SUM55P06-19L Vishay Siliconix P-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 VDS (V) - 60 Qg (Typ.) • TrenchFET® Power MOSFET Available RoHS* 76 COMPLIANT S TO-263 G G D S Top View D Ordering Information: SUM55P06-19L SUM55P06-19L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currentd (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Pulse Avalanche Energy Power Dissipation TC = 25 °C TA = 25 °Cb Operating Junction and Storage Temperature Range ID V - 55 - 31 IDM - 150 IAS - 45 EAS 101 PD Unit 125c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1.2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountb Junction-to-Case °C/W Notes: a. Duty cycle ≤ 1%. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 73059 S-80272-Rev. C, 11-Feb-08 www.vishay.com 1 SUM55P06-19L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250 ID(on) VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) Forward Transconductance 0.033 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.041 VDS = - 15 V, ID = - 50 A nA µA 0.019 VGS = - 10 V, ID = - 30 A, TJ = 125 °C gfs V A 0.015 VGS = - 4.5 V, ID = - 20 A a -3 0.020 Ω 0.025 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Qgs Gate-Drain Charge Qgd Gate Resistance Rg c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 76 115 VDS = - 30 V, VGS = - 10 V, ID = - 55 A 16 f = 1.0 MHz 5.2 12 20 VDD = - 30 V, RL = 0.54 Ω ID ≅ - 55 A, VGEN = - 10 V, Rg = 2.5 Ω 15 25 80 120 230 350 nC 19 td(on) c pF 390 290 Qg c Turn-On Delay Time 3500 VGS = 0 V, VDS = - 25 V, f = 1 MHz tf Source-Drain Diode Ratings and Characteristics TC = 25 Ω °Cb IS - 110 Pulsed Current ISM - 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 50 A, VGS = 0 V trr IRM(REC) Qrr ns IF = - 50 A, di/dt = 100 A/µs A - 1.0 - 1.5 V 45 68 ns - 2.6 4.0 A 0.059 0.136 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73059 S-80272-Rev. C, 11-Feb-08 SUM55P06-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 200 TC = - 55 °C VGS = 10 thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 25 °C 160 5V 120 4V 80 40 125 °C 120 80 40 2V 3V 0 0 0 3 6 9 12 15 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.05 80 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 25 °C 60 125 °C 40 20 0 0.04 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0.00 0 6 12 18 24 30 36 42 48 54 60 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 5000 20 VGS - Gate-to-Source Voltage (V) 4500 4000 C - Capacitance (pF) Ciss 3500 3000 2500 2000 1500 Coss 1000 Crss VDS = 30 V ID = 55 A 16 12 8 4 500 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 73059 S-80272-Rev. C, 11-Feb-08 50 60 0 20 40 60 80 100 120 140 160 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM55P06-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.2 I S - Source Current (A) 1.6 (Normalized) rDS(on) - On-Resistance 1.9 VGS = 10 V ID = 30 A 1.3 1.0 TJ = 150 °C TJ = 25 °C 10 0.7 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0.0 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 75 ID = 10 mA 72 V(BR)DSS (V) I Dav (A) 100 10 IAV (A) at TA = 25 °C 1 69 66 63 IAV (A) at TA = 150 °C 0.1 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 73059 S-80272-Rev. C, 11-Feb-08 SUM55P06-19L Vishay Siliconix THERMAL RATINGS 1000 60 Limited by r DS(on)* 50 I D - Drain Current (A) I D - Drain Current (A) 10 µs 40 30 20 100 100 µs 10 1 TC = 25 °C Single Pulse 10 0 1 ms 10 ms 100 ms, DC 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73059. Document Number: 73059 S-80272-Rev. C, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1