IRLH5034PbF HEXFET® Power MOSFET VDS 40 V R DS(on) max 3.2 mΩ Qg (typical) 43 nC RG (typical) 1.2 Ω (@VGS = 4.5V) ID (@Tmb = 25°C) h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features Low RDSon (≤3.2mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base part number Package Type IRLH5034PBF PQFN 5mm x 6mm ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRLH5034TRPBF Absolute Maximum Ratings VDS Parameter Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C PD @ Tmb = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range IDM PD @TA = 25°C g g Max. 40 c g ±16 29 23 100 100 h h 400 3.6 156 0.029 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5034PbF Static @ TJ = 25°C (unless otherwise specified) Output Charge Min. 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 130 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.04 2.0 2.7 ––– -6.4 ––– ––– ––– ––– ––– 82 43 8.1 5.0 24 5.9 29 31 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 2.4 VGS = 10V, ID = 50A mΩ VGS = 4.5V, ID = 50A 3.2 2.5 V VDS = VGS, ID = 150μA ––– mV/°C VDS = 40V, VGS = 0V 20 μA VDS = 40V, VGS = 0V, TJ = 125°C 250 VGS = 16V 100 nA -100 VGS = -16V ––– S VDS = 10V, ID = 50A ––– nC VGS = 10V, VDS = 20V, ID = 50A 65 ––– VDS = 20V ––– VGS = 4.5V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 21 54 31 21 4730 860 460 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 20V, VGS = 4.5V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM Units mJ A Max. 360 50 Min. Typ. Max. Units ––– ––– 100 ––– ––– 400 A c VSD trr Qrr ton Typ. ––– ––– d Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 400A/μs ––– ––– 1.3 V ––– 25 38 ns ––– 74 110 nC Time is dominated by parasitic Inductance e e Thermal Resistance Parameter Junction-to-Mounting Base Junction-to-Case Junction-to-Ambient R θJC-mb R θJC (Top) R θJA f R θJA (<10s) 2 g Junction-to-Ambient g www.irf.com © 2015 International Rectifier Typ. Max. Units 0.5 ––– ––– 0.8 15 35 °C/W ––– 22 Submit Datasheet Feedback May 20, 2015 IRLH5034PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V BOTTOM 100 10 2.7V 2.7V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 1 10 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 100 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C T J = 25°C 10 1 VDS = 25V ≤60μs PULSE WIDTH 0.1 ID = 50A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss Crss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 12.0 VDS= 32V VDS= 20V 10.0 VDS= 8.0V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V www.irf.com © 2015 International Rectifier 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback May 20, 2015 IRLH5034PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R (on) DS 1msec 100 10 10msec DC 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 1.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 200 3.0 VGS(th) , Gate threshold Voltage (V) Limited By Package ID, Drain Current (A) 100μsec 150 100 50 0 2.5 2.0 1.5 1.0 ID = 150μA ID = 500μA ID = 1.0mA ID = 1.0A 0.5 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 10 1600 ID = 50A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLH5034PbF ID 12A 18A BOTTOM 50A 1400 8 TOP 1200 1000 6 T J = 125°C 4 2 T J = 25°C 0 800 600 400 200 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5034PbF D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit V DS VGS Fig 16b. Unclamped Inductive Waveforms VDS RD 90% D.U.T. RG + -V DD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs L DUT 0 s VCC 1K Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 20, 2015 IRLH5034PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5034PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimension des ign to accommodate the component width Dimension des ign to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between s uccess ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QT Y Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5034PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F PQFN 5mm x 6mm Moisture Sensitivity Level RoHS compliant †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.29mH, RG = 50Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date 4/28/2015 5/20/2015 Comment • Updated package outline for “option B” and added package outline for “option G” on page 7 • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015