Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D 8 D 7 S2 *300 W *300 W G1 G2 6 S2 5 G2 Top View S1 Ordering Information: N-Channel Si6968BEDQ-T1 (with Tape and Reel) N-Channel S2 *Typical value by design ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current 6.5 ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 5.2 5.5 IDM 3.5 A 30 1.5 1.0 1.5 1.0 0.96 0.64 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJF Typ Max 72 83 100 120 55 70 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72274 S-31362—Rev. A, 30-Jun-03 www.vishay.com 1 Si6968BEDQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 0.6 Typa Max Unit Static VGS(th) VDS = VGS, ID = 250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb V nA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 70_C 25 VDS v 5 V, VGS = 4.5 V rDS(on) DS( ) 1.6 "200 mA 30 A VGS = 4.5 V, ID = 6.5 A 0.0165 0.022 VGS = 2.5 V, ID = 5.5 A 0.023 0.030 gfs VDS = 10 V, ID = 6.5 A 30 VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 12 18 W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.6 Turn-On Delay Time td(on) 245 Rise Time VDS = 10 V, VGS = 4.5 V, ID = 6.5 A tr Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time 2.2 tf nC 365 330 495 860 1300 510 765 ns Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10,000 1,000 8 I GSS - Gate Current (mA) I GSS - Gate Current (mA) 10 6 4 2 10 TJ = 150_C 1 TJ = 25_C 0.1 0 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 100 18 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Document Number: 72274 S-31362—Rev. A, 30-Jun-03 Si6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 3 V 2.5 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 2V 5 20 15 10 TC = 125_C 5 25_C - 55_C 0 0 1 2 3 4 0 0.0 5 VDS - Drain-to-Source Voltage (V) 0.5 1.0 On-Resistance vs. Drain Current 2.5 3.0 Gate Charge 5 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) 2.0 VGS - Gate-to-Source Voltage (V) 0.06 0.05 0.04 0.03 VGS = 2.5 V VGS = 4.5 V 0.02 VDS = 10 V ID = 6.5 A 4 3 2 1 0 0.01 0 5 10 15 20 25 0 30 3 ID - Drain Current (A) On-Resistance vs. Junction Temperature 1.4 6 9 12 15 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 1.6 40 VGS = 4.5 V ID = 6.5 A 10 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 1.5 1.2 1.0 0.8 0.6 - 50 TJ = 150_C TJ = 25_C 1 0.1 - 25 0 25 50 75 100 TJ - Junction Temperature (_C) Document Number: 72274 S-31362—Rev. A, 30-Jun-03 125 150 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 Si6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.05 0.4 0.04 0.2 0.03 V GS(th) Variance (V) r DS(on) - On-Resistance ( W ) ID = 250 mA ID = 6.5 A 0.02 - 0.0 - 0.2 - 0.4 0.01 - 0.6 - 50 0.00 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (_C) Single Pulse Power Safe Operating Area, Junction-to-Case 100 200 Limited by rDS(on) I D - Drain Current (A) Power (W) 160 120 80 40 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s TC = 25_C Single Pulse dc 0.01 0 0.001 0.01 0.1 1 10 0.1 Time (sec) 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72274 S-31362—Rev. A, 30-Jun-03 Si6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72274 S-31362—Rev. A, 30-Jun-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5