Si4484EY Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)a TA = 25_C TA = 85_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode L = 0.1 0 1 mH Conduction)a TA = 85_C Operating Junction and Storage Temperature Range 4.8 5.4 3.7 30 IAR 25 EAR 31 PD V 6.9 IDM IS TA = 25_C Maximum Power Dissipationa ID A mJ 3.1 1.5 3.8 1.8 2.3 1.1 TJ, Tstg Unit A W _C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 33 40 70 85 17 21 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71189 S-03951—Rev. C, 26-May-03 www.vishay.com 1 Si4484EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 85_C 20 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea V nA mA 30 A VGS = 10 V, ID = 6.9 A 0.028 0.034 VGS = 6.0 V, ID = 6.4 A 0.032 0.040 gfs VDS = 15 V, ID = 6.9 A 25 VSD IS = 3.1 A, VGS = 0 V 0.8 1.2 24 30 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 50 V, VGS = 10 V, ID = 6.9 A 7.6 nC 5.4 0.5 1.25 2.2 td(on) 16 30 tr 10 20 35 70 20 40 50 80 VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3.1 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 6 V 5V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 18 12 TC = 150_C 6 25_C - 55_C 4V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71189 S-03951—Rev. C, 26-May-03 Si4484EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2500 0.04 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.05 VGS = 6.0 V 0.03 VGS = 10 V 0.02 2000 Ciss 1500 1000 Crss 500 0.01 Coss 0.00 0 0 6 12 18 24 30 0 10 ID - Drain Current (A) Gate Charge 40 50 60 On-Resistance vs. Junction Temperature 2.4 VDS = 50 V ID = 6.9 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 30 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 6.9 A 2.0 1.6 1.2 0.8 0 0 5 10 15 20 0.4 - 50 25 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on) - On-Resistance ( W ) 30 I S - Source Current (A) 20 TJ = 175_C 10 TJ = 25_C 0.05 ID = 6.9 A 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71189 S-03951—Rev. C, 26-May-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4484EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.5 50 40 ID = 250 mA Power (W) V GS(th) Variance (V) 0.0 - 0.5 30 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 0 0.01 0.1 1 TJ - Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71189 S-03951—Rev. C, 26-May-03