MTP3N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Capability Specified at Elevated Temperature • Low Stored Gate Charge for Efficient Switching • Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode • Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode http://onsemi.com TMOS POWER FET 3.0 AMPERES, 500 VOLTS RDS(on) = 3.0 W TO−220AB CASE 221A−06 Style 5 D ® G S © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: MTP3N50E/D MTP3N50E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 500 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Vdc Gate−Source Voltage — Continuous Gate−Source Voltage — Non−repetitive (tp ≤ 50 μs) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Pulsed ID IDM 3.0 10 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 50 0.4 Watts W/°C TJ, Tstg −65 to 150 °C WDSR (1) mJ WDSR (2) 210 33 5.0 RθJC RθJA 2.5 62.5 °C/W TL 260 °C Operating and Storage Temperature Range UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — TJ = 25°C Single Pulse Drain−to−Source Avalanche Energy — TJ = 100°C Repetitive Pulse Drain−to−Source Avalanche Energy THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case° — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds (1) VDD = 50 V, ID = 3.0 A (2) Pulse Width and frequency is limited by TJ(max) and thermal response Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. http://onsemi.com 2 MTP3N50E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain−to−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 500 — — Vdc Zero Gate Voltage Drain Current (VDS = 500 V, VGS = 0) (VDS = 400 V, VGS = 0, TJ = 125°C) IDSS — — — — 0.25 1.0 OFF CHARACTERISTICS mAdc Gate−Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF — — 100 nAdc Gate−Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR — — 100 nAdc 2.0 1.5 — — 4.0 3.5 — 2.4 3.0 — — — — 10 8.0 gFS 1.0 — — mhos Ciss — 435 — pF Coss — 56 — Crss — 9.2 — td(on) — 14 — tr — 14 — td(off) — 30 — tf — 20 — Qg — 15 21 Qgs — 2.5 — Qgd — 10 — VSD — — 1.5 Vdc ton — ** — ns trr — 200 — — — 3.5 4.5 — — — 7.5 — ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) (TJ = 125°C) VGS(th) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 1.5 Adc) RDS(on) Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 3.0 A) (ID = 1.5 A, TJ = 100°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc) Vdc Ohm Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS* Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 250 V, ID ≈ 3.0 A, RG = 18 Ω, RL = 83 Ω, VGS(on) = 10 V) Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = 400 V, ID = 3.0 A, VGS = 10 V) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS* Forward On−Voltage Forward Turn−On Time Reverse Recovery Time (IS = 3.0 A) (IS = 3.0 A, di/dt = 100 A/μs) INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) Ld Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) Ls * Indicates Pulse Test: Pulse Width = 300 μs Max, Duty Cycle ≤ 2.0%. ** Limited by circuit inductance. http://onsemi.com 3 nH MTP3N50E VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 6 I D, DRAIN CURRENT (AMPS) TJ = 25°C 5 VGS = 10 V 7V 4 6V 3 2 1 0 5V 4V 0 2 4 8 12 16 6 10 14 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 18 20 1.2 1 0.9 0.8 −50 5 I D, DRAIN CURRENT (AMPS) VDS ≥ 10 V 4 3 2 100°C 0 25°C 0 TJ = −55°C 2 4 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 8 RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) 6 TJ = 100°C 4 25°C 2 −55°C 2 3 1 VGS = 0 ID = 250 μA 1.1 1 0.9 0.8 −50 0 50 100 1 Figure 4. Breakdown Voltage Variation With Temperature VGS = 10 V 1 125 TJ, JUNCTION TEMPERATURE (°C) 8 0 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 1.2 Figure 3. Transfer Characteristics 0 −25 Figure 2. Gate−Threshold Voltage Variation With Temperature VBR(DSS), DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Figure 1. On−Region Characteristics 1 VDS = VGS ID = 0.25 mA 1.1 4 2.5 VGS = 10 V ID = 1.5 A 2 1.5 1 0.5 5 −50 −25 0 25 50 75 100 125 ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance versus Drain Current Figure 6. On−Resistance versus Temperature http://onsemi.com 4 1 MTP3N50E SAFE OPERATING AREA INFORMATION 16 1 μs VGS = 20 V SINGLE PULSE TC = 25°C 10 μs I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 10 100 μs 1 1 ms 0.1 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 ms dc 12 8 TJ ≤ 150°C 4 0 1 100 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 1000 Figure 7. Maximum Rated Forward Biased Safe Operating Area 60 500 100 200 300 400 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Maximum Rated Switching Safe Operating Area applicable for both turn−on and turn−off of the devices for switching times less than one microsecond. FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain−to−source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25°C and a maximum junction temperature of 150°C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, “Transient Thermal Resistance−General Data and Its Use” provides detailed instructions. t, TIME (ns) 1000 VDD = 250 V ID = 3 A VGS = 10 V TJ = 25°C 100 1 td(on) tf 10 SWITCHING SAFE OPERATING AREA td(off) tr 1 The switching safe operating area (SOA) of Figure 8 is the boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, V (BR)DSS . The switching SOA shown in Figure 8 is 10 100 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance http://onsemi.com 5 100 RGS DUT I , DRAIN CURRENT (AMPS) r(t),D EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MTP3N50E 4 3 2 1 0 − 1 0.7 0.5 0.3 IFM + 0.1 0.07 0.05 0.03 0.02 VDS + 0.1 20 V − VGS P(pk) 0.05 RθJC(t) = r(t) RθJC RθJC = 2.5°C/W MAX VR = 80%APPLY OF RATED DS D CURVES FOR VPOWER VdsL =TRAIN Vf + LSHOWN i ⋅ dls/dt PULSE READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 0.02 di/dt ≤ 50 A/μs 0.01 SINGLE PULSE 0.02 0.03 0.05 t1 Li IS 0.2 0.2 0.01 0.01 0 VR D = 0.5 t2 DUTY13. CYCLE, D = t1/t2 Figure Commutating Safe Operating Area Test Circuit 0.1 0.2 0.3 0.5 500 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3 1 2 600 t, TIME (ms) 5 10 20 30 50 100 V(BR)DSSResponse Figure 10. Thermal Figure 12. Commutating Safe Operating Area (CSOA) 200 300 500 10 Vds(t) COMMUTATING SAFE OPERATING AREA (CSOA) IO 15 V The Commutating Safe Operating Area (CSOA) of L safe operation for Figure 12 defines the limits of commutated source-drain current versus re-applied drain VDS C voltage when the source-drain diode has4700 undergone μF ID forward bias. The curve shows the limitations of VIFM and 250 peak VR for a given commutation speed. It is applicable VDD when waveforms similar to those of Figure 11 are present. Full or half-bridge PWM DC motor controllers are common applications trequiring CSOA data. The time interval tfrr is Rthe GS speed of the commutation 50 Ω cycle. Device stresses increase with commutation speed, so t frr is specified with a minimum value. Faster commutation speeds require an appropriate of IFM, Figure 14. Unclamped Inductive derating Switching peak VR or both. Ultimately, t is limited primarily by device, frr Circuit Test package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain−to−source voltage that the device must sustain during commutation; I FM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR)DSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero. RGS should be minimized during commutation. TJ has only a second order effect on CSOA. Stray inductances, L i in Motorola’s test circuit are assumed to be practical minimums. VGS 0 IFM ID(t) 90% dls/dt IS trr 10% VDD ton IRM tP t, (TIME) 0.25 IRM V(BR)DSS WDSR + 1 LIO2 2 V(BR)DSS–VDD VDS(pk) ǒ VDS Ǔǒ Ǔ VR Figure 15. Unclamped Inductive Switching Waveforms dV /dt DS Vf VdsL MAX. CSOA STRESS AREA Figure 11. Commutating Waveforms http://onsemi.com 6 MTP3N50E TJ = 25°C VGS = 0 800 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1000 600 Ciss 400 Crss 200 Coss VDS = 0 0 5 10 5 0 VGS 15 10 20 16 250 V TJ = 25°C ID = 3 A 12 400 V 8 4 0 25 VDS = 100 V 0 5 10 15 QG, TOTAL GATE CHARGE (nC) VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 16. Capacitance Variation Figure 17. Gate Charge versus Gate−To−Source Voltage +18 V VDD 1 mA 47 k Vin 20 10 V 15 V SAME DEVICE TYPE AS DUT 100 k 2N3904 0.1 μF 2N3904 100 k 47 k 100 FERRITE BEAD Vin = 15 Vpk; PULSE WIDTH ≤ 100 μs, DUTY CYCLE ≤ 10% Figure 18. Gate Charge Test Circuit http://onsemi.com 7 DUT 2 MTP3N50E PACKAGE DIMENSIONS CASE 221A−06 ISSUE Y −T− B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 A Q 1 2 3 STYLE 5: PIN 1. 2. 3. 4. U H K Z L GATE DRAIN SOURCE DRAIN R V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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