PD - 97132 IRGP4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c TJ max 300 1.90 250 150 C V V A °C C E G G C E n-channel G G ate TO-247AC C C ollector E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C Max. Units ±30 V 70 A Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V IC @ TC = 100°C Continuous Collector, VGE @ 15V 40 IRP @ TC = 25°C Repetitive Peak Current c 250 PD @TC = 25°C Power Dissipation 160 PD @TC = 100°C Power Dissipation 63 W Linear Derating Factor 1.3 W/°C TJ Operating Junction and -40 to + 150 °C TSTG Storage Temperature Range 300 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lbxin (1.1Nxm) N Thermal Resistance Parameter RθJC (IGBT) RθCS RθJA www.irf.com Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight Typ. Max. ––– 0.24 ––– 6.0 (0.21) 0.8 ––– 40 ––– Units °C/W g (oz) 1 4/17/08 IRGP4086PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Conditions Typ. Max. Units Collector-to-Emitter Breakdown Voltag 300 ––– ––– ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.29 ––– ––– 1.29 1.46 VGE = 0V, ICE = 1 mA V V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 25A e ––– 1.49 1.67 VGE = 15V, ICE = 40A e ––– 1.90 2.10 ––– 2.57 2.96 BVCES VCE(on) Static Collector-to-Emitter Voltage V VGE = 15V, ICE = 120A e VGE = 15V, ICE = 70A, TJ = 150°C ––– 2.27 ––– Gate Threshold Voltage 2.6 ––– 5.0 V ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient ICES Collector-to-Emitter Leakage Current ––– -11 ––– mV/°C ––– 2.0 25 μA VGE(th) IGES 5.0 ––– VCE = 300V, VGE = 0V, TJ = 100°C 100 ––– VCE = 300V, VGE = 0V, TJ = 150°C ––– ––– 100 ––– ––– -100 gfe Forward Transconductance ––– 29 ––– S Qg Total Gate Charge ––– 65 ––– nC Qgc Gate-to-Collector Charge ––– 22 ––– td(on) Turn-On delay time — 36 — tr Rise time — 31 — td(off) Turn-Off delay time — 112 — tf Fall time — 65 — td(on) Turn-On delay time — 30 — tr Rise time — 33 — td(off) Turn-Off delay time — 145 — tf Fall time — 98 — tst Shoot Through Blocking Time 100 ––– ––– ––– 1075 ––– ––– 1432 ––– ––– 2250 ––– Ciss Input Capacitance Coss Output Capacitance ––– 110 ––– Crss Reverse Transfer Capacitance ––– 58 ––– LC Internal Collector Inductance ––– 5.0 ––– nA Internal Emitter Inductance Notes: Half sine wave with duty cycle = 0.1, ton=2μsec. Rθ is measured at TJ of approximately 90°C. 2 ––– 13 ––– VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH TJ = 25°C IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH TJ = 150°C ns VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40μF, VGE = 15V μJ VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40μF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C VGE = 0V pF VCE = 30V ƒ = 1.0MHz, See Fig.13 Between lead, nH LE VCE = 300V, VGE = 0V ––– Gate-to-Emitter Reverse Leakage Energy per Pulse VCE = VGE, ICE = 500μA ––– Gate-to-Emitter Forward Leakage EPULSE VGE = 15V, ICE = 70A e 6mm (0.25in.) from package and center of die contact Pulse width ≤ 400μs; duty cycle ≤ 2%. www.irf.com IRGP4086PbF 240 240 VGE = 18V 200 VGE = 15V 200 VGE = 15V 160 VGE = 10V 160 VGE = 10V VGE = 12V VGE = 8.0V ICE (A) ICE (A) VGE = 18V VGE = 6.0V 120 VGE = 8.0V VGE = 6.0V 120 80 80 40 40 0 VGE = 12V 0 0 4 8 12 16 0 4 8 VCE (V) Fig 1. Typical Output Characteristics @ 25°C 16 Fig 2. Typical Output Characteristics @ 75°C 240 240 VGE = 18V 200 VGE = 15V 160 VGE = 10V VGE = 18V VGE = 12V VGE = 8.0V ICE (A) ICE (A) 12 VCE (V) VGE = 6.0V 120 200 VGE = 15V 160 VGE = 10V VGE = 8.0V VGE = 6.0V 120 80 80 40 40 0 VGE = 12V 0 0 4 8 12 16 0 4 8 VCE (V) 12 16 VCE (V) Fig 3. Typical Output Characteristics @ 125°C Fig 4. Typical Output Characteristics @ 150°C 240 10 IC = 25A 200 VCE (V) 160 ICE (A) 8 TJ = 25°C TJ = 150°C 120 TJ = 25°C TJ = 150°C 6 4 80 2 40 0 0 2 4 6 8 10 12 14 VGE (V) Fig 5. Typical Transfer Characteristics www.irf.com 16 5 10 15 20 VGE (V) Fig 6. VCE(ON) vs. Gate Voltage 3 IRGP4086PbF 80 300 Repetitive Peak Current (A) IC, Collector Current (A) 70 60 50 40 30 20 200 100 ton= 2μs Duty cycle = 0.1 Half Sine Wave 10 0 0 0 25 50 75 100 125 25 150 T C, Case Temperature (°C) Fig 7. Maximum Collector Current vs. Case Temperature 75 100 125 150 Case Temperature (°C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1600 1500 1400 VCC = 240V 1300 L = 220nH C = variable L = 220nH C = 0.4μF 1400 100°C 1200 Energy per Pulse (μJ) Energy per Pulse (μJ) 50 1100 1000 900 800 25°C 700 100°C 1200 1000 800 25°C 600 600 400 500 200 400 160 170 180 190 200 210 220 150 160 170 180 190 200 210 220 230 240 230 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 2000 VCC = 240V L = 220nH t = 1μs half sine C= 0.4μF 100 1200 10 μs IC (A) Energy per Pulse (μJ) 1600 C= 0.3μF 800 400 100 μs 10 1ms C= 0.2μF 1 0 25 50 75 100 125 TJ, Temperature (ºC) Fig 11. EPULSE vs. Temperature 4 150 1 10 100 1000 VCE (V) Fig 12. Forward Bias Safe Operating Area www.irf.com IRGP4086PbF 25 VGE, Gate-to-Source Voltage (V) 10000 Capacitance (pF) Cies 1000 100 Coes Cres ID= 25A VDS = 240V VDS = 200V 20 VDS = 150V 15 10 5 0 10 0 100 200 0 300 20 VCE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 40 60 80 100 QG Total Gate Charge (nC) Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) τC τ1 τ2 τ2 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) τ3 τ3 τ τι (sec) 0.084697 0.000038 0.374206 0.001255 0.341867 0.013676 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 5 IRGP4086PbF A RG C DRIVER PULSE A L VCC B RG PULSE B Ipulse DUT tST Fig 16b. tst Test Waveforms Fig 16a. tst and EPULSE Test Circuit VCE Energy L IC Current VCC DUT 0 1K Fig 16c. EPULSE Test Waveforms 6 Fig. 17 - Gate Charge Circuit (turn-off) www.irf.com IRGP4086PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN T HE AS S EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFPE30 56 135H 57 DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and Data and specifications subject to change without notice. procedures, which by their nature do not include qualification to This product has been designed for the Industrial market. all possible or even all widely used applications. Without Qualification Standards can be found on IR’s Web site. limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/08 www.irf.com 7