Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit : mm 2.8 1.45 0.95 3 + 0.1 1.9 ± 0.2 1 V Repetitive peak reverse voltage VRRM 25 V Non-repetitive peak forward surge current*1 IFSM 3 A Average forward current*2 IF(AV) 1.0 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : With a alumina PC board + 0.1 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Unit 20 0.8 Rating VR 1.1 + 0.2 − 0.1 Symbol 0.16 − 0.06 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.65 ± 0.15 1.5 − 0.05 0.95 + 0.2 2.9 − 0.05 • Mini type 3-pin package • Low VF or Low IR type: VF < 0.45 V, IR < 100 µA • Allowing to rectify under (IF(AV) = 1 A) condition Reverse voltage (DC) + 0.25 0.65 ± 0.15 ■ Features + 0.2 − 0.3 0.4 − 0.05 For rectification For protection against reverse current 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M5N Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 20 V 100 µA Forward voltage (DC) VF IF = 1.0 A 0.45 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 120 pF Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 1 MA3XD15 Schottky Barrier Diodes (SBD) 1 10−3 10−1 10−2 10−3 10−4 2 Ct VR IR V R 200 Terminal capacitance Ct (pF) 10−2 Reverse current IR (A) Forward current IF (A) IF V F 10 10−4 10−5 10−6 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 0.6 10−7 0 5 10 15 20 25 Reverse voltage VR (V) 30 160 120 80 40 0 0 4 8 12 16 Reverse voltage VR (V) 20