IRG4PC50KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free VCES = 600V VCE(on) typ. = 1.84V G @VGE = 15V, IC = 30A E n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC50K and IRGPC50M devices Base part number Package Type IRG4PC50KPbF TO-247AC G CE TO-247AC Standard Pack Form Quantity Tube Orderable Part Number 25 IRG4PC50KPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 52 30 104 104 10 ±20 170 200 78 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Thermal Resistance Parameter RθJC RθCS RθJA Wt 1 Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight www.irf.com © 2015 International Rectifier Typ. Max. 0.24 6 (0.21) 0.64 40 Submit Datasheet Feedback Units °C/W g (oz) June 2, 2015 IRG4PC50KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage V(BR)CES V(BR)ECS VCE(ON) Collector-to-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage g fe Forward Transconductance ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. 600 18 3.0 17 Typ. Max. Units Conditions V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A 0.47 V/°C VGE = 0V, IC = 1.0mA 1.84 2.2 IC = 30A 2.19 IC = 52A V 1.79 IC = 30A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA -12 mV/°C VCE = VGE, IC = 250µA 24 S VCE = 100 V, IC = 30A 250 5000 ±100 µA nA VGE = 15V See Fig.2, 5 VGE = 0V, VCE = 600V, TJ = 25°C VGE = 0V, VCE = 600V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. 200 25 85 38 34 160 79 0.49 0.68 1.12 37 35 260 170 2.34 13 3200 370 95 Max. Units Conditions 300 IC = 30A 38 nC VCC = 400V See Fig.8 130 VGE = 15V TJ = 25°C ns 240 IC = 30A, VCC = 480V 120 VGE = 15V, RG = 5.0Ω Energy losses include "tail" mJ See Fig. 9,10,14 1.4 µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V TJ = 150°C, IC = 30A, VCC = 480V ns VGE = 15V, RG = 5.0Ω Energy losses include "tail" mJ See Fig. 11,14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by Repetitive rating; pulse width limited by maximum VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0 Ω Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) junction temperature. Pulse width 5.0µs, single shot. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRG4PC50KPbF 70 For both: Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 40W 60 50 40 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 30 I 20 Ideal diodes 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 25 °C 100 100 TJ = 150 °C 10 1 V GE = 15V 20μs PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 3 www.irf.com © 2015 International Rectifier I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 TJ = 150 °C 10 TJ = 25 °C 1 V CC = 50V 5μs PULSE WIDTH 5 6 7 8 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics Submit Datasheet Feedback June 2, 2015 12 IRG4PC50KPbF 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 60 A 2.0 IC = 30 A IC = 15 A 1.0 -60 -40 -20 Fig. 4 - Maximum Collector Current vs. Case Temperature 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , Case Temperature ( °C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRG4PC50KPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 4000 Cies 3000 2000 1000 0 Coes Cres 1 10 20 VGE , Gate-to-Emitter Voltage (V) 5000 16 12 8 4 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 V CC = 480V V GE = 15V TJ = 25 ° C I C = 30A 2.0 1.0 0 10 20 30 40 Ω RG , Gate Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance 5 www.irf.com © 2015 International Rectifier 40 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 0.0 0 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 4.0 VCC = 400V I C = 30A 50 RG = 5.0 Ohm Ω VGE = 15V VCC = 480V 10 IC = 60 A IC = 30 A IC = 15 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature Submit Datasheet Feedback June 2, 2015 IRG4PC50KPbF RG TJ VCC VGE 1000 5.0Ω = 5.0Ohm = 150 °C = 480V = 15V I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) 8.0 6.0 4.0 2.0 0.0 10 20 30 40 50 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 www.irf.com © 2015 International Rectifier 60 VGE = 20V T J = 125 oC 100 10 SAFE OPERATING AREA 1 10 100 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA Submit Datasheet Feedback June 2, 2015 1000 IRG4PC50KPbF L D.U.T. VC * 50V RL = 0 - 480V 1000V c 480V 4 X IC@ 25°C 480μF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V c d * Driver same type as D.U.T., VC = 480V e c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5μs E on E off E ts = (Eon +Eoff ) 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRG4PC50KPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE : T HIS IS AN IRFPE30 WITH AS S EMBLY LOT CODE 5657 AS S E MBLE D ON WW 35, 2001 IN THE AS S EMBLY LINE "H" Note: "P" in as sembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 AS S EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRG4PC50KPbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) Moisture Sensitivity Level RoHS Compliant TO-247AC †† N/A Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Revision History Date 6/2/2015 Comments • Updated data sheet with corporate template. • Updated package outline on page8. • Removed ICES = 2uA @ VCE = 10V on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015