Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 25 V ID = 75 A RDS(ON) ≤ 4 mΩ (VGS = 10 V) g RDS(ON) ≤ 5 mΩ (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:• d.c. to d.c. converters • switched mode power supplies The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN004-25B is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) PIN SOT404 (D2PAK) DESCRIPTION tab tab 1 gate 2 drain1 3 source tab 2 drain 1 1 23 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDSS VDGR VGS VGSM ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Continuous gate-source voltage Peak pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature MIN. MAX. UNIT Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ - 25 25 ± 16 V V V Tj ≤ 150 ˚C - ± 20 V - 55 752 752 240 230 175 A A A W ˚C Tmb = 25 ˚C; VGS = 5 V Tmb = 100 ˚C; VGS = 5 V Tmb = 25 ˚C Tmb = 25 ˚C 1 It is not possible to make connection to pin:2 of the SOT404 package 2 maximum continuous current limited by package January 2000 1 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, vertical in still air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT - - 0.65 K/W - 60 50 - K/W K/W AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy IAS Non-repetitive avalanche current CONDITIONS MIN. MAX. UNIT - 120 mJ - 75 A Unclamped inductive load, IAS = 75 A; tp = 100 µs; Tj prior to avalanche = 25˚C; VDD ≤ 15 V; RGS = 50 Ω; VGS = 5 V ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS = 0 V; ID = 0.25 mA; VGS(TO) Drain-source breakdown voltage Gate threshold voltage MIN. Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C RDS(ON) IGSS IDSS Drain-source on-state resistance VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A VGS = 4.5 V; ID = 25 A VGS = 5 V; ID = 25 A; Tj = 175˚C Gate-source leakage current VGS = ± 10 V; VDS = 0 V; Zero gate voltage drain VDS = 25 V; VGS = 0 V; current Tj = 175˚C TYP. MAX. UNIT 25 22 1 0.5 - 1.5 3.5 4 0.02 0.05 - 2 2.3 4 5 5.4 9.25 100 10 500 V V V V V mΩ mΩ mΩ mΩ nA µA µA Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 75 A; VDD = 15 V; VGS = 5 V - 97 20 39 - nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 15 V; RD = 1.2 Ω VGS = 5 V; RG = 5.6 Ω Resistive load - 45 220 435 320 - ns ns ns ns Ld Ld Internal drain inductance Internal drain inductance - 3.5 4.5 - nH nH Ls Internal source inductance Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad - 7.5 - nH Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz - 6000 1700 1400 - pF pF pF January 2000 2 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IS VSD Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge ISM January 2000 CONDITIONS MIN. TYP. MAX. UNIT - - 75 A - - 240 A IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V - 0.85 1.1 1.2 - V IF = 20 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 25 V - 400 1 - ns µC 3 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P Normalised Power Derating, PD (%) 1 Transient thermal impedance, Zth j-mb (K/W) 100 D = 0.5 90 0.2 80 0.1 70 0.1 60 0.05 50 0.02 40 P D 0.01 D = tp/T tp 30 single pulse 20 T 10 0.001 1E-06 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse width, tp (s) Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Drain Current, ID (A) 100 Normalised Current Derating, ID (%) 100 10 V 4.5 V 5V 80 Tj = 25 C 2.8 V 90 90 VGS = 2.6 V 80 70 70 60 60 50 50 40 40 30 30 20 2.4 V 2.2 V 20 10 2V 10 0 1.8 V 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 0 175 0 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb) 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 1.8 2 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS) Peak Pulsed Drain Current, IDM (A) 1000 0.2 0.02 RDS(on) = VDS/ ID Drain-Source On Resistance, RDS(on) (Ohms) 2V 0.018 tp = 10 us 2.2 V 2.4 V 2.6 V 0.016 100 us 100 0.014 1 ms D.C. 0.012 0.01 10 ms 100 ms 10 2.8 V 0.008 0.006 5V 4.5 V 0.004 VGS = 10V 0.002 1 Tj = 25 C 0 1 10 Drain-Source Voltage, VDS (V) 100 0 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp January 2000 10 20 30 40 50 60 Drain Current, ID (A) 70 80 90 100 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID) 4 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P Threshold Voltage, VGS(TO) (V) Drain current, ID (A) 2.25 100 VDS > ID X RDS(ON) 90 2 maximum 1.75 80 70 1.5 typical 60 1.25 50 1 40 minimum 175 C 0.75 30 20 0.5 Tj = 25 C 10 0.25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 3 -60 -40 -20 0 Gate-source voltage, VGS (V) 40 60 80 100 120 140 160 180 Junction Temperature, Tj (C) Fig.7. Typical transfer characteristics. ID = f(VGS) Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Transconductance, gfs (S) 140 20 Drain current, ID (A) 1.0E-01 Tj = 25 C VDS > ID X RDS(ON) VDS = 5 V 120 1.0E-02 175 C 100 1.0E-03 80 minimum 60 typical maximum 1.0E-04 40 1.0E-05 20 0 1.0E-06 0 10 20 30 40 50 60 70 Drain current, ID (A) 80 90 100 0 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID) 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.5 1 1.5 2 Gate-source voltage, VGS (V) 2.5 3 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised On-state Resistance 100000 Capacitances, Ciss, Coss, Crss (pF) 10000 Ciss Coss Crss 1000 -60 -40 -20 0 20 40 60 80 100 Junction temperature, Tj (C) 120 140 160 180 0.1 Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 ˚C = f(Tj) January 2000 1 10 Drain-Source Voltage, VDS (V) 100 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 5 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P Gate-source voltage, VGS (V) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Maximum Avalanche Current, IAS (A) 100 ID = 75 A 25 C VDD = 15 V Tj = 25 C Tj prior to avalanche = 150 C 10 0 25 50 75 100 125 150 175 Gate charge, QG (nC) 200 225 1 0.001 250 0.01 0.1 1 10 Avalanche time, tAV (ms) Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG) Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tAV); unclamped inductive load Source-Drain Diode Current, IF (A) 100 VGS = 0 V 90 80 70 60 50 40 175 C 30 Tj = 25 C 20 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Source-Drain Voltage, VSDS (V) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj January 2000 6 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 e e 3 c b 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 e L L1 2.54 15.0 13.5 3.30 2.79 L2 max. P q Q 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g) Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to mounting instructions for SOT78 (TO220AB) package. 3. Epoxy meets UL94 V0 at 1/8". January 2000 7 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 OUTLINE VERSION D max. D1 E 11 1.60 1.20 10.30 9.70 e Lp HD Q 2.54 2.90 2.10 15.40 14.80 2.60 2.20 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT404 Fig.17. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". January 2000 8 Rev 1.200 Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 2000 9 Rev 1.200