PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free VCE(on) typ. = 3.12V G @ VGE = 15V, E ICE = 40A, Tj=25°C n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation. Super-247™ Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 1200 80 40 160 160 ± 20 595 238 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC RθCS RθJA Wt Le www.irf.com Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package) Min. Typ. Max. Units ––– ––– ––– 20 (2) ––– ––– ––– 0.24 ––– ––– 6.0 (0.21) 13 0.20 ––– 40 ––– ––– ––– °C/W N(kgf) g (oz) nH 1 03/15/05 IRGPS40B120UP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Temperature Coeff. of Breakdown Voltage ––– 0.40 Collector-to-Emitter Saturation Voltage ––– 3.12 ––– 3.39 ––– 3.88 ––– 4.24 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage ––– -12 Forward Transconductance ––– 30.5 Zero Gate Voltage Collector Current ––– ––– ––– 100 Gate-to-Emitter Leakage Current ––– ––– Ref.Fig. Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C) 5, 6 3.40 IC = 40A VGE = 15V 7, 9 3.71 V IC = 50A 10 4.39 IC = 40A, TJ = 125°C 4.79 IC = 50A, TJ = 125°C 11 8, 9 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 10 ,11 ––– S VCE = 50V, IC = 40A, PW=80µs 500 µA VGE = 0V, VCE = 1200V 1200 VGE = 0V, VCE = 1200V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operting Area SCSOA Short Circuit Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 340 43 165 1400 1650 3050 1950 2200 4150 76 39 332 25 4300 270 160 Max. Units Conditions 510 IC = 40A 65 nC VCC = 600V 248 VGE = 15V 1750 µJ IC = 40A, VCC = 600V 2050 VGE = 15V,RG = 4.7Ω, L =200µH 3800 Ls = 150nH TJ = 25°C 2300 TJ = 125°C 2950 µJ Energy losses include "tail" and 5250 diode reverse recovery. 99 IC = 40A, VCC = 600V 55 VGE = 15V, RG = 4.7Ω L =200µH 365 ns Ls = 150nH, T J = 125°C 33 ––– VGE = 0V ––– pF VCC = 30V ––– f = 1.0MHz TJ = 150°C, IC = 160A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7Ω TJ = 150°C, Vp =1200V 10 ––– ––– µs VCC = 900V, VGE = +15V to 0V, RG = 4.7Ω Note: VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 4.7Ω. 2 www.irf.com Ref.Fig. 17 CT1 CT4 WF1 WF2 12,14 13, 15 CT4 WF1 WF2 16 4 CT3 WF4 IRGPS40B120UP 100 700 600 80 500 IC (A) Ptot (W) 60 40 400 300 200 20 100 0 0 0 20 40 60 80 100 120 140 160 0 50 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 150 200 Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 2 µs 100 100 10 100 µs 1ms 1 IC A) 10 µs IC (A) 100 T C (°C) 10 10ms DC 0.1 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C www.irf.com 10000 1 10 100 1000 10000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 3 IRGPS40B120UP 120 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 60 50 ICE (A) ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 60 40 30 40 20 20 10 0 0 0 1 2 3 4 5 0 2 VCE (V) 6 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 500 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 450 T J = 25°C 400 T J = 125°C 350 ICE (A) 60 ICE (A) 4 40 300 250 200 150 20 TJ = 125°C 100 T J = 25°C 50 0 0 0 2 4 6 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs 4 0 5 10 15 20 VGE (V) Fig. 8 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com IRGPS40B120UP 20 20 18 18 16 16 14 12 ICE = 20A 10 ICE = 40A 8 ICE = 80A VCE (V) VCE (V) 14 ICE = 20A 12 ICE = 40A 10 ICE = 80A 8 6 4 6 2 4 0 2 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 18 16 VCE (V) 14 ICE = 20A ICE = 40A ICE = 80A 12 10 8 6 4 2 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 125°C www.irf.com 5 IRGPS40B120UP 4500 1000 4000 tdOFF 3500 Energy (µJ) Swiching Time (ns) EON EOFF 3000 2500 2000 1500 tdON 100 tR 1000 tF 500 0 0 20 40 60 10 80 20 IC (A) 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V 5000 1000 4500 tdOFF 4000 EOFF Swiching Time (ns) 3500 Energy (µJ) 40 3000 EON 2500 2000 1500 td ON 100 tR tF 1000 500 0 10 0 5 10 15 20 RG (Ω) Fig. 14 - Typ. Energy Loss vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 40A; VGE= 15V 6 25 0 5 10 15 20 25 RG (Ω) Fig. 15 - Typ. Switching Time vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 40A; VGE= 15V www.irf.com IRGPS40B120UP 16 10000 Cies 14 600V 1000 800V 10 VGE (V) Capacitance (pF) 12 Coes Cres 8 6 100 4 2 0 10 0 20 40 60 80 100 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) VCE (V) Fig. 17 - Typical Gate Charge vs. VGE ICE = 40A; L = 600µH Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 18. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7 IRGPS40B120UP L L 80 V VCC DUT DUT 0 1000V Rg 1K Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-on) DRIVER L DIODE CLAMP 900V DC DUT / DRIVER DUT VCC Rg Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= DUT VCC ICM VCC Rg Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com IRGPS40B120UP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 50 1100 1000 40 900 900 90 800 80 700 70 800 500 tf 500 400 20 VCE (V) 600 5% V CE 10 300 400 300 30 5% V CE 100 20 10 0 0 40 90% test current 200 0 100 50 10% test current 5% ICE 200 -100 -0.20 60 TEST CURRENT I CE (A) VCE (V) 600 30 ICE (A) 90% ICE 700 0 Eoff Loss 0.00 0.20 0.40 -100 4.10 -10 0.80 0.60 4.20 Time(µs) 4.30 4.40 4.50 -10 4.60 Time (µs) Fig. WF.3 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 500 1000 450 900 VCE 400 800 ICE 350 600 300 500 250 400 200 300 150 200 100 100 50 0 -5.00 0.00 5.00 10.00 ICE (A) V CE (V) 700 0 15.00 time (µS) www.irf.com 9 IRGPS40B120UP Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/05 10 www.irf.com