IRF GA200SA60S

Bulletin I27235 07/06
GA200SA60SP
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
• Lowest conduction losses available
• Fully isolated package ( 2,500 volt AC)
• Very low internal inductance ( 5 nH typ.)
• Industry standard outline
• UL pending
• Totally Lead-Free
VCES = 600V
VCE(on) typ. = 1.10V
G
@VGE = 15V, IC = 100A
E
n-channel
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current c
Clamped Inductive Load Current d
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy e
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
200
100
400
400
± 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
V
A
V
mJ
V
W
°C
Thermal Resistance
Parameter
RθJC
RθCS
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
Max.
–––
0.05
30
0.20
–––
–––
Units
°C/W
gm
1
GA200SA60SP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600 —
—
V
VGE = 0V, IC = 250μA
Emitter-to-Collector Breakdown Voltage f 18
—
—
V
VGE = 0V, IC = 1.0A
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —
0.62 —
V/°C VGE = 0V, IC = 1.0mA
— 1.10 1.3
IC = 100A
VGE = 15V
Collector-to-Emitter Saturation Voltage
— 1.33 —
IC = 200A
See Fig.2, 5
VCE(ON)
V
— 1.02 —
IC = 100A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250μA
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage
—
-10
— mV/°C VCE = VGE, IC = 2 mA
gfe
Forward Transconductance g
90 150
—
S
VCE = 100V, IC = 100A
—
—
1.0
VGE = 0V, VCE = 600V
mA
ICES
Zero Gate Voltage Collector Current
—
—
10
VGE = 0V, VCE = 10V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±250 nA VGE = ±20V
V(BR)CES
V(BR)ECS
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
770
100
260
78
56
890
390
0.98
17.4
18.4
72
60
1500
660
35.7
5.0
Max. Units
Conditions
1200
IC = 100A
150
nC
VCC = 400V
See Fig. 8
380
VGE = 15V
—
—
TJ = 25°C
ns
1300
IC = 100A, VCC = 480V
580
VGE = 15V, RG = 2.0Ω
—
Energy losses include "tail"
—
mJ
See Fig. 9, 10, 13
25.5
—
TJ = 150°C,
—
IC = 100A, VCC = 480V
ns
—
VGE = 15V, RG = 2.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 10,11, 13
—
nH
Between lead,
and center of the die contact
16250 —
VGE = 0V
1040 —
pF
VCC = 30V
See Fig. 7
190 —
ƒ = 1.0MHz
Notes:
c Repetitive rating; VGE = 20V, pulse width limited by
f Pulse width ≤ 80μs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 15 )
d VCC = 80%(VCES), VGE = 20V, L = 10μH, RG = 2.0Ω,
(See fig. 14)
g Pulse width 5.0μs, single shot.
e Repetitive rating; pulse width limited by maximum
junction temperature.
2
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GA200SA60SP
250
For both:
200
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 140W
150
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
100
50
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 150 °C
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
TJ = 150 °C
TJ = 25 °C
100
TJ = 25 °C
10
V GE = 15V
20µs PULSE WIDTH
1
0.5
1.0
1.5
2.0
2.5
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
V CC = 50V
5µs PULSE WIDTH
5
6
7
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
GA200SA60SP
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
200
150
100
50
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 400 A
2.0
IC = 200 A
IC = 100 A
1.0
-60 -40 -20
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
TC , Case Temperature ( °C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.1
D = 0.50
0.01
0.001
0.00001
0.20
0.10
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =t 1 / t2
2. Peak T=
J PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA200SA60SP
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
24000
Cies
18000
12000
Coes
Cres
6000
0
1
10
20
VGE , Gate-to-Emitter Voltage (V)
30000
16
12
8
4
0
100
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1000
V CC = 480V
V GE = 15V
24 TJ = 25 °C
I C = 200A
23
22
21
20
19
10
20
30
40
( Ω)
RG , Gate Resistance (Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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200
400
600
800
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25
0
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
18
VCC = 400V
I C = 100A
110A
50
RG
Ω
Ohm
G == 2.0
VGE = 15V
VCC = 480V
IC = 350A
400A
100
IC = 200A
IC = 100A
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
GA200SA60SP
1000
R
ΩΩ
RGG ==2.0
Ohm
T J = 150 ° C
VCC = 480V
VGE = 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
160
120
80
40
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
0
100
1
150
200
250
300
350
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
6
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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GA200SA60SP
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X IC@25°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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GA200SA60SP
SOT-227 Package Details
Dimensions are shown in millimeters ( inches )
38.30 ( 1.508 )
37.80 ( 1.488 )
4.40 (.173 )
4.20 (.165 )
CHAMFER
2.00 ( .079 ) X 457
LEAD ASSIGMENTS
E
-A4
E
S
C
3
6.25 ( .246 )
12.50 ( .492 )
1
C
D
4
1
25.70 ( 1.012 )
25.20 ( .992 )
E G
IGBT
-B-
A1 K2
R FULL
7.50 ( .295 )
15.00 ( .590 )
2
S
E
G
HEXFET
IGBT
3
4
1
2
3
2
K1 A2
HEXFRED
30.20 ( 1.189 )
29.80 ( 1.173 )
4X
2.10 ( .082 )
1.90 ( .075 )
8.10 ( .319 )
7.70 ( .303 )
0.25 ( .010 ) M C A M B M
2.10 ( .082 )
1.90 ( .075 )
12.30 ( .484 )
11.80 ( .464 )
-C0.12 ( .005 )
Tube
QUANTITIES PER TUBE IS 10
M4 SREW AND WASHER INCLUDED
8
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GA200SA60SP
Ordering Information Table
Device Code
G
A
200
S
A
60
S
P
1
2
3
4
5
6
7
8
1
-
Insulated Gate Bipolar Transistor (IGBT)
2
-
Gen. 4, IGBT Sicilon, DBC Construction
3
-
Current Rating (200 = 200A)
4
-
Single switch, no diode
5
-
SOT-227
6
-
Voltage Rating (60 = 600V)
7
-
Speed/ Type (S = Standard Speed)
8
-
y none = Standard Production
yP
= Lead-Free
Data and specifications subject to change without notice.
This product has been designed for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/06
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9