To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS70KMJ-06F HIGH-SPEED SWITCHING USE FS70KMJ-06F OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀➁➂ ¡4V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) ............................................................. 7.0mΩ ¡ID ......................................................................................... 70A ¡Integrated Fast Recovery Diode (TYP.) ............. 70ns 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID IDM IDA IS Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current VDS = 0V ISM PD Tch Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature ±20 70 280 70 70 280 V A A A A A 30 –55 ~ +150 –55 ~ +150 W °C °C 2000 2.0 V g Tstg Viso — Parameter Isolation voltage Weight Conditions L = 10µH AC for 1 minute, Terminal to case Typical value Mar. 2002 MITSUBISHI Nch POWER MOSFET FS70KMJ-06F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage V (BR) GSS IDSS Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current IGSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time tf VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Test conditions Limits Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VDS = 60V, VGS = 0V 60 ±20 — — — — — — 100 V V µA VGS = ±20V, VDS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 10V — 1.0 — — — 1.5 5.5 6.6 ±10 2.0 7.0 8.3 µA V mΩ mΩ — — — — 0.19 110 8500 1300 0.25 — — — V S pF pF — — — — 720 42 130 800 — — — — pF ns ns ns — 330 — ns — — — 1.0 — 70 1.5 4.17 — V °C/W ns ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/µs Mar. 2002