Si7655DN Datasheet

New Product
Si7655DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) () Max.
ID (A)
0.0036 at VGS = - 10 V
- 40e
0.0048 at VGS = - 4.5 V
- 40e
0.0085 at VGS = - 2.5 V
- 40e
Qg (Typ.)
72 nC
PowerPAK 1212-8S
APPLICATIONS
3.3 mm
S
1
3.3 mm
S
2
S
3
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.75 mm
Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
0.75 mm
G
• Smart Phones, Tablet PCs, Mobile
Computing
- Battery Switch
- Load Switch
S
4
G
D
8
D
7
D
6
D
5
Bottom View
D
Ordering Information:
Si7655DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
TC = 70 °C
TA = 25 °C
ID
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Avalanche Current
L = 0.1 mH
Single-Pulse Avalanche Energy
IS
TC = 70 °C
TA = 25 °C
- 100
A
- 40e
- 4a, b
IAS
- 20
20
mJ
57
PD
36
4.8a, b
W
3a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
- 31a, b
EAS
TC = 25 °C
Maximum Power Dissipation
- 40e
- 25a, b
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
V
- 40e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
c, d
Soldering Recommendations (Peak Temperature)
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
t 10 s
Steady State
Typical
21
1.7
Maximum
26
2.2
Unit
°C/W
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Symbol
Test Conditions
Min.
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
- 20
Zero Gate Voltage Drain Current
IDSS
On-State Drain
Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Ciss
Coss
Crss
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
IS
TC = 25 °C
ISM
VSD
trr
Qrr
ta
tb
f = 1 MHz
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
IF = - 10 A
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
mV/
°C
- 1.1
± 100
-1
- 10
- 20
0.5
V
nA
µA
A
0.0030
0.0039
0.0062
90
VDS = - 10 V, VGS = - 10 V, ID = - 20 A
Unit
V
- 0.5
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Max.
- 12
2.6
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS  - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 20 A
VGS = - 4.5 V, ID = - 15 A
VGS = - 2.5 V, ID = - 10 A
VDS = - 15 V, ID = - 20 A
Typ.
6600
890
930
150
72
12
19
2.6
45
45
100
35
13
10
110
25
- 0.75
30
17
15
15
0.0036
0.0048
0.0085

S
pF
225
110
5.2
90
90
200
70
25
20
220
50
- 40c
- 100
- 1.2
60
26
nC

ns
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
VGS = 10 V thru 3 V
16
ID - Drain Current (A)
ID - Drain Current (A)
80
60
VGS = 2 V
40
20
12
TC = 25 °C
8
TC = 125 °C
4
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
9000
0.020
7500
0.016
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2.5
VGS = 2.5 V
0.012
0.008
6000
4500
3000
VGS = 4.5 V
Coss
0.004
1500
Crss
VGS = 10 V
0.000
0
0
20
40
60
80
100
ID - Drain Current (A)
0
8
12
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.4
10
RDS(on) - On-Resistance (Normalized)
VDS = 10 V
8
6
VDS = 5 V
VDS = 16 V
4
2
0
0
30
VGS = 10 V
ID = 20 A
ID = 20 A
VGS - Gate-to-Source Voltage (V)
4
60
90
120
150
1.3
VGS = 4.5 V
1.2
VGS = 2.5 V
1.1
1.0
0.9
0.8
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact: [email protected]
150
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
ID = 20 A
0.016
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.012
0.008
TJ = 125 °C
0.004
TJ = 25 °C
0.1
0.000
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
0.9
0.8
80
Power (W)
VGS(th) (V)
0.7
0.6
ID = 250 μA
60
40
0.5
20
0.4
0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
1
Time (s)
10
100
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 us
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
120
60
50
80
Power (W)
ID - Drain Current (A)
100
60
Package Limited
40
30
40
20
20
10
0
0
0
25
TC - Case Temperature (°C)
50
75
100
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
50
75
100
125
0
150
25
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 63 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63617.
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For technical questions, contact: [email protected]
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
D
z
8
7
6
5
1
2
3
4
D1
5
6
7
8
2
1
L
K
E
E1
K1
d 0.10 C
2X
d 0.10 C
2X
3
0.10 C
C
A3
A
f
e
b
4
0.08 C
A1
d
DIM.
MILLIMETERS
MIN.
NOM.
A
0.67
A1
0
INCHES
MAX.
MIN.
NOM.
MAX.
0.75
0.83
0.027
0.030
0.033
-
0.05
0
-
0.002
A3
0.20 REF
0.008 REF
b
0.30 BSC
0.012 BSC
3.30 BSC
D
D1
2.15
0.130 BSC
2.35
0.084
1.80
0.063
3.30 BSC
E
E1
2.25
1.60
1.70
0.088
0.092
0.130 BSC
0.067
0.071
e
0.65 BSC
0.026 BSC
K
0.76 TYP
0.030 TYP
K1
0.41 TYP
0.016 TYP
L
0.43 BSC
0.017 BSC
z
0.525 TYP
0.021 TYP
ECN: C12-0200-Rev. A, 12-Mar-12
DWG: 6008
Note
• Millimeters will govern.
Revision: 12-Mar-12
1
Document Number: 63919
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000