NTD4970N D

NTD4970N
Power MOSFET
30 V, 36 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
11 mW @ 10 V
30 V
Applications
36 A
• CPU Power Delivery
• DC−DC Converters
21 mW @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
11.6
A
TA = 100°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.55
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
8.5
Power Dissipation
RqJA (Note 2)
Steady
State
Continuous Drain
Current RqJC
(Note 1)
Pulsed Drain
Current
TA = 100°C
tp=10ms
Current Limited by Package
W
PD
1.38
W
TC = 25°C
ID
36
A
25
TC = 25°C
PD
24.6
W
TA = 25°C
IDM
130
A
TA = 25°C
IDmaxPkg
38
A
TJ,
TSTG
−55 to
+175
°C
Source Current (Body Diode)
IS
22
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 15 Apk, L = 0.1 mH, RG = 25 W)
EAS
11
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
4
A
TA = 25°C
Operating Junction and Storage
Temperature
4
4
6.0
TC = 100°C
Power Dissipation
RqJC (Note 1)
S
N−CHANNEL MOSFET
8.2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
1 2
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
AYWW
49
70NG
TA = 25°C
AYWW
49
70NG
Continuous Drain
Current RqJA
(Note 1)
G
AYWW
49
70NG
Parameter
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
Y
WW
4970N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
1
Publication Order Number:
NTD4970N/D
NTD4970N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
6.1
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
4.3
Junction−to−Ambient – Steady State (Note 3)
RqJA
58.9
Junction−to−Ambient – Steady State (Note 4)
RqJA
108.9
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
17
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
gFS
1.9
4.5
VGS = 4.5 V
Forward Transconductance
1.5
ID = 30 A
8.3
ID = 15 A
8.2
ID = 30 A
14.6
ID = 15 A
13.2
VDS = 1.5 V, ID = 30 A
34
mV/°C
11
21
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
161
Total Gate Charge
QG(TOT)
8.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
774
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
306
pF
1.5
VGS = 4.5 V, VDS = 15 V, ID = 30 A
3.0
nC
4.0
VGS = 10 V, VDS = 15 V, ID = 30 A
15.8
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
27.6
12.5
ns
5.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
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2
NTD4970N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
td(ON)
tr
Turn−Off Delay Time
Fall Time
td(OFF)
6.3
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
19.5
ns
16.2
3.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.97
TJ = 125°C
0.88
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
19.6
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
10.2
ns
9.4
QRR
7.0
nC
Source Inductance (Note 7)
LS
2.85
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 7)
LD
Gate Inductance (Note 7)
LG
4.9
Gate Resistance
RG
0.8
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
2.2
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Package
Shipping†
NTD4970NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4970N−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4970N−35G
IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD4970N
TYPICAL PERFORMANCE CURVES
50
50
10 V thru 4.5 V
VGS = 3.9 V
VDS = 10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
3.6 V
TJ = 25°C
30
3.3 V
20
3.0 V
10
40
30
20
TJ = 25°C
10
TJ = 125°C
2.7 V
1
2
3
4
0
5
4
ID = 30 A
TJ = 25°C
13
12
11
10
9
8
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
21
20 TJ = 25°C
19
18
17
16
15
14
13
12
11
10
9
8
7
10
15
VGS = 4.5 V
VGS = 10 V
20
25
30
35
40
45
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
10000
1.7 ID = 30 A
VGS = 10 V
1.6
1.5
1.4
1.3
IDSS, LEAKAGE (nA)
TJ = 150°C
1.2
1.1
1.0
0.9
1000
TJ = 125°C
100
TJ = 85°C
0.8
0.7
0.6
−50
5
Figure 2. Transfer Characteristics
16
15
14
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
Figure 1. On−Region Characteristics
18
17
3
TJ = −55°C
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
19
7
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0
−25
0
25
50
75
100
125
150
175
10
VGS = 0 V
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTD4970N
TYPICAL PERFORMANCE CURVES
TJ = 25°C
VGS = 0 V
1100
1000
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
900
800
Ciss
700
600
500
400
Coss
300
200
100
Crss
0
0
5
10
15
20
25
7
6
5
Qgs
Qgd
4
3
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 10 A
2
1
0
0
1
2
3 4
5 6
7
8
9 10 11 12 13 14 15 16
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (A)
VGS = 0 V
100
t, TIME (ns)
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDD = 15 V
ID = 15 A
VGS = 10 V
tf
td(off)
tr
10
td(on)
1
10
10
TJ = 25°C
5
0.4
0.5
0.6
0.7
0.8
0.9
Figure 10. Diode Forward Voltage vs. Current
100 ms
1 ms
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
dc
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10
0.01
0.01
15
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10 ms
0.1
TJ = 125°C
20
RG, GATE RESISTANCE (W)
100
1
25
0
0.3
100
1000
I D, DRAIN CURRENT (A)
QT
9
30
1000
1
10
12
11
ID = 15 A
10
9
8
7
6
5
4
3
2
1
0
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
1.0
175
NTD4970N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD4970N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
H
D
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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NTD4970N/D