Si4973DY New Product Vishay Siliconix Dual P-Channel 25-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.023 @ VGS = - 10 V - 7.6 0.029 @ VGS = - 6 V - 6.8 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation APPLICATIONS - 30 D Notebook - Load Switch - Battery Charger Switch S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4973DY Si4973DY-T1 (with Tape and Reel) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS "25 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 7.6 - 5.8 - 6.1 - 4.6 ID TA = 70_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A - 30 - 1.7 - 0.9 2.0 1.1 1.3 0.7 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 85 110 26 35 Unit _C/W C/W Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72164 S-03599—Rev. A, 31-Mar-03 www.vishay.com 1 Si4973DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA -1 Typ Max Unit -3 V Static Gate Threshold Voltage Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "25 V "200 VDS = - 24 V, VGS = 0 V -1 VDS = - 24 V, VGS = 0 V, TJ = 55_C - 25 VDS = - 5 V, VGS = - 10 V mA - 30 A VGS = - 10 V, ID = - 7.6 A 0.018 0.023 VGS = - 6 V, ID = - 6.8 A 0.023 0.029 gfs VDS = - 10 V, ID = - 7.6 A 22 VSD IS = - 1.7 A, VGS = 0 V - 0.8 - 1.2 37 56 Forward Transconductancea Diode Forward "100 nA rDS(on) DS( ) Voltagea VDS = 0 V, VGS = "20 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 11 Turn-On Delay Time td(on) 10 tr 15 25 115 180 90 140 80 120 Rise Time Turn-Off Delay Time VDS = - 15 V, VGS = - 10 V, ID = - 7.6 A VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 6 IF = - 1.7 A, di/dt = 100 A/ms nC 15 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 24 24 I D - Drain Current (A) I D - Drain Current (A) 4V 18 12 18 12 TC = 125_C 6 6 25_C 3V - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72164 S-03599—Rev. A, 31-Mar-03 Si4973DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2500 0.035 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.040 0.030 VGS = 4.5 V 0.025 0.020 VGS = 10 V 0.015 2000 Ciss 1500 1000 0.010 Coss 500 0.005 Crss 0.000 0 0 6 12 18 24 30 0 5 10 ID - Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 7.6 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 7.6 A 1.4 1.2 1.0 0.8 0 0 10 20 30 0.6 - 50 40 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 30 I S - Source Current (A) 15 0.08 0.06 ID = 7.6 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72164 S-03599—Rev. A, 31-Mar-03 1.2 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4973DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 50 0.4 40 30 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.2 ID = 250 mA 0.0 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area, Junction-to-Ambient 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse P(t) = 1 P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72164 S-03599—Rev. A, 31-Mar-03 Si4973DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72164 S-03599—Rev. A, 31-Mar-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5