NSS20200W6 20 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device http://onsemi.com −20 VOLTS, 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 65 mW COLLECTOR 1, 2, 5, 6 3 BASE MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −20 Vdc Collector-Base Voltage VCBO −20 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 A ICM −3.0 A Rating Collector Current − Continuous Collector Current − Peak 4 EMITTER SC−88/SOT−363 CASE 419B STYLE 20 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 426 mW 3.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 293 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 555 mW 4.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 225 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. DEVICE MARKING 6 VC M G 1 VC = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device NSS20200W6T1G Package Shipping† SC−88 (Pb−Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 2 1 Publication Order Number: NSS20200W6/D NSS20200W6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −20 − − −20 − − −7.0 − − − − −0.1 − − −0.1 250 220 200 160 370 325 290 245 − − − − − − − − − −0.010 −0.067 −0.102 −0.128 −0.177 −0.014 −0.092 −0.126 −0.165 −0.215 − − −0.900 − − −0.900 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −20 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.010 A) (Note 4) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) (IC = −2.0 A, IB = −0.020 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − − 330 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − − 90 pF Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) td − − 65 ns Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) ts − − 320 ns Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tf − − 125 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. http://onsemi.com 2 NSS20200W6 TYPICAL CHARACTERISTICS 25°C 0.10 0.08 0.06 0.04 0.02 720 680 640 600 560 520 480 440 400 360 320 280 240 200 160 120 0.001 0.01 0.1 1 10 IC/IB = 100 0.18 150°C 0.16 0.14 25°C 0.12 0.10 0.08 0.06 0.04 0.02 0.001 1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150°C (2.0 V) 25°C (5.0 V) 25°C (2.0 V) −55°C (5.0 V) −55°C (2.0 V) 0.001 0.01 0.1 1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current −55°C 25°C 0.7 150°C 0.5 0.4 0.3 0.001 0.01 10 1.0 IC/IB = 100 0.6 10 IC/IB = 10 1.0 IC, COLLECTOR CURRENT (A) 0.8 0.2 0.1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5.0 V) 0.9 0.01 IC, COLLECTOR CURRENT (A) 1.1 1.0 −55°C IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 0.12 0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.14 0.20 −55°C IC/IB = 10 VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.16 0.1 1 10 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Turn−On Voltage vs. Collector Current http://onsemi.com 3 10 NSS20200W6 TYPICAL CHARACTERISTICS 1.0 VCE COLLECTOR−EMITTER VOLTAGE (V) 1A 330 2A Cibo, INPUT CAPACITANCE (pF) 10 mA 0.9 100 mA 0.8 0.7 200 mA 0.6 0.5 500 mA 0.4 0.3 0.2 0.1 0 0.00001 0.0001 0.001 0.01 0.1 290 270 250 230 210 190 170 150 130 0 1 2 3 4 5 Veb, EMITTER BASE VOLTAGE (V) Figure 7. Saturation Region Figure 8. Input Capacitance 6 10 140 Cobo (pF) IC, COLLECTOR CURRENT (A) Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) Ib, BASE CURRENT (A) 150 130 120 110 100 90 80 70 60 50 310 0 1 2 3 4 5 6 7 8 1 ms 1 10 ms 1s Thermal Limit 0.01 0.001 0.01 9 10 11 12 13 14 15 100 ms 0.1 Single Pulse Test @ TA = 25°C 0.1 1 10 Vcb, COLLECTOR BASE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Safe Operating Area http://onsemi.com 4 100 NSS20200W6 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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