Schottky Barrier Diodes (SBD) MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) Reverse voltage (DC) Unit VR 40 V Repetitive peak reverse voltage VRRM 40 V Average forward current IF(AV) 500 mA Non-repetitive peak forward surge current* IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.15 − 0.05 Rating 3 0.9 ± 0.1 Symbol 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 − 0 + 0.1 ■ Features 1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3-pin) Marking Symbol: M2W Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 35 V 100 µA Forward voltage (DC) VF IF = 500 mA 0.55 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 60 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 5 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3J700 Schottky Barrier Diodes (SBD) IF V F 103 25°C − 20°C 10 1 10−1 Ta = 100°C 0.6 0.5 IF = 500 mA 0.4 0.3 100 mA 0.2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 40 80 120 160 200 10 1 000 70 300 60 50 40 30 20 0 120 Ambient temperature Ta 2 10 160 (°C) 200 0 10 20 30 20 30 40 50 60 IF(surge) tW 80 10 80 0 Reverse voltage VR (V) Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) 102 40 10 Ct VR VR = 15 V 0 25°C Ambient temperature Ta (°C) 103 1 −40 102 1 0 IR T a 104 103 10 mA 0.1 10−2 Reverse current IR (µA) Forward voltage VF (V) Forward current IF (mA) 104 0.7 Ta = 100°C 102 IR VR VF Ta 0.8 40 50 Reverse voltage VR (V) 60 Ta = 25°C IF(surge) tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30