IRFP7530 Data Sheet (541 KB, EN)

StrongIRFET™
IRFP7530PbF
HEXFET® Power MOSFET
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC Inverters
VDSS
60V
RDS(on) typ.
max
1.65m
2.00m
ID (Silicon Limited)
281A
ID (Package Limited)
195A
D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
GD




TO-247
IRFP7530PbF
G
Gate
Package Type
IRFP7530PbF
TO-247
S
Source
Orderable Part Number
IRFP7530PbF
300
7
ID = 100A
Limited by package
250
6
5
4
TJ = 125°C
3
TJ = 25°C
2
200
150
100
50
0
1
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
D
Drain
Standard Pack
Form
Quantity
Tube
25
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m)
Base part number
S
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25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
281
Continuous Drain Current, VGS @ 10V (Silicon Limited)
199
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
Pulsed Drain Current 
760
Maximum Power Dissipation
341
Linear Derating Factor
2.3
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175 TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics 557
EAS (Thermally limited)
Single Pulse Avalanche Energy 
1102
EAS (Thermally limited)
Single Pulse Avalanche Energy 
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy 
EAR
Thermal Resistance Symbol
Parameter
Typ.
Max.
Junction-to-Case 
RJC
–––
0.44
Case-to-Sink, Flat Greased Surface
RCS
0.24
–––
Junction-to-Ambient

RJA
–––
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Units
A
W
W/°C
V
°C mJ
A
mJ
Units
°C/W Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
47
––– mV/°C Reference to 25°C, ID = 1mA 
1.65 2.00
VGS = 10V, ID = 100A 
m
2.10 –––
VGS = 6.0V, ID = 50A 
–––
3.7
V
VDS = VGS, ID = 250µA
–––
1.0
VDS =60 V, VGS = 0V
µA
––– 150
VDS =60V,VGS = 0V,TJ =125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
2.1
–––

Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 111µH, RG = 50, IAS = 100A, VGS =10V.
ISD  100A, di/dt  1338A/µs, VDD  V(BR)DSS, TJ 175°C.
Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 47A, VGS =10V.
2
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IRFP7530PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
242
–––
–––
–––
–––
–––
–––
Typ.
–––
274
64
83
191
52
141
td(off)
Turn-Off Delay Time
–––
172
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
104
13703
1266
806
–––
1267
–––
VGS = 0V, VDS = 0V to 48V
–––
1630
–––
VGS = 0V, VDS = 0V to 48V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
281
–––
–––
760
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
8.1
51
54
86
102
2.9
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID =100A
411
ID = 100A
–––
VDS = 30V
nC –––
VGS = 10V
–––
–––
VDD = 30V
–––
ID = 100A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 100A,VGS = 0V 
V/ns TJ = 175°C,IS =100A,VDS = 60V
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 100A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
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IRFP7530PbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
10
BOTTOM
4.5V
100
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25°C
TJ = 175°C
10
1
VDS = 25V
60µs PULSE WIDTH
0.1
2
3
4
5
6
ID = 100A
VGS = 10V
2.0
1.6
1.2
0.8
0.4
7
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14.0
1000000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
100000
C, Capacitance (pF)
100
2.4
100
Ciss
10000
Coss
Crss
1000
ID = 100A
12.0
VDS = 48V
VDS = 30V
VDS= 12V
10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
ID, Drain-to-Source Current(A)
1
VDS, Drain-to-Source Voltage (V)
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0
50
100
150
200
250
300
350
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFP7530PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
VGS = 0V
100µsec
100
Limited by Package
10
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.1
0.4
0.7
1.0
1.3
1.6
0.1
1.9
1
10
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
2.0
80
Id = 1.0mA
1.8
1.6
77
1.4
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
74
71
1.2
1.0
0.8
0.6
0.4
68
0.2
0.0
65
-60
-20
20
60
100
140
0
180
TJ , Temperature ( °C )
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (m)
10
Fig 12. Typical Coss Stored Energy
10
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
9
8
7
6
5
4
3
2
1
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFP7530PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
600
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav Submit Datasheet Feedback
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IRFP7530PbF
20
IF = 60A
VR = 51V
4.0
TJ = 25°C
TJ = 125°C
15
3.5
IRRM (A)
VGS(th), Gate threshold Voltage (V)
4.5
3.0
2.5
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.5
10
5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
TJ , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
450
20
IF = 100A
VR = 51V
IF = 60A
VR = 51V
400
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
350
QRR (nC)
15
IRRM (A)
400
10
300
250
200
150
5
100
50
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
QRR (nC)
400
350
IF = 100A
VR = 51V
300
TJ = 25°C
TJ = 125°C
250
200
150
100
50
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFP7530PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
IAS
20V
tp
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFP7530PbF
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFP7530PbF
Qualification Information† Industrial
(per JEDEC JESD47F) ††
Qualification Level Moisture Sensitivity Level
TO-247
N/A
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/7/2014
Comments


Updated EAS (L =1mH) = 1102mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 47A, VGS =10V”. on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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