IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G G VCE(ON) typ. = 1.7V @ IC = 48A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications Optimized diode for full bridge hard switch converters Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Enables short circuit protection scheme Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation Lead-free, RoHS compliant Environmentally friendly Package Type IRGP6660DPBF IRGP6660D-EPBF TO-247AC TO-247AD E E Emitter Low VCE(ON) and switching losses Base part number C IRGP6660D-EPbF TO-247AD IRGP6660DPbF TO-247AC n-channel Applications • Welding • H Bridge Converters C Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6660DPBF IRGP6660D-EPBF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IFRM @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Repetitive Peak Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 95 60 144 192 30 192 ±20 330 167 -40 to +175 Units V A V W C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2014 International Rectifier Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– Submit Datasheet Feedback Max. 0.45 3.35 ––– 40 Units °C/W November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ΔV(BR)CES/ΔTJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 — Typ. — 0.65 — 1.65 — 2.05 — 2.10 VGE(th) Gate Threshold Voltage 4.0 — Threshold Voltage Temperature Coeff. — -17 ΔVGE(th)/ΔTJ gfe Forward Transconductance — 33 — 1.0 ICES Collector-to-Emitter Leakage Current — 630 Gate-to-Emitter Leakage Current — — IGES — 1.8 Diode Forward Voltage Drop VFM — 1.3 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 150µA V/°C VGE = 0V, IC = 2mA (25°C-175°C) 1.95 IC = 48A, VGE = 15V, TJ = 25°C V — IC = 48A, VGE = 15V, TJ = 150°C — IC = 48A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 1.4mA — mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C) — S VCE = 50V, IC = 48A, PW = 20µs 75 µA VGE = 0V, VCE = 600V — VGE = 0V, VCE = 600V, TJ = 175°C ±100 nA VGE = ±20V 2.8 V IF = 8.0A — IF = 8.0A, TJ = 175°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 135 70 22 — — — µJ ns A Min. — — — — — — — — — — — Typ. 95 28 35 0.6 1.3 1.9 60 50 155 30 0.78 Max — — — — — — — — — — — Units — — — — — — — — — 1.6 2.38 45 55 160 60 2970 175 85 — — — — — — — — — mJ nC mJ ns ns pF FULL SQUARE Conditions IC = 48A VGE = 15V VCC = 400V IC = 48A, VCC = 400V, VGE=15V RG = 10Ω, L = 210µH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 48A, VCC = 400V, VGE=15V RG = 10Ω, L = 210µH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 192A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 8.0A VGE = 15V, Rg = 10Ω Notes: VCC = 80% (VCES), VGE = 20V, L = 210µH, RG = 10Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF 100 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 167W 90 Load Current ( A ) 80 70 60 Square Wave: VCC 50 I 40 30 Diode as specified 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 350 300 80 250 200 Ptot (W) IC (A) 60 40 150 100 20 50 0 0 25 50 75 100 125 150 175 25 TC (°C) 50 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 100 10µsec 100µsec 1msec 100 IC (A) IC (A) 10 DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 1 0.1 1 10 100 VCE (V) Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 V CE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF 200 200 150 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 100 ICE (A) ICE (A) 150 100 50 50 0 0 0 2 4 6 8 0 10 2 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 200 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V 175°C 25°C -40°C IF (A) 150 100 100 50 50 0 0 0 2 4 6 8 10 0.0 1.0 2.0 V CE (V) 7 6 6 V CE (V) ICE = 24A ICE = 48A 4 4.0 5.0 6.0 7.0 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics 7 5 3.0 VF (V) Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs V CE (V) 8 V CE (V) 150 ICE = 96A 3 5 ICE = 24A ICE = 48A 4 ICE = 96A 3 2 2 1 1 0 0 5 10 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 6 V CE (V) 200 ICE (A) V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V www.irf.com © 2014 International Rectifier 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF 7 200 6 ICE = 24A ICE = 48A 150 ICE = 96A 4 ICE (A) V CE (V) 5 TJ = 25°C TJ = 175°C 3 100 2 50 1 0 0 5 10 15 20 2 4 6 8 10 12 14 16 V GE (V) V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 6.0 1000 Swiching Time (ns) 5.0 Energy (mJ) 4.0 3.0 EOFF 2.0 1.0 tdOFF tF 100 tdON EON tR 0.0 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 70 80 90 100 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 210µH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 210µH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 5.0 tdOFF Swiching Time (ns) 4.0 Energy (mJ) 60 EOFF 3.0 2.0 EON tR 100 tF tdON 1.0 10 0.0 0 20 40 60 80 100 RG ( Ω ) Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V 5 www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 RG ( Ω ) Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF 30 25 25 20 20 IRR (A) IRR (A) RG = 10Ω RG = 22Ω 15 RG = 47Ω 15 10 10 RG = 100Ω 5 5 4 6 8 10 12 14 16 18 0 20 40 60 80 100 IF (A) RG ( Ω) Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 25 1250 16A 20 1000 22Ω QRR (nC) IRR (A) 47Ω 15 10 500 5 250 0 200 400 600 800 1000 100Ω 750 8.0A 4.0A 0 1200 200 400 600 800 1200 diF /dt (A/µs) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 8.0A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 25 500 RG = 10Ω 20 RG = 22Ω 200 Time (µs) RG = 47Ω 150 RG = 100Ω 100 Isc Tsc 400 15 300 10 200 5 100 0 50 0 5 10 15 20 25 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C www.irf.com © 2014 International Rectifier Current (A) Energy (µJ) 1000 diF /dt (A/µs) 250 6 10Ω 0 9 10 11 12 13 14 15 16 V GE (V) Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF 10000 V GE, Gate-to-Emitter Voltage (V) 16 Capacitance (pF) Cies 1000 100 Coes Cres 10 V CES = 400V 14 V CES = 300V 12 10 8 6 4 2 0 0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80 90 100 V CE (V) Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 48A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 70 D=0.1 Repetitive Peak Current (A) 60 50 D=0.2 40 30 D=0.3 20 10 0 100 125 150 175 Case Temperature (°C) Fig. 26 - Typical Gate Charge vs. VGE Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ2 τ1 τ2 τ3 τ4 τ3 τ4 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 τC Ri (°C/W) τi (sec) 0.007832 0.000007 0.117473 0.000170 0.181692 0.003719 0.142534 0.023371 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci= τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 τC Ri (°C/W) τi (sec) 0.116586 0.000047 1.136344 0.000298 1.434449 0.002865 0.664097 0.026578 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com © 2014 International Rectifier Fig.C.T.6 - BVCES Filter Circuit Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF 400 90% ICE 500 80 400 60 300 60 200 40 40 200 10% VCE 10% ICE Eon Loss Eoff Loss -0.3 0 0 0 -0.5 -20 -100 -20 -0.6 -0.2 -0.5 -0.4 -0.2 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 20 600 600 15 500 500 QRR 10 400 300 Vce (V) 0 -5 -10 VCE 400 tRR 5 IF (A) 20 10% VCE 0 -0.6 80 90% ICE 10% ICE -100 100 TEST CURRENT 100 20 100 tr Peak IRR 300 ICE 200 200 100 Ice (A) VCE (V) 300 100 120 ICE (A) tf 600 VCE (V) 500 120 ICE (A) 600 100 -15 0 -20 -100 -25 -0.2 0.1 0.3 0.6 time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 0 www.irf.com © 2014 International Rectifier -100 -5 0 5 10 time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6660DPbF/IRGP6660D-EPbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) †† Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/14/2014 Comments • Added IFM Diode Maximum Forward Current = 192A with the note on page 1. • Removed note from switching losses test condition on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014