PROFET® BTS409L1
Smart High-Side Power Switch
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC Qualified
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
43
V
5.0 ... 34 V
200 m
2.3
A
4
A
PG-TO263-5-2
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
Voltage
sensor
2
IN
ESD
4
Limit for
unclampe
d loads
ind.
Charge
pump
Level
shifter
Rectifier
OUT
Temperature
sensor
5
Open load
Short to Vbb
detection
Logic
Load
R
ST
PROFET
GND
O
GND
1
Signal GND
1)
Load GND
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet
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BTS409L1
Pin
Symbol
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Data Sheet
Function
2
2013-10-10
BTS409L1
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection
Tj Start=-40 ...+150°C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 2.3 A, ZL = 98 mH, 0 :
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
Symbol
Vbb
Vbb
VLoad dump4)
IL
Tj
Tstg
Ptot
EAS
VESD
Values
43
34
Unit
V
V
60
V
self-limited
-40 ...+150
-55 ...+150
18
A
°C
335
1.0
2.0
mJ
kV
-10 ... +16
2.0
5.0
V
mA
Values
typ
max
-7
-75
39
Unit
W
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 7
Thermal Characteristics
Parameter and Conditions
Thermal resistance
2)
3)
4)
5)
Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB5):
min
---
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
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BTS409L1
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.8 A
Tj=25 °C: RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 , Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C:
Tj =-40...+150°C:
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection7)
Tj =-40...+150°C:
Ibb=40 mA
Standby current (pin 3)
VIN=0
Tj=-40...+25°C:
Tj= 150°C:
6)
7)
IL(ISO)
IL(GNDhigh)
--
160
200
400
1.8
320
2.3
m
--
--
-10
ton
toff
80
80
200
200
400
400
s
dV /dton
0.1
--
1
V/s
-dV/dtoff
0.1
--
1
V/s
Vbb(on)
Vbb(under)
Vbb(u rst)
5.0
3.5
--
----
V
V
V
Vbb(ucp)
--
5.6
34
5.0
5.0
7.0
7.0
Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
Vbb(over)
Vbb(AZ)
34
33
-42
--0.5
47
43
----
V
V
V
V
---
10
12
23
28
A
Ibb(off)
A
mA
V
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 8.
Data Sheet
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BTS409L1
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 10)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10)
Diagnostic Characteristics
Open load detection current
(on-condition)
Values
min
typ
max
Unit
IL(off)
--
--
12
A
IGND
--
1.8
3.5
mA
5.5
4.5
3
9.5
7.5
5
13
11
7
A
--
4
--
A
41
150
---
47
-10
--
53
--32
V
°C
K
V
10
10
---
200
150
mA
2
3
4
V
4
10
30
k
IL(SCp)
IL(SCr)
VON(CL)
Tjt
Tjt
-Vbb
Tj=-40 °C: IL (OL)
Tj=25 ..150°C:
Open load detection voltage11) (off-condition)
VOUT(OL)
Tj=-40..150°C:
Internal output pull down
(pin 5 to 1), VOUT=5 V, Tj=-40..150°C
RO
8)
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
11) External pull up resistor required for open load detection in off state.
9)
Data Sheet
5
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BTS409L1
Parameter and Conditions
Symbol
Values
min
typ
max
RI
2.5
3.5
6
k
VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
1.7
1.5
-1
--0.5
--
3.5
--50
V
V
V
A
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
20
50
90
A
Delay time for status with open load after switch
off
(see timing diagrams, page 11), Tj =-40..+150°C
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA:
Tj = +150°C, IST = +1.6 mA:
td(ST OL4)
100
400
800
s
--
250
600
s
5.4
---
6.1
---
-0.4
0.6
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback12)
Input resistance
see circuit page 7
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
12)
td(ST)
VST(high)
VST(low)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
Data Sheet
6
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BTS409L1
Truth Table
Input-
Output
level
level
L
H
L
H
L
H
L
H
Normal
operation
Open load
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
H
H
H (L14))
L
L15)
H (L16))
H
L
H
H
H
H
13)
H
H
H
L
H
L
H
L
H
L = "Low" Level
H = "High" Level
Status
L
L
L
L
L
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Status output
+5V
Ibb
3
I IN
2
IL
V
IN
VST
OUT
PROFET
I ST
V
R ST(ON)
Vbb
IN
4
5
ST
GND
GND
1
bb
R
IGND
ST
VON
ESDZD
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
VOUT
GND
Input circuit (ESD protection)
Inductive and overvoltage output clamp
R
IN
I
+ V bb
V
ESD-ZD I
I
Z
I
V
ON
GND
OUT
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
GND
PROFET
VON clamped to 47 V typ.
13)
Power Transistor off, high impedance
with external resistor between pin 3 and pin 5
15) An external short of output to V , in the off state, causes an internal current from output to ground. If R
bb
GND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to V may be detected in ON-state by the no-load-detection
bb
14)
Data Sheet
7
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BTS409L1
GND disconnect
Overvolt. and reverse batt. protection
3
+ Vbb
V
R IN
IN
RI
Z2
2
IN
Vbb
PROFET
OUT
Logic
4
R ST ST
V
V
PROFET
Z1
bb
V
IN
V
5
ST
GND
1
ST
V
GND
GND
R GND
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .
Signal GND
Due to VGND >0, no VST = low signal available.
VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 ,
RST= 15 k, RI= 3.5 k typ.
GND disconnect with GND pull up
Open-load detection
3
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
2
IN
Vbb
PROFET
+ V bb
4
OUT
5
ST
GND
1
VON
ON
V
OUT
Logic
unit
V
bb
V
IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open load
detection
Vbb disconnect with energized inductive
load
3
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
high
2
IN
Vbb
PROFET
R
EXT
4
OFF
5
ST
GND
1
V
OUT
V
Logic
unit
OUT
Open load
detection
R
O
bb
Normal load current can be handled by the PROFET
itself.
Signal GND
Data Sheet
8
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BTS409L1
Vbb disconnect with charged external
inductive load
high
2
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0
S
3
IN
Vbb
L [mH]
10000
PROFET
4
Maximum allowable load inductance for
a single switch off
OUT
5
D
ST
GND
1000
1
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
100
Inductive Load switch-off energy
dissipation
E bb
10
E AS
IN
PROFET
=
ELoad
Vbb
1
OUT
1
ST
2
3
4
5
EL
GND
ZL
{
IL [A]
L
RL
ER
Transient thermal impedance chip case
ZthJC = f(tp)ZthJC [K/W]
10
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
1
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL 0 :
EAS=
IL· L
IL·RL
·(V + |VOUT(CL)|)· ln (1+
)
2·RL bb
|VOUT(CL)|
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
1E2
tp [s]
Data Sheet
9
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BTS409L1
Timing diagrams
Figure 1a: Vbb turn on:
Figure 2b: Switching an inductive load
IN
IN
V
bb
t
ST
d(ST)
*)
V
OUT
V
OUT
ST open drain
IL
I L(OL)
t
t
proper turn on under all conditions
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
IN
ST
IL
V
I L(SCp)
IL(SCr)
OUT
I
L
t
ST
t
Heating up may require several milliseconds, depending on
external conditions
Data Sheet
10
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BTS409L1
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
IN
t
d(ST OL1)
ST
ST
V
V
t
d(ST OL2)
OUT
OUT
T
I
J
normal
open
normal
L
t
t
td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 5c: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
IN
ST
IN
t
d(ST)
t
d(ST OL4)
ST
V
t
d(ST)
V
OUT
OUT
I
I
L
L
open
t
open
t
The status delay time td(ST OL4) allows to ditinguish between
the failure modes "open load" and "overtemperature".
Data Sheet
11
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BTS409L1
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V
V bb
bb
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
V
V
bb(under)
bb(u rst)
V
OUT
V OUT
ST
ST open drain
t
t
Figure 6b: Undervoltage restart of charge pump
VON(CL)
V
V
V
bb(u rst)
off-state
off-state
on-state
V on
bb(over)
bb(o rst)
V
bb(u cp)
V
bb(under)
V bb
charge pump starts at Vbb(ucp) =5.6 V typ.
Data Sheet
12
2013-10-10
BTS409L1
Published by
Infineon Technologies AG,
Bereichs Kommunikation
D-81726 München
© Infineon Technologies AG 2013
All Rights Reserved.
Package and Ordering Code
All dimensions in mm
PG-TO263-5-2
BTS409L1 E3062A
Ordering code
SP001104814
Attention please!
The information herein is given to describe certain
components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
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manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our
Infineon Technologies Representatives worldwide (see
address list).
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Due to technical requirements components may
contain dangerous substances. For information on the
types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used
in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to
cause the failure of that life-support device or system,
or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended
to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of
the user or other persons may be endangered.
Data Sheet
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2013-10-10