PANASONIC MA3XD15

Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
Unit : mm
2.8
1.45
0.95
3
+ 0.1
1.9 ± 0.2
1
V
Repetitive peak reverse voltage
VRRM
25
V
Non-repetitive peak forward
surge current*1
IFSM
3
A
Average forward current*2
IF(AV)
1.0
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : With a alumina PC board
+ 0.1
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Unit
20
0.8
Rating
VR
1.1
+ 0.2
− 0.1
Symbol
0.16 − 0.06
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.65 ± 0.15
1.5 − 0.05
0.95
+ 0.2
2.9 − 0.05
• Mini type 3-pin package
• Low VF or Low IR type: VF < 0.45 V, IR < 100 µA
• Allowing to rectify under (IF(AV) = 1 A) condition
Reverse voltage (DC)
+ 0.25
0.65 ± 0.15
■ Features
+ 0.2
− 0.3
0.4 − 0.05
For rectification
For protection against reverse current
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M5N
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 20 V
100
µA
Forward voltage (DC)
VF
IF = 1.0 A
0.45
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
120
pF
Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
1
MA3XD15
Schottky Barrier Diodes (SBD)
1
10−3
10−1
10−2
10−3
10−4
2
Ct  VR
IR  V R
200
Terminal capacitance Ct (pF)
10−2
Reverse current IR (A)
Forward current IF (A)
IF  V F
10
10−4
10−5
10−6
0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF
(V)
0.6
10−7
0
5
10
15
20
25
Reverse voltage VR (V)
30
160
120
80
40
0
0
4
8
12
16
Reverse voltage VR (V)
20