IRG4PSC71K Data Sheet (281 KB, EN)

PD - 91683B
IRG4PSC71K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High abort circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
VCES = 600V
VCE(on) typ. = 1.83V
G
@VGE = 15V, IC = 60A
E
n-channel
Benefits
• Highest current rating IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Super-247™
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tSC
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current À
Clamped Inductive Load Current Á
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Â
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
600
85 †
60
200
200
10
± 20
180
350
140
-55 to + 150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm from case )
Thermal Resistance\ Mechanical
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
Typ.
Max.
–––
–––
–––
20.0(2.0)
–––
–––
0.24
–––
–––
6 (0.21)
0.36
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
3/18/05
IRG4PSC71K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 –––
Emitter-to-Collector Breakdown Voltage à 18 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––
0.5
––– 1.83
V(BR)CES
V(BR)ECS
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance Ä
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
–––
–––
3.0
–––
31
–––
–––
–––
–––
2.20
1.81
–––
-8.0
46
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
–––
V
VGE = 0V, IC = 1.0A
––– V/°C VGE = 0V, IC = 10mA
2.3
IC = 60A
VGE = 15V
–––
IC = 100A
See Fig.2, 5
V
–––
IC = 60A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 1.5mA
–––
S
VCE = 50V, IC = 60A
500
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
5.0
mA VGE = 0V, VCE = 600V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
ƒ
Repetitive rating; pulse width limited by maximum
junction temperature.
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
340
44
160
34
54
251
89
0.79
1.98
2.77
—
—
—
—
—
—
—
—
—
—
37
56
356
177
5.5
13
6900
730
190
Max. Units
Conditions
510
IC = 60A
66
nC
VCC = 400V
See Fig.8
240
VGE = 15V
—
—
TJ = 25°C
ns
377
IC = 60A, VCC = 480V
133
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ
and diode reverse recovery
3.1
See Fig. 9,10,18
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
—
TJ = 150°C,
See Fig. 10,11,18
—
IC = 60A, VCC = 480V
ns
—
VGE = 15V, RG = 5.0Ω,
—
Energy losses include "tail"
—
mJ
and diode reverse recovery
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
„
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
…
Pulse width 5.0µs, single shot.
†
Current limited by the package, (Die current = 100A)
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IRG4PSC71K
120
For both:
90
Load Current (A)
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink= 90°C
Gate drive as specified
Power Dissipation = 58W
Clamp voltage:
80% of rated
Square wave:
60
60% of rated
voltage
30
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Ic , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
1000
100
100
TJ = 150°C
10
TJ = 25°C
VGE = 15V
20µs PULSE WIDTH A
1
0
1
2
3
4
TJ = 150 °C
10
1
TJ = 25 °C
V CC = 50V
5µs PULSE WIDTH
5
6
7
8
9
10
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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11
3
IRG4PSC71K
3.0
100
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current (A)
LIMITED BY PACKAGE
80
60
40
20
V GE = 15V
A
0
25
50
75
100
125
VGE = 15V
80 us PULSE WIDTH
IC = 120 A
2.0
IC = 60 A
IC = 30 A
1.0
-60 -40 -20
150
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Thermal Response (ZthJC)
1
D = 0.50
0.1
0.01
0.0001
0.20
PDM
0.10
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1 2
2. Peak TJ = PDMx Z thJC + TC
0.001
0.01
0.1
1
10
A
100
t 1, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSC71K
10000
VGE , Gate-to-Emitter Voltage (V)
8000
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
6000
4000
2000
0
Coes
16
12
8
4
Cres
1
10
0
100
VCE , Collector-to-Emitter Voltage (V)
100
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V
V GE = 15V
TJ = 25 ° C
10.0
I C = 60A
8.0
6.0
4.0
2.0
10
20
30
40
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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100
200
300
400
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
12.0
0
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.0
VCC = 400V
I C = 60A
50
RG = 5.0Ohm
Ω
VGE = 15V
VCC = 480V
IC = 120 A
10
IC = 60 A
IC = 30 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PSC71K
RG
TJ
VCC
VGE
1000
Ω
= 5.0Ohm
= 150 ° C
= 480V
= 15V
15
100
10
5
0
20
40
60
80
100
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
T J = 125 o C
I C , Collector Current (A)
Total Switching Losses (mJ)
20
120
10
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PSC71K
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X IC@25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
IC 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
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E off
E ts = (Eon +Eoff )
7
IRG4PSC71K
Super-247™ (TO-274AA) Package Outline
Dimensions are shown in millimeters
0.13 [.005]
16.10 [.632]
15.10 [.595]
2X R 3.00 [.118]
2.00 [.079]
5.50 [.216]
4.50 [.178]
A
0.25 [.010]
B A
13.90 [.547]
13.30 [.524]
2.15 [.084]
1.45 [.058]
1.30 [.051]
0.70 [.028]
4
20.80 [.818]
19.80 [.780]
16.10 [.633]
15.50 [.611]
4
C
1
2
3
B
14.80 [.582]
13.80 [.544]
5.45 [.215]
2X
Ø 1.60 [.063]
MAX.
4.25 [.167]
3.85 [.152]
3X
1.60 [.062]
1.45 [.058]
0.25 [.010]
B A
3X
1.30 [.051]
1.10 [.044]
2.35 [.092]
1.65 [.065]
S ECT ION E-E
NOTES :
1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994.
2. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]
3. CONT ROLLING DIMENS ION: MILLIMET ER
4. OUTLINE CONFORMS T O JEDEC OUTLINE T O-274AA
E
E
LEAD AS S IGNMENTS
IGBT
MOS FET
1 - GAT E
2 - DRAIN
3 - S OURCE
4 - DRAIN
1 - GAT E
2 - COLLECTOR
3 - EMITT ER
4 - COLLECTOR
Super-247™ (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
PART NUMBER
INTERNATIONAL RECTIFIER
LOGO
IRFPS37N50A
719C
17
89
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
TOP
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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8
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