NTR5105P Power MOSFET −60 V, −211 mA, Single P−Channel SOT−23 Package Features • Trench Technology • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX 5 W @ −10 V Applications • Small Signal Load Switch • Analog Switch −60 V Parameter Drain−to−Source Voltage Gate−to−Source Voltage Power Dissipation (Note 1) P−Channel Symbol Value Unit VDSS −60 V VGS ±20 V ID −196 mA Steady State TA = 25°C TA = 85°C −141 t≤5s TA = 25°C −211 TA = 85°C −152 Steady State TA = 25°C PD t≤5s Pulsed Drain Current −211 mA 6 W @ −4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Continuous Drain Current (Note 1) ID MAX tp = 10 ms mW 347 403 3 MARKING DIAGRAM/ PIN ASSIGNMENT Drain 3 1 −784 A TJ, Tstg −55 to 150 °C Source Current (Body Diode) (Note 2) IS −347 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter G S IDM Operating Junction and Storage Temperature D Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 360 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 310 °C/W 1. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu area − 1.127 in. sq. [2 oz.] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu pad. 2 T05 MG G SOT−23 CASE 318 STYLE 21 T05 M G 1 Gate 2 Source = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NTR5105PT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 0 1 Publication Order Number: NTR5105P/D NTR5105P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = −250 mA Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = −60 V V 6.5 mV/°C TJ = 25°C −1.0 TJ = 125°C −10 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = −250 mA mA "100 nA −3.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS −1.0 4.2 mV/°C W VGS = −10 V, ID = −100 mA 1.6 5.0 VGS = −4.5 V, ID = −100 mA 2.2 6.0 VDS = −5.0 V, ID = −100 mA 227 mS 30.3 pF CHARGES, CAPACITANCES & GATE RESISTANCE Ciss Input Capacitance VGS = 0 V, f = 1.0 MHz, VDS = −25 V Output Capacitance Coss Reverse Transfer Capacitance Crss 3.2 Total Gate Charge QG(TOT) 1.0 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = −5 V, VDS = −25 V, ID = −100 mA 4.7 nC 0.2 0.4 0.3 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 5.8 VGS = −5 V, VDD = −48 V, ID = −100 mA, RG = 1 W tf 4.0 8.8 12.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −100 mA TJ = 25°C 0.78 TJ = 125°C 0.59 1.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTR5105P TYPICAL CHARACTERISTICS 1.0 −ID, DRAIN CURRENT (A) TJ = 25°C 0.8 0.7 −4.0 V 0.6 0.5 −3.5 V 0.4 0.3 −3.0 V 0.2 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 125°C 0.8 TJ = 25°C 0.7 0.6 0.5 0.4 VDS = −10 V 0.3 0.2 −2.5 V 0.1 0 1 2 3 4 5 1 3 4 5 6 7 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 7 TJ = 25°C 6 ID = −100 mA 5 4 3 2 1 0 2 2 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3 4 5 6 7 8 9 10 8 5 TJ = 25°C 4 VGS = −4.5 V 3 2 VGS = −10 V 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1000 VGS = −10 V ID = −100 mA TJ = 150°C −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = −55°C 0.9 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 1.0 −4.5 V VGS = −5 V to −10 V 0.9 1.5 VGS = −4.5 V 1.0 100 TJ = 125°C 10 1 TJ = 85°C 0.5 −50 0.1 −25 0 25 50 75 100 125 150 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTR5105P −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 40 C, CAPACITANCE (pF) CISS 30 20 VGS = 0 V TJ = 25°C f = 1 MHz COSS 10 CRSS 0 0 10 20 30 40 50 60 QT 9 8 7 6 5 4 QGS 3 QGD VDS = −25 V ID = −100 mA TJ = 25°C 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 10 VGS ≤ −30 V Single Pulse TC = 25°C VGS = 0 V −ID, DRAIN CURRENT (A) −IS, SOURCE CURRENT (A) 10 1 TJ = 85°C TJ = 25°C 0.1 1 100 ms 1 ms 0.1 10 ms 0.01 RDS(on) Limit Thermal Limit Package Limit dc 0.001 0.6 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1 10 100 1000 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 1000 RqJA(t) (°C/W) 50% Duty Cycle 100 20% 10% 5% 10 2% 1% 1 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 11. Thermal Response http://onsemi.com 4 1 10 100 1000 NTR5105P PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR5105P/D