IRFH5006PbF HEXFET® Power MOSFET VDS 60 V R DS(on) max 4.1 mΩ Qg (typical) 69 nC RG (typical) 1.2 Ω (@V GS = 10V) ID (@Tmb = 25°C) h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 4.1mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enables better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base part number Package Type IRFH5006PBF PQFN 5mm x 6mm ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRFH5006TRPBF Absolute Maximum Ratings Max. Units VDS VGS Drain-to-Source Voltage Gate-to-Source Voltage 60 ±20 V ID @ TA = 25°C ID @ TA = 70°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 21 17 ID @ Tmb = 25°C ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation 100 100 Parameter IDM PD @TA = 25°C c PD @ Tmb = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range h h 400 3.6 156 g 0.029 -55 to + 150 A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5006PbF Static @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Min. 60 ––– ––– 2.0 ––– ––– ––– ––– ––– 92 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.07 3.5 ––– -8.0 ––– ––– ––– ––– ––– 69 12 6.8 20 30.2 26.8 23 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 4.1 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150μA ––– mV/°C 20 VDS = 60V, VGS = 0V μA 250 VDS = 60V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 25V, ID = 50A 104 VDS = 30V ––– ––– VGS = 10V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V RG td(on) tr td(off) tf Ciss Coss Crss Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 9.6 13 30 12 4175 550 255 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current e Ω ns pF VDD = 30V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 30V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Max. 285 50 Units mJ A Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton Min. Typ. Max. Units h ––– ––– 100 c ––– A ––– 400 Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 30V di/dt = 500A/μs ––– ––– 1.3 V ––– 28 42 ns ––– 130 195 nC Time is dominated by parasitic Inductance S e e Thermal Resistance Parameter R θJC-mb R θJC (Top) R θJA R θJA (<10s) 2 Junction-to-Mounting Base Junction-to-Case Junction-to-Ambient f g Junction-to-Ambient g www.irf.com © 2015 International Rectifier Typ. Max. Units 0.5 ––– ––– 0.8 15 35 °C/W ––– 22 Submit Datasheet Feedback May 19, 2015 IRFH5006PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V 100 10 1 3.8V BOTTOM 10 3.8V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.1 1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C 10 TJ = 25°C 1 VDS = 25V ≤60μs PULSE WIDTH 0.1 ID = 50A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Crss 100 12.0 VDS= 48V VDS= 30V 10.0 VDS= 12V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V www.irf.com © 2015 International Rectifier 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH5006PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 T J = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 1msec 100 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 DC 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 150 4.0 VGS(th) , Gate threshold Voltage (V) Limited By Package 125 ID, Drain Current (A) 100μsec 100 75 50 25 0 3.5 3.0 2.5 2.0 ID = 150μA ID = 500μA ID = 1.0mA ID = 1.0A 1.5 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 10 1200 ID = 50A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH5006PbF 9 ID 7.9A 14A BOTTOM 50A TOP 1000 8 7 T J = 125°C 6 5 T J = 25°C 4 3 800 600 400 200 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5006PbF D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + V DD • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit V DS VGS Fig 16b. Unclamped Inductive Waveforms VDS RD 90% D.U.T. RG + -V DD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs L DUT 0 s VCC 1K Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH5006PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5006PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimension des ign to accommodate the component width Dimension des ign to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between s uccess ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QT Y Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5006PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F PQFN 5mm x 6mm Moisture Sensitivity Level RoHS compliant †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.23mH, RG = 25Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date 4/28/2015 5/19/2015 Comment • Updated package outline for “option B” and added package outline for “option G” on page 7. • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015