Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standard outline • UL pending • Totally Lead-Free VCES = 600V VCE(on) typ. = 1.10V G @VGE = 15V, IC = 100A E n-channel Benefits • Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages SOT-227 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current c Clamped Inductive Load Current d Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy e RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. Units 600 200 100 400 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf •in(1.3N•m) V A V mJ V W °C Thermal Resistance Parameter RθJC RθCS Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module Typ. Max. ––– 0.05 30 0.20 ––– ––– Units °C/W gm 1 GA200SA60SP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250μA Emitter-to-Collector Breakdown Voltage f 18 — — V VGE = 0V, IC = 1.0A ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA — 1.10 1.3 IC = 100A VGE = 15V Collector-to-Emitter Saturation Voltage — 1.33 — IC = 200A See Fig.2, 5 VCE(ON) V — 1.02 — IC = 100A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250μA ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 2 mA gfe Forward Transconductance g 90 150 — S VCE = 100V, IC = 100A — — 1.0 VGE = 0V, VCE = 600V mA ICES Zero Gate Voltage Collector Current — — 10 VGE = 0V, VCE = 10V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±250 nA VGE = ±20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 770 100 260 78 56 890 390 0.98 17.4 18.4 72 60 1500 660 35.7 5.0 Max. Units Conditions 1200 IC = 100A 150 nC VCC = 400V See Fig. 8 380 VGE = 15V — — TJ = 25°C ns 1300 IC = 100A, VCC = 480V 580 VGE = 15V, RG = 2.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 13 25.5 — TJ = 150°C, — IC = 100A, VCC = 480V ns — VGE = 15V, RG = 2.0Ω — Energy losses include "tail" — mJ See Fig. 10,11, 13 — nH Between lead, and center of the die contact 16250 — VGE = 0V 1040 — pF VCC = 30V See Fig. 7 190 — ƒ = 1.0MHz Notes: c Repetitive rating; VGE = 20V, pulse width limited by f Pulse width ≤ 80μs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 15 ) d VCC = 80%(VCES), VGE = 20V, L = 10μH, RG = 2.0Ω, (See fig. 14) g Pulse width 5.0μs, single shot. e Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com GA200SA60SP 250 For both: 200 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 140W 150 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 100 50 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 150 °C 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 TJ = 150 °C TJ = 25 °C 100 TJ = 25 °C 10 V GE = 15V 20µs PULSE WIDTH 1 0.5 1.0 1.5 2.0 2.5 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 V CC = 50V 5µs PULSE WIDTH 5 6 7 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA200SA60SP 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 200 150 100 50 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 400 A 2.0 IC = 200 A IC = 100 A 1.0 -60 -40 -20 Fig. 4 - Maximum Collector Current vs. Case Temperature 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , Case Temperature ( °C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.1 D = 0.50 0.01 0.001 0.00001 0.20 0.10 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D =t 1 / t2 2. Peak T= J PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA200SA60SP VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 24000 Cies 18000 12000 Coes Cres 6000 0 1 10 20 VGE , Gate-to-Emitter Voltage (V) 30000 16 12 8 4 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 1000 V CC = 480V V GE = 15V 24 TJ = 25 °C I C = 200A 23 22 21 20 19 10 20 30 40 ( Ω) RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 200 400 600 800 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 25 0 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 18 VCC = 400V I C = 100A 110A 50 RG Ω Ohm G == 2.0 VGE = 15V VCC = 480V IC = 350A 400A 100 IC = 200A IC = 100A 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA200SA60SP 1000 R ΩΩ RGG ==2.0 Ohm T J = 150 ° C VCC = 480V VGE = 15V I C , Collector Current (A) Total Switching Losses (mJ) 160 120 80 40 VGE = 20V T J = 125 oC 100 10 SAFE OPERATING AREA 0 100 1 150 200 250 300 350 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current 6 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com GA200SA60SP L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 GA200SA60SP SOT-227 Package Details Dimensions are shown in millimeters ( inches ) 38.30 ( 1.508 ) 37.80 ( 1.488 ) 4.40 (.173 ) 4.20 (.165 ) CHAMFER 2.00 ( .079 ) X 457 LEAD ASSIGMENTS E -A4 E S C 3 6.25 ( .246 ) 12.50 ( .492 ) 1 C D 4 1 25.70 ( 1.012 ) 25.20 ( .992 ) E G IGBT -B- A1 K2 R FULL 7.50 ( .295 ) 15.00 ( .590 ) 2 S E G HEXFET IGBT 3 4 1 2 3 2 K1 A2 HEXFRED 30.20 ( 1.189 ) 29.80 ( 1.173 ) 4X 2.10 ( .082 ) 1.90 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .082 ) 1.90 ( .075 ) 12.30 ( .484 ) 11.80 ( .464 ) -C0.12 ( .005 ) Tube QUANTITIES PER TUBE IS 10 M4 SREW AND WASHER INCLUDED 8 www.irf.com GA200SA60SP Ordering Information Table Device Code G A 200 S A 60 S P 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - Gen. 4, IGBT Sicilon, DBC Construction 3 - Current Rating (200 = 200A) 4 - Single switch, no diode 5 - SOT-227 6 - Voltage Rating (60 = 600V) 7 - Speed/ Type (S = Standard Speed) 8 - y none = Standard Production yP = Lead-Free Data and specifications subject to change without notice. This product has been designed for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/06 www.irf.com 9