StrongIRFET™ IRL40B212 IRL40S212 HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters D G S TO-220 D2-Pak ID (Package Limited) 195A S G D2-Pak IRL40S212 D Drain Standard Pack Form Quantity Tube 50 Tape and Reel 800 S Source Orderable Part Number IRL40B212 IRL40S212 300 6 ID = 100A Limited By Package 250 5 4 T J = 125°C 3 2 200 150 100 50 T J = 25°C 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On– Resistance vs. Gate Voltage 1 254A TO-220AB IRL40B212 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) IRL40B212 IRL40S212 ID (Silicon Limited) S D G G Gate Package Type 40V 1.5m 1.9m D Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free RoHS Compliant, Halogen-Free Base part number VDSS RDS(on) typ. max www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Max. 254 179 195 990 * 231 1.5 ± 20 Units A W W/°C V -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) 342 Single Pulse Avalanche Energy 790 EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current See Fig 15, 16, 23a, 23b Repetitive Avalanche Energy EAR TSTG Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount) RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Typ. ––– 0.50 ––– ––– Min. 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– Typ. Max. ––– ––– 0.03 ––– 1.5 1.9 1.9 2.4 ––– 2.4 ––– 1.0 ––– 150 ––– 100 ––– -100 1.6 ––– Max. 0.65 ––– 62 40 °C mJ A mJ Units °C/W Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 2mA VGS = 10V, ID = 100A m VGS = 4.5V, ID = 50A V VDS = VGS, ID = 150µA VDS = 40 V, VGS = 0V µA VDS = 40V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 950A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 40A, VGS =10V. * Pulse drain current is limited at 780A by source bonding technology. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 256 ––– ––– ––– ––– ––– ––– Typ. ––– 91 25 46 45 39 154 td(off) Turn-Off Delay Time ––– 88 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 84 8320 1050 790 ––– 1250 ––– VGS = 0V, VDS = 0V to 32V ––– 1580 ––– VGS = 0V, VDS = 0V to 32V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 254 ––– ––– 990* VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt ––– 6.0 ––– trr Reverse Recovery Time ––– 30 ––– Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– 32 26 28 1.4 ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID = 100A 137 ID = 100A ––– VDS = 20V nC ––– VGS = 4.5V ––– ––– VDD = 20V ID = 30A ––– ns ––– RG= 2.7 VGS = 4.5V ––– ––– ––– ––– VGS = 0V VDS = 25V pF ƒ = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2015 International Rectifier A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 100A,VGS = 0V V/ns TJ = 175°C,IS = 100A,VDS = 40V ns TJ = 25°C VDD = 34V TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 1000 1000 BOTTOM 100 3.25V 60µs PULSE WIDTH 100 60µs PULSE WIDTH Tj = 175°C 10 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 4. Typical Output Characteristics 1000 2.0 T J = 175°C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics T J = 25°C VDS = 10V 60µs PULSE WIDTH 10 ID = 100A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 100000 VGS, Gate-to-Source Voltage (V) ID = 100A Ciss 10000 Fig 6. Normalized On-Resistance vs. Temperature 14 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd C, Capacitance (pF) BOTTOM 3.25V Tj = 25°C Coss Crss 1000 12 VDS= 32V VDS= 20V 10 VDS= 8V 8 6 4 2 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.75V 3.25V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.75V 3.25V www.irf.com © 2015 International Rectifier 0 50 100 150 200 250 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 T J = 25°C T J = 175°C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 VGS = 0V 0.5 1.0 1.5 2.0 1000 100µsec 1msec 100 Limited by Package 10 10msec 1 0.1 2.5 1 10 100 VDS, Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 50 0.9 Id = 2.0mA 0.8 48 0.7 0.6 46 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC Tc = 25°C Tj = 175°C Single Pulse 0.1 10 0 OPERATION IN THIS AREA LIMITED BY RDS(on) 44 0.5 0.4 0.3 0.2 42 0.1 40 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -5 T J , Temperature ( °C ) 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( m ) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy 7.0 VGS = 3.5V VGS = 4.5V VGS = 6.0V VGS = 8.0V VGS = 10V 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On– Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 350 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A EAR , Avalanche Energy (mJ) 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 9 IF = 60A V R = 34V 8 2.0 7 TJ = 25°C TJ = 125°C 6 1.5 ID ID ID ID 1.0 0.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) 2.5 = 150µA = 250µA = 1.0mA = 1.0A 5 4 3 2 1 0.0 0 -75 -50 -25 0 25 50 75 100 125 150 0 200 T J , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 160 9 IF = 100A V R = 34V 8 7 IF = 60A V R = 34V TJ = 25°C 140 TJ = 25°C TJ = 125°C 120 QRR (nC) 6 IRRM (A) 400 5 4 3 TJ = 125°C 100 80 60 2 40 1 20 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 160 IF = 100A V R = 34V TJ = 25°C 140 QRR (nC) 120 TJ = 125°C 100 80 60 40 20 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " PART NUM BER IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B212/IRL40S212 Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-220 D Pak MSL1 Yes RoHS Compliant † N/A 2 Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015