Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFG35010AN
Rev. 4, 8/2013
Gallium Arsenide pHEMT
RF Power Field Effect Transistor
MRFG35010ANT1
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
customer premise equipment (CPE) applications.
 Typical Single--Carrier W--CDMA Performance: VDD = 12 Vdc, IDQ = 130 mA,
3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Frequency
(MHz)
Pout
(W)
Gps
(dB)
ACPR
(dBc)
D
(%)
IRL
(dB)
750
1
14.5
--44.0
24.0
--15
2140
1
13.0
--43.0
25.0
--14
2650
1
11.5
--43.0
30.0
--15
500--5000 MHz, 9 W, 12 V
POWER FET
GaAs pHEMT
Features




9 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Efficiency and High Linearity
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.
PLD--1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
15
Vdc
Gate--Source Voltage
VGS
--5
Vdc
RF Input Power
Pin
33
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Channel Temperature (1)
Tch
175
C
Symbol
Value (2)
Unit
RJC
6.5
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77C, 1 W CW
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
1. For reliable operation, the operating channel temperature should not exceed 150C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2006, 2008--2009, 2012--2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRFG35010ANT1
1
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = --0.4 Vdc, VDS = 0 Vdc)
IGSS
—
<1
100
Adc
Off State Drain Current
(VDS = 12 Vdc, VGS = --2.2 Vdc)
IDSO
—
0.1
1
mAdc
Off State Current
(VDS = 28.5 Vdc, VGS = --2.5 Vdc)
IDSX
—
2
15
mAdc
Gate--Source Cut--off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
--1.2
--1.0
--0.7
Vdc
Quiescent Gate Voltage
(VDS = 12 Vdc, IDQ = 180 mA)
VGS(Q)
--1.2
--0.95
--0.7
Vdc
Characteristic
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f = 3550 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
9
10
—
dB
Drain Efficiency
ηD
23
25
—
%
ACPR
—
--43
--40
dBc
—
W
Adjacent Channel Power Ratio
Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
9
MRFG35010ANT1
2
RF Device Data
Freescale Semiconductor, Inc.
C11
C10
C9
C14
C8
C15
C7
C16
C13
C12
C17
C6
C18
C5
C19
R1
C4
C20
C3
C1
C2
C22
C21
MRFG35010AN
Rev. 6
3500MHz -- 3600MHz
Figure 1. MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz
Table 6. MRFG35010ANT1 Test Circuit Component Designations and Values — 3550 MHz
Part
Description
Part Number
Manufacturer
C1, C21, C22
0.5 pF Chip Capacitors
08051J0R5BBT
AVX
C2
0.2 pF Chip Capacitor
06035J0R2BBT
AVX
C3
0.5 pF Chip Capacitor
06035J0R5BBT
AVX
C4, C19, C20
6.8 pF Chip Capacitors
08051J6R8BBT
AVX
C5, C18
10 pF Chip Capacitors
ATC100A100JP150XT
ATC
C6, C17
100 pF Chip Capacitors
ATC100A101JP150XT
ATC
C7, C16
100 pF Chip Capacitors
ATC100B101JP500XT
ATC
C8, C15
1000 pF Chip Capacitors
ATC100B102JP50XT
ATC
C9, C14
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C10, C13
39K pF Chip Capacitors
ATC200B393KP50XT
ATC
C11, C12
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
R1
50  Chip Resistor
P51ETR--ND
Newark
PCB
0.020, r = 3.5
RO4350B
Rogers
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
3
VGG
VDD
C11
C10
C9
C8
C7
C6
C5
C18
C4
C17
C16
C15
C14
C13
C12
C19
Z9
Z12
R1
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z5
Z4
Z6
Z7
Z8
Z10 Z11
Z13
Z14
Z15
C20
C3
C1
Z17
Z16
C2
C22
C21
Figure 2. MRFG35010ANT1 Test Circuit Schematic — 3550 MHz
Table 7. MRFG35010ANT1 Test Circuit Microstrips — 3550 MHz
Microstrip
Description
Microstrip
Description
Z1
0.045 x 0.689 Microstrip
Z9
0.025 x 0.485 Microstrip
Z2
0.045 x 0.089 Microstrip
Z11
0.400 x 0.215 Microstrip
Z3
0.020 x 0.360 Microstrip
Z12
0.025 x 0.497 Microstrip
Z4
0.045 x 0.029 Microstrip
Z13
0.025 x 0.271 Microstrip
Z5
0.045 x 0.061 Microstrip
Z14
0.025 x 0.363 Microstrip
Z6
0.045 x 0.055 Microstrip
Z15
0.025 x 0.041 Microstrip
Z7
0.300 x 0.125 Microstrip
Z16
0.045 x 0.050 Microstrip
Z8, Z10
0.146 x 0.070 Microstrip
Z17
0.045 x 0.467 Microstrip
MRFG35010ANT1
4
RF Device Data
Freescale Semiconductor, Inc.
12
50
10
40
6
4
2
GT
VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
S = 0.875  --131.0_
L = 0.849  --145.8_
8
20
10
D
10
15
30
20
25
30
35
D, DRAIN EFFICIENCY (%)
GT, TRANSDUCER GAIN (dB)
TYPICAL CHARACTERISTICS — 3550 MHz
0
40
Pout, OUTPUT POWER (dBm)
--10
VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
S = 0.875  --131.0_, L = 0.849  --145.8_
--20
--10
--15
IRL
--30
--20
--40
--25
--50
--30
ACPR
--60
15
20
25
30
35
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 3. Single--Carrier W--CDMA Power Gain
and Drain Efficiency versus Output Power
--35
40
Pout, OUTPUT POWER (dBm)
Figure 4. Single--Carrier W--CDMA ACPR and
Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 3550 MHz
12
Gps, POWER GAIN (dB)
60
VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
10
50
40
Gps
8
30
6
20
D
4
10
2
20
28
24
D, DRAIN EFFICIENCY (%)
14
32
36
0
40
Pout, OUTPUT POWER (dBm)
--10
--5
VDD = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
--20
--30
--10
--15
IRL
--20
--40
--50
--25
ACPR
--60
20
25
30
35
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 5. Single--Carrier W--CDMA Power Gain
and Drain Efficiency versus Output Power
--30
40
Pout, OUTPUT POWER (dBm)
Figure 6. Single--Carrier W--CDMA ACPR and
Input Return Loss versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35010ANT1
6
RF Device Data
Freescale Semiconductor, Inc.
Zo = 25 
Zload
Zsource
f = 3550 MHz
f = 3550 MHz
VDD = 12 Vdc, IDQ = 130 mA, Pout = 1 W Avg.
f
MHz
Zsource

Zload

3550
4.0 -- j22.6
4.5 -- j15.3
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance — 3550 MHz
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
7
--VGG
+VDD
C8
C7
C12 C11
C9
C6
C13
C5
C14
C4
C3
C15
C16
R1
C1
L2
L1
C20
C10
C19
Q1
C2
R2
C18
C17
C21
MRFG35010AN Rev. 2
700MHz -- 900MHz
Figure 8. MRFG35010ANT1 Test Circuit Component Layout — 750 MHz
Table 8. MRFG35010ANT1 Test Circuit Component Designations and Values — 750 MHz
Part
Description
Part Number
Manufacturer
C1, C19
100 pF Chip Capacitors
ATC600F101JT250XT
ATC
C2
10 pF Chip Capacitor
ATC600F100JT250XT
ATC
C3, C16
10 pF Chip Capacitors
ATC100A100JP150XT
ATC
C4, C15
100 pF Chip Capacitors
ATC100A101JP150XT
ATC
C5, C14
100 pF Chip Capacitors
ATC100B101JP500XT
ATC
C6, C13
1000 pF Chip Capacitors
ATC100B102JP50XT
ATC
C7, C12
0.1 F Chip Capacitors
CDR33BX104AKWS
AVX
C8, C11
39K pF Chip Capacitors
ATC200B393KP500XT
ATC
C9, C10
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C17
1.8 pF Chip Capacitor
ATC600F1R8BT250XT
ATC
C18
6.8 pF Chip Capacitor
ATC600F6R8BT250XT
ATC
C20
22 pF Chip Capacitor
ATC600F220JT250XT
ATC
C21
1 pF Chip Capacitor
ATC600F1R0BT250XT
ATC
L1, L2
18 nH Chip Inductors
LL1608--FSL18NJ
TOKO
Q1
Power FET GaAs Transistor
MRFG35010ANT1
Freescale
R1
51 , 1/10 W Chip Resistor
RM73B1JT510J
KOA Speer
R2
4.7 , 1/10 W Chip Resistor
CR10--4R7J--T
Kyocera
PCB
0.020, r = 3.5
RO4350B
Rogers
MRFG35010ANT1
8
RF Device Data
Freescale Semiconductor, Inc.
VGG
+
C9
C8
C7
C6
C5
C14
RF
INPUT
C12
C11
Z2
C1
Z3
Z4
Z5
C2
R2
VDD
C16
Z8
R1
Z11
L1
L2
RF
OUTPUT
C20
Z1
+
C10
C15
C4
C3
C13
Z6
Z7
Z9
Z10
C21
Z12
Z13
C17
Z14
C18
Z15
C19
Figure 9. MRFG35010ANT1 Test Circuit Schematic — 750 MHz
Table 9. MRFG35010ANT1 Test Circuit Microstrips — 750 MHz
Microstrip
Description
Microstrip
Description
Z1
0.045 x 0.633 Microstrip
Z8
0.025 x 0.155 Microstrip
Z2
0.045 x 0.044 Microstrip
Z10
0.325 x 0.255 Microstrip
Z3
0.045 x 0.422 Microstrip
Z11
0.025 x 0.168 Microstrip
Z4
0.090 x 0.030 Microstrip
Z12
0.045 x 0.080 Microstrip
Z5
0.110 x 0.050 Microstrip
Z13
0.045 x 0.600 Microstrip
Z6
0.285 x 0.200 Microstrip
Z14
0.045 x 0.089 Microstrip
Z7, Z9
0.146 x 0.070 Microstrip
Z15
0.045 x 0.400 Microstrip
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 750 MHz
10
20
VDD = 12 Vdc, IDQ = 130 mA, 25C
S11, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
15
10
5
0
--5
--10
VDD = 12 Vdc, IDQ = 130 mA, 25C
5
0
--5
--10
--15
--20
--25
--15
--20
500
1000
1500
2000
2500
3000
--30
500
3500
1000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 10. Small--Signal Gain versus Frequency
Figure 11. Input Return Loss versus Frequency
S22, OUTPUT RETURN LOSS (dB)
10
VDD = 12 Vdc, IDQ = 130 mA, 25C
5
0
--5
--10
--15
--20
--25
--30
500
1000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
Figure 12. Output Return Loss versus Frequency
MRFG35010ANT1
10
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 750 MHz
16
Gps, POWER GAIN (dB)
60
VDD = 12 Vdc, IDQ = 130 mA, f = 750 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01%Probability (CCDF)
14
50
40
Gps
12
30
20
10
D
8
10
6
20
D, DRAIN EFFICIENCY (%)
18
25
30
35
0
40
Pout, OUTPUT POWER (dBm)
--10
VDD = 12 Vdc, IDQ = 130 mA, f = 750 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--20
--5
--10
--15
--30
IRL
--20
--40
ACPR
--50
--25
--60
20
25
30
35
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 13. Single--Carrier W--CDMA Power Gain
and Drain Efficiency versus Output Power
--30
40
Pout, OUTPUT POWER (dBm)
Figure 14. Single--Carrier W--CDMA ACPR and
Input Return Loss versus Output Power
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
11
--VGG
+VDD
C9
C7
C8
C12 C11
C6
C13
C5
C14
C4
C15
C16
C3
R1
C1
C10
C17
L2
L1
Q1
RF IN
C2
RF OUT
C18
MRFG35010AN
Rev. 0
2100MHz -- 2200MHz
Figure 15. MRFG35010ANT1 Test Circuit Component Layout — 2140 MHz
Table 10. MRFG35010ANT1 Test Circuit Component Designations and Values — 2140 MHz
Part
Description
Part Number
Manufacturer
C1
4.7 pF Chip Capacitor
080514R7BBS
AVX
C2
0.5 pF Chip Capacitor
08051J0R5BBS
AVX
C3, C16
10 pF Chip Capacitors
ATC100A100JP150XT
ATC
C4, C15
100 pF Chip Capacitors
ATC100A101JP150XT
ATC
C5, C14
100 pF Chip Capacitors
ATC100B101JP500XT
ATC
C6, C13
1000 pF Chip Capacitors
ATC100B102JP50XT
ATC
C7, C12
0.1 F Chip Capacitors
CDR33BX104AKWS
AVX
C8, C11
39K pF Chip Capacitors
ATC200B393KP500XT
ATC
C9, C10
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C17
15 pF Chip Capacitor
08051J150GBS
AVX
C18
1.5 pF Chip Capacitor
08051J1R5BBS
AVX
L1
3.9 nH Inductor
LL1608--FH3N9S
TOKO
L2
8.2 nH Inductor
LL1608--FH8N2S
TOKO
Q1
Power FET GaAs Transistor
MRFG35010ANT1
Freescale
R1
75 , 1/8 W Chip Resistor
ERJ--6GEYJ750V
Panasonic
PCB
0.020, r = 3.5
RO4350B
Rogers
MRFG35010ANT1
12
RF Device Data
Freescale Semiconductor, Inc.
VGG
+
C9
C8
C7
C6
C5
C14
C13
C12
C11
+
C10
VDD
C15
C4
C3
C16
R1
Z8
L2
L1
RF
INPUT
Z1
Z2
C1
Z3
C2
Z5
Z4
Z6
Z7
Z9
Z10
RF
OUTPUT
Z12
Z13
Z11
C18
Z14
C19
Figure 16. MRFG35010ANT1 Test Circuit Schematic — 2140 MHz
Table 11. MRFG35010ANT1 Test Circuit Microstrips — 2140 MHz
Microstrip
Z1, Z14
Description
0.045 x 0.295 Microstrip
Microstrip
Description
Z7, Z9
0.146 x 0.070 Microstrip
Z2
0.045 x 0.224 Microstrip
Z8
0.045 x 0.098 Microstrip
Z3
0.045 x 0.515 Microstrip
Z10
0.200 x 0.040 Microstrip
Z4
0.105 x 0.045 Microstrip
Z11
0.260 x 0.020 Microstrip
Z5
0.045 x 0.023 Microstrip
Z12
0.200 x 0.632 Microstrip
Z6
0.450 x 0.312 Microstrip
Z13
0.045 x 0.420 Microstrip
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — 2140 MHz
10
20
VDD = 12 Vdc, IDQ = 130 mA, 25C
S11, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
15
10
5
0
--5
--10
VDD = 12 Vdc, IDQ = 130 mA, 25C
5
0
--5
--10
--15
--20
--25
--15
--20
500
1000
1500
2000
2500
3000
--30
500
3500
1000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 17. Small--Signal Gain versus Frequency
Figure 18. Input Return Loss versus Frequency
S22, OUTPUT RETURN LOSS (dB)
10
VDD = 12 Vdc, IDQ = 130 mA, 25C
5
0
--5
--10
--15
--20
--25
--30
500
1000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
Figure 19. Output Return Loss versus Frequency
MRFG35010ANT1
14
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2140 MHZ
18
Gps, POWER GAIN (dB)
16
14
50
40
12
30
20
10
D
8
10
6
20
30
25
D, DRAIN EFFICIENCY (%)
60
VDD = 12 Vdc, IDQ = 130 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
Gps
35
0
40
Pout, OUTPUT POWER (dBm)
--10
VDD = 12 Vdc, IDQ = 140 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--20
--30
----5
--10
--15
IRL
--20
--40
ACPR
--25
--50
--60
20
25
30
35
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 20. Single--Carrier W--CDMA Power Gain
and Drain Efficiency versus Output Power
--30
40
Pout, OUTPUT POWER (dBm)
Figure 21. Single--Carrier W--CDMA ACPR and
Input Return Loss versus Output Power
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
15
+VDD
--VGG
C7
C8
C9
C12 C11
C6
C13
C5
C14
C4
C15
C16
C3
R1
C18
C1
L1
C10
C17
L2
C21
Q1
RF IN
C2*
C20
C19
RF OUT
MRFG35010AN
Rev. 0
2600MHz -- 2700MHz
Note: Component number C2* is labeled on board but not placed.
Figure 22. MRFG35010ANT1 Test Circuit Component Layout — 2650 MHz
Table 12. MRFG35010ANT1 Test Circuit Component Designations and Values — 2650 MHz
Part
Description
C1
4.7 pF Chip Capacitor
C2
Component Not Placed
C3, C16
C4, C15
Part Number
Manufacturer
080514R7BBS
AVX
10 pF Chip Capacitors
ATC100A100JP150XT
ATC
100 pF Chip Capacitors
ATC100A101JP150XT
ATC
C5, C14
100 pF Chip Capacitors
ATC100B101JP500XT
ATC
C6, C13
1000 pF Chip Capacitors
ATC100B102JP50XT
ATC
C7, C12
0.1 F Chip Capacitors
CDR33BX104AKWS
AVX
C8, C11
39K pF Chip Capacitors
ATC200B393KP500XT
ATC
C9, C10
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C17
15 pF Chip Capacitor
08051J150GBS
AVX
C18
0.5 pF Chip Capacitor
08051J0R5BBS
AVX
C19
1.5 pF Chip Capacitor
08051J1R5BBS
AVX
C20
1 pF Chip Capacitor
08051J1R0BBS
AVX
C21
0.4 pF Chip Capacitor
08051J0R4BBS
AVX
L1
5.6 nH Inductor
LL1608--FH5N6S
TOKO
L2
6.8 nH Inductor
LL1608--FH6N8S
TOKO
Q1
Power FET GaAs Transistor
MRFG35010ANT1
Freescale
R1
75 , 1/8 W Chip Resistor
ERJ--6GEYJ750V
Panasonic
PCB
0.020, r = 3.5
RO4350B
Rogers
MRFG35010ANT1
16
RF Device Data
Freescale Semiconductor, Inc.
VGG
+
C9
C8
C7
C6
C5
C14
C4
C13
C12
C11
+
C10
VDD
C15
C3
C16
R1
Z9
L2
L1
RF
INPUT
Z1
Z2
C1
Z3
C18
Z4
C19
Z6
Z7
Z8
Z10
Z11
Z5
RF
OUTPUT
Z13
Z12
Z14
Z15
C20
Z16
C17
Z17
C21
Figure 23. MRFG35010ANT1 Test Circuit Schematic — 2650 MHz
Table 13. MRFG35010ANT1 Test Circuit Microstrips — 2650 MHz
Microstrip
Description
Microstrip
Description
Z1
0.045 x 0.295 Microstrip
Z9
0.045 x 0.098 Microstrip
Z2
0.045 x 0.385 Microstrip
Z11
0.200 x 0.040 Microstrip
Z3
0.045 x 0.077 Microstrip
Z12
0.260 x 0.020 Microstrip
Z4
0.045 x 0.273 Microstrip
Z13
0.200 x 0.632 Microstrip
Z5
0.105 x 0.045 Microstrip
Z14
0.045 x 0.348 Microstrip
Z6
0.045 x 0.023 Microstrip
Z15
0.045 x 0.075 Microstrip
Z7
0.450 x 0.312 Microstrip
Z16
0.045 x 0.150 Microstrip
Z8, Z10
0.146 x 0.070 Microstrip
Z17
0.045 x 0.152 Microstrip
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
17
TYPICAL CHARACTERISTICS — 2650 MHz
10
20
VDD = 12 Vdc, IDQ = 130 mA, 25C
S11, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
15
10
5
0
--5
--10
VDD = 12 Vdc, IDQ = 130 mA, 25C
5
0
--5
--10
--15
--20
--25
--15
--20
500
1000
1500
2000
2500
3000
--30
500
3500
1000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 24. Small--Signal Gain versus Frequency
Figure 25. Input Return Loss versus Frequency
S22, OUTPUT RETURN LOSS (dB)
10
VDD = 12 Vdc, IDQ = 130 mA, 25C
5
0
--5
--10
--15
--20
--25
--30
500
1000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
Figure 26. Output Return Loss versus Frequency
MRFG35010ANT1
18
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2650 MHZ
16
Gps, POWER GAIN (dB)
60
VDD = 12 Vdc, IDQ = 130 mA, f = 2650 MHz
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01%
Probability (CCDF)
14
50
40
12
30
Gps
20
10
D
8
D, DRAIN EFFICIENCY (%)
18
10
6
20
25
30
35
0
40
Pout, OUTPUT POWER (dBm)
--10
VDD = 12 Vdc, IDQ = 140 mA, f = 2650 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--20
--30
--5
--10
--15
IRL
--20
--40
--50
--25
ACPR
--60
20
25
30
35
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 27. Single--Carrier W--CDMA Power Gain
and Drain Efficiency versus Output Power
--30
40
Pout, OUTPUT POWER (dBm)
Figure 28. Single--Carrier W--CDMA ACPR and
Input Return Loss versus Output Power
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
19
0.146
3.71
0.095
2.41
0.115
2.92
0.115
2.92
0.020
0.51
inches
mm
Figure 29. PLD--1.5 Solder Footprint
M10A
N B
YYWW
Figure 30. Product Marking
MRFG35010ANT1
20
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
21
MRFG35010ANT1
22
RF Device Data
Freescale Semiconductor, Inc.
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
23
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
 RF High Power Model
Development Tools
 Printed Circuit Boards
Reference Designs
 W--CDMA Reference Design for 2.4--2.5 GHz, 900 mW MRFG35010ANT1 Device
 725--760 MHz, 1.0 W AVG., 12 V LTE Amplifier Lineup Reference Design
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
 Initial Release of Data Sheet
1
Dec. 2008
 Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
 Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables
2
June 2009
 Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
3
Dec. 2012
 Added Typical Performance table, p. 1
 Table 3, ESD Protection Characteristics, removed the word ”Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 1.
 Added Figs. 8, 15 and 22, Test Circuit Component Layout — 750 MHz, 2140 MHz and 2650 MHz, and
Tables 8, 10 and 12, Test Circuit Component Designations and Values — 750 MHz, 2140 MHz and
2650 MHz, p. 8, 12 and 16
 Added Figs. 9, 16 and 23, Test Circuit Schematic — 750 MHz, 2140 MHz and 2650 MHz, and Tables 9, 11
and 13, Test Circuit Microstrips — 750 MHz, 2140 MHz and 2650 MHz, p. 9, 13 and 17
 Added Figs. 10, 17 and 24, Small--Signal Gain versus Frequency — 750 MHz, 2140 MHz and 2650 MHz,
Figs. 11, 18 and 25, Input Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, and
Figs. 12, 19 and 26, Output Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, p. 10,
14 and 18
 Added Figs. 13, 20 and 27, Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output
Power — 750 MHz, 2140 MHz and 2650 MHz, and Figs. 14, 21 and 28, Single--Carrier W--CDMA ACPR
and Input Return Loss versus Output Power — 750 MHz, 2140 MHz and 2650 MHz, p. 11, 15 and 19
4
Aug. 2013
 Modified data sheet to reflect tape and reel changes for PLD--1.5 package devices as described in Product
and Process Change Notification number, PCN14498, p. 1
 Updated Fig. 1, MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz, to current test circuit
component layout for MRFG35010ANT1 part, p. 3
MRFG35010ANT1
24
RF Device Data
Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E 2006, 2008--2009, 2012--2013 Freescale Semiconductor, Inc.
MRFG35010ANT1
Document
Number:
RF Device
DataMRFG35010AN
Rev.
4, 8/2013Semiconductor, Inc.
Freescale
25