating: Pulse width limited by maximum junction lb•in 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 0.83mH, R = 25Ω, Peak I = 93A j G L 5 I ≤ I = 93A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 400V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 0.1 D=0.5 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5892 Rev A 7-2004 0.2 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 0.0005 10-5 t1 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 APT40M35JVFR 200 VGS=6.5V, 7V, 10V & 15V 160 6V 120 5.5V 80 5V 40 4.5V ID, DRAIN CURRENT (AMPERES) 0 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 80 TJ = +125°C 40 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 80 60 40 20 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE I D = 0.5 I D V GS 5.5V 80 5V 40 4.5V 1.15 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.10 VGS=10V 1.05 1.00 VGS=20V 0.95 0.90 0 40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2 [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 120 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 6V 7V 1.1 1.0 0.9 0.8 7-2004 ID, DRAIN CURRENT (AMPERES) 100 10V 160 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 160 TJ = -55°C 6.5V 0 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 200 VGS=15V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5892 Rev A ID, DRAIN CURRENT (AMPERES) 200 APT40M35JVFR 400 OPERATION HERE LIMITED BY RDS (ON) 100µS 100 50 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 60,000 10µS 1mS 10 10mS 5 100mS DC 1 TC =+25°C TJ =+150°C SINGLE PULSE .5 = 0.5 I D IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) D [Cont.] VDS=80V 16 VDS=200V 12 VDS=320V 8 4 0 Coss 5,000 Crss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I 10,000 1,000 .1 20 Ciss 300 TJ =+150°C 100 TJ =+25°C 50 10 5 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 0 250 500 750 1000 1250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 050-5892 Rev A 7-2004 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. "UL Recognized" File No. E145592 APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.