Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB customer premise equipment (CPE) applications. Typical Single--Carrier W--CDMA Performance: VDD = 12 Vdc, IDQ = 130 mA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Frequency (MHz) Pout (W) Gps (dB) ACPR (dBc) D (%) IRL (dB) 750 1 14.5 --44.0 24.0 --15 2140 1 13.0 --43.0 25.0 --14 2650 1 11.5 --43.0 30.0 --15 500--5000 MHz, 9 W, 12 V POWER FET GaAs pHEMT Features 9 Watts P1dB @ 3550 MHz, CW Excellent Phase Linearity and Group Delay Characteristics High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel. PLD--1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 15 Vdc Gate--Source Voltage VGS --5 Vdc RF Input Power Pin 33 dBm Storage Temperature Range Tstg --65 to +150 C Channel Temperature (1) Tch 175 C Symbol Value (2) Unit RJC 6.5 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 1 W CW Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2006, 2008--2009, 2012--2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRFG35010ANT1 1 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 2.9 — Adc Off State Leakage Current (VGS = --0.4 Vdc, VDS = 0 Vdc) IGSS — <1 100 Adc Off State Drain Current (VDS = 12 Vdc, VGS = --2.2 Vdc) IDSO — 0.1 1 mAdc Off State Current (VDS = 28.5 Vdc, VGS = --2.5 Vdc) IDSX — 2 15 mAdc Gate--Source Cut--off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) --1.2 --1.0 --0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) VGS(Q) --1.2 --0.95 --0.7 Vdc Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f = 3550 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 9 10 — dB Drain Efficiency ηD 23 25 — % ACPR — --43 --40 dBc — W Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB — 9 MRFG35010ANT1 2 RF Device Data Freescale Semiconductor, Inc. C11 C10 C9 C14 C8 C15 C7 C16 C13 C12 C17 C6 C18 C5 C19 R1 C4 C20 C3 C1 C2 C22 C21 MRFG35010AN Rev. 6 3500MHz -- 3600MHz Figure 1. MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz Table 6. MRFG35010ANT1 Test Circuit Component Designations and Values — 3550 MHz Part Description Part Number Manufacturer C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX C5, C18 10 pF Chip Capacitors ATC100A100JP150XT ATC C6, C17 100 pF Chip Capacitors ATC100A101JP150XT ATC C7, C16 100 pF Chip Capacitors ATC100B101JP500XT ATC C8, C15 1000 pF Chip Capacitors ATC100B102JP50XT ATC C9, C14 0.1 F Chip Capacitors CDR33BX104AKWS Kemet C10, C13 39K pF Chip Capacitors ATC200B393KP50XT ATC C11, C12 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1 50 Chip Resistor P51ETR--ND Newark PCB 0.020, r = 3.5 RO4350B Rogers MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 3 VGG VDD C11 C10 C9 C8 C7 C6 C5 C18 C4 C17 C16 C15 C14 C13 C12 C19 Z9 Z12 R1 RF INPUT RF OUTPUT Z1 Z2 Z3 Z5 Z4 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 C20 C3 C1 Z17 Z16 C2 C22 C21 Figure 2. MRFG35010ANT1 Test Circuit Schematic — 3550 MHz Table 7. MRFG35010ANT1 Test Circuit Microstrips — 3550 MHz Microstrip Description Microstrip Description Z1 0.045 x 0.689 Microstrip Z9 0.025 x 0.485 Microstrip Z2 0.045 x 0.089 Microstrip Z11 0.400 x 0.215 Microstrip Z3 0.020 x 0.360 Microstrip Z12 0.025 x 0.497 Microstrip Z4 0.045 x 0.029 Microstrip Z13 0.025 x 0.271 Microstrip Z5 0.045 x 0.061 Microstrip Z14 0.025 x 0.363 Microstrip Z6 0.045 x 0.055 Microstrip Z15 0.025 x 0.041 Microstrip Z7 0.300 x 0.125 Microstrip Z16 0.045 x 0.050 Microstrip Z8, Z10 0.146 x 0.070 Microstrip Z17 0.045 x 0.467 Microstrip MRFG35010ANT1 4 RF Device Data Freescale Semiconductor, Inc. 12 50 10 40 6 4 2 GT VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth S = 0.875 --131.0_ L = 0.849 --145.8_ 8 20 10 D 10 15 30 20 25 30 35 D, DRAIN EFFICIENCY (%) GT, TRANSDUCER GAIN (dB) TYPICAL CHARACTERISTICS — 3550 MHz 0 40 Pout, OUTPUT POWER (dBm) --10 VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth S = 0.875 --131.0_, L = 0.849 --145.8_ --20 --10 --15 IRL --30 --20 --40 --25 --50 --30 ACPR --60 15 20 25 30 35 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 3. Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output Power --35 40 Pout, OUTPUT POWER (dBm) Figure 4. Single--Carrier W--CDMA ACPR and Input Return Loss versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 3550 MHz 12 Gps, POWER GAIN (dB) 60 VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 10 50 40 Gps 8 30 6 20 D 4 10 2 20 28 24 D, DRAIN EFFICIENCY (%) 14 32 36 0 40 Pout, OUTPUT POWER (dBm) --10 --5 VDD = 12 Vdc, IDQ = 140 mA, f = 3550 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --20 --30 --10 --15 IRL --20 --40 --50 --25 ACPR --60 20 25 30 35 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 5. Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output Power --30 40 Pout, OUTPUT POWER (dBm) Figure 6. Single--Carrier W--CDMA ACPR and Input Return Loss versus Output Power NOTE: Data is generated from the test circuit shown. MRFG35010ANT1 6 RF Device Data Freescale Semiconductor, Inc. Zo = 25 Zload Zsource f = 3550 MHz f = 3550 MHz VDD = 12 Vdc, IDQ = 130 mA, Pout = 1 W Avg. f MHz Zsource Zload 3550 4.0 -- j22.6 4.5 -- j15.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 7. Series Equivalent Source and Load Impedance — 3550 MHz MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 7 --VGG +VDD C8 C7 C12 C11 C9 C6 C13 C5 C14 C4 C3 C15 C16 R1 C1 L2 L1 C20 C10 C19 Q1 C2 R2 C18 C17 C21 MRFG35010AN Rev. 2 700MHz -- 900MHz Figure 8. MRFG35010ANT1 Test Circuit Component Layout — 750 MHz Table 8. MRFG35010ANT1 Test Circuit Component Designations and Values — 750 MHz Part Description Part Number Manufacturer C1, C19 100 pF Chip Capacitors ATC600F101JT250XT ATC C2 10 pF Chip Capacitor ATC600F100JT250XT ATC C3, C16 10 pF Chip Capacitors ATC100A100JP150XT ATC C4, C15 100 pF Chip Capacitors ATC100A101JP150XT ATC C5, C14 100 pF Chip Capacitors ATC100B101JP500XT ATC C6, C13 1000 pF Chip Capacitors ATC100B102JP50XT ATC C7, C12 0.1 F Chip Capacitors CDR33BX104AKWS AVX C8, C11 39K pF Chip Capacitors ATC200B393KP500XT ATC C9, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C17 1.8 pF Chip Capacitor ATC600F1R8BT250XT ATC C18 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC C20 22 pF Chip Capacitor ATC600F220JT250XT ATC C21 1 pF Chip Capacitor ATC600F1R0BT250XT ATC L1, L2 18 nH Chip Inductors LL1608--FSL18NJ TOKO Q1 Power FET GaAs Transistor MRFG35010ANT1 Freescale R1 51 , 1/10 W Chip Resistor RM73B1JT510J KOA Speer R2 4.7 , 1/10 W Chip Resistor CR10--4R7J--T Kyocera PCB 0.020, r = 3.5 RO4350B Rogers MRFG35010ANT1 8 RF Device Data Freescale Semiconductor, Inc. VGG + C9 C8 C7 C6 C5 C14 RF INPUT C12 C11 Z2 C1 Z3 Z4 Z5 C2 R2 VDD C16 Z8 R1 Z11 L1 L2 RF OUTPUT C20 Z1 + C10 C15 C4 C3 C13 Z6 Z7 Z9 Z10 C21 Z12 Z13 C17 Z14 C18 Z15 C19 Figure 9. MRFG35010ANT1 Test Circuit Schematic — 750 MHz Table 9. MRFG35010ANT1 Test Circuit Microstrips — 750 MHz Microstrip Description Microstrip Description Z1 0.045 x 0.633 Microstrip Z8 0.025 x 0.155 Microstrip Z2 0.045 x 0.044 Microstrip Z10 0.325 x 0.255 Microstrip Z3 0.045 x 0.422 Microstrip Z11 0.025 x 0.168 Microstrip Z4 0.090 x 0.030 Microstrip Z12 0.045 x 0.080 Microstrip Z5 0.110 x 0.050 Microstrip Z13 0.045 x 0.600 Microstrip Z6 0.285 x 0.200 Microstrip Z14 0.045 x 0.089 Microstrip Z7, Z9 0.146 x 0.070 Microstrip Z15 0.045 x 0.400 Microstrip MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS — 750 MHz 10 20 VDD = 12 Vdc, IDQ = 130 mA, 25C S11, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 15 10 5 0 --5 --10 VDD = 12 Vdc, IDQ = 130 mA, 25C 5 0 --5 --10 --15 --20 --25 --15 --20 500 1000 1500 2000 2500 3000 --30 500 3500 1000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 10. Small--Signal Gain versus Frequency Figure 11. Input Return Loss versus Frequency S22, OUTPUT RETURN LOSS (dB) 10 VDD = 12 Vdc, IDQ = 130 mA, 25C 5 0 --5 --10 --15 --20 --25 --30 500 1000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) Figure 12. Output Return Loss versus Frequency MRFG35010ANT1 10 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 750 MHz 16 Gps, POWER GAIN (dB) 60 VDD = 12 Vdc, IDQ = 130 mA, f = 750 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01%Probability (CCDF) 14 50 40 Gps 12 30 20 10 D 8 10 6 20 D, DRAIN EFFICIENCY (%) 18 25 30 35 0 40 Pout, OUTPUT POWER (dBm) --10 VDD = 12 Vdc, IDQ = 130 mA, f = 750 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --20 --5 --10 --15 --30 IRL --20 --40 ACPR --50 --25 --60 20 25 30 35 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 13. Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output Power --30 40 Pout, OUTPUT POWER (dBm) Figure 14. Single--Carrier W--CDMA ACPR and Input Return Loss versus Output Power MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 11 --VGG +VDD C9 C7 C8 C12 C11 C6 C13 C5 C14 C4 C15 C16 C3 R1 C1 C10 C17 L2 L1 Q1 RF IN C2 RF OUT C18 MRFG35010AN Rev. 0 2100MHz -- 2200MHz Figure 15. MRFG35010ANT1 Test Circuit Component Layout — 2140 MHz Table 10. MRFG35010ANT1 Test Circuit Component Designations and Values — 2140 MHz Part Description Part Number Manufacturer C1 4.7 pF Chip Capacitor 080514R7BBS AVX C2 0.5 pF Chip Capacitor 08051J0R5BBS AVX C3, C16 10 pF Chip Capacitors ATC100A100JP150XT ATC C4, C15 100 pF Chip Capacitors ATC100A101JP150XT ATC C5, C14 100 pF Chip Capacitors ATC100B101JP500XT ATC C6, C13 1000 pF Chip Capacitors ATC100B102JP50XT ATC C7, C12 0.1 F Chip Capacitors CDR33BX104AKWS AVX C8, C11 39K pF Chip Capacitors ATC200B393KP500XT ATC C9, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C17 15 pF Chip Capacitor 08051J150GBS AVX C18 1.5 pF Chip Capacitor 08051J1R5BBS AVX L1 3.9 nH Inductor LL1608--FH3N9S TOKO L2 8.2 nH Inductor LL1608--FH8N2S TOKO Q1 Power FET GaAs Transistor MRFG35010ANT1 Freescale R1 75 , 1/8 W Chip Resistor ERJ--6GEYJ750V Panasonic PCB 0.020, r = 3.5 RO4350B Rogers MRFG35010ANT1 12 RF Device Data Freescale Semiconductor, Inc. VGG + C9 C8 C7 C6 C5 C14 C13 C12 C11 + C10 VDD C15 C4 C3 C16 R1 Z8 L2 L1 RF INPUT Z1 Z2 C1 Z3 C2 Z5 Z4 Z6 Z7 Z9 Z10 RF OUTPUT Z12 Z13 Z11 C18 Z14 C19 Figure 16. MRFG35010ANT1 Test Circuit Schematic — 2140 MHz Table 11. MRFG35010ANT1 Test Circuit Microstrips — 2140 MHz Microstrip Z1, Z14 Description 0.045 x 0.295 Microstrip Microstrip Description Z7, Z9 0.146 x 0.070 Microstrip Z2 0.045 x 0.224 Microstrip Z8 0.045 x 0.098 Microstrip Z3 0.045 x 0.515 Microstrip Z10 0.200 x 0.040 Microstrip Z4 0.105 x 0.045 Microstrip Z11 0.260 x 0.020 Microstrip Z5 0.045 x 0.023 Microstrip Z12 0.200 x 0.632 Microstrip Z6 0.450 x 0.312 Microstrip Z13 0.045 x 0.420 Microstrip MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 13 TYPICAL CHARACTERISTICS — 2140 MHz 10 20 VDD = 12 Vdc, IDQ = 130 mA, 25C S11, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 15 10 5 0 --5 --10 VDD = 12 Vdc, IDQ = 130 mA, 25C 5 0 --5 --10 --15 --20 --25 --15 --20 500 1000 1500 2000 2500 3000 --30 500 3500 1000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. Small--Signal Gain versus Frequency Figure 18. Input Return Loss versus Frequency S22, OUTPUT RETURN LOSS (dB) 10 VDD = 12 Vdc, IDQ = 130 mA, 25C 5 0 --5 --10 --15 --20 --25 --30 500 1000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) Figure 19. Output Return Loss versus Frequency MRFG35010ANT1 14 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2140 MHZ 18 Gps, POWER GAIN (dB) 16 14 50 40 12 30 20 10 D 8 10 6 20 30 25 D, DRAIN EFFICIENCY (%) 60 VDD = 12 Vdc, IDQ = 130 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 35 0 40 Pout, OUTPUT POWER (dBm) --10 VDD = 12 Vdc, IDQ = 140 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --20 --30 ----5 --10 --15 IRL --20 --40 ACPR --25 --50 --60 20 25 30 35 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 20. Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output Power --30 40 Pout, OUTPUT POWER (dBm) Figure 21. Single--Carrier W--CDMA ACPR and Input Return Loss versus Output Power MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 15 +VDD --VGG C7 C8 C9 C12 C11 C6 C13 C5 C14 C4 C15 C16 C3 R1 C18 C1 L1 C10 C17 L2 C21 Q1 RF IN C2* C20 C19 RF OUT MRFG35010AN Rev. 0 2600MHz -- 2700MHz Note: Component number C2* is labeled on board but not placed. Figure 22. MRFG35010ANT1 Test Circuit Component Layout — 2650 MHz Table 12. MRFG35010ANT1 Test Circuit Component Designations and Values — 2650 MHz Part Description C1 4.7 pF Chip Capacitor C2 Component Not Placed C3, C16 C4, C15 Part Number Manufacturer 080514R7BBS AVX 10 pF Chip Capacitors ATC100A100JP150XT ATC 100 pF Chip Capacitors ATC100A101JP150XT ATC C5, C14 100 pF Chip Capacitors ATC100B101JP500XT ATC C6, C13 1000 pF Chip Capacitors ATC100B102JP50XT ATC C7, C12 0.1 F Chip Capacitors CDR33BX104AKWS AVX C8, C11 39K pF Chip Capacitors ATC200B393KP500XT ATC C9, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C17 15 pF Chip Capacitor 08051J150GBS AVX C18 0.5 pF Chip Capacitor 08051J0R5BBS AVX C19 1.5 pF Chip Capacitor 08051J1R5BBS AVX C20 1 pF Chip Capacitor 08051J1R0BBS AVX C21 0.4 pF Chip Capacitor 08051J0R4BBS AVX L1 5.6 nH Inductor LL1608--FH5N6S TOKO L2 6.8 nH Inductor LL1608--FH6N8S TOKO Q1 Power FET GaAs Transistor MRFG35010ANT1 Freescale R1 75 , 1/8 W Chip Resistor ERJ--6GEYJ750V Panasonic PCB 0.020, r = 3.5 RO4350B Rogers MRFG35010ANT1 16 RF Device Data Freescale Semiconductor, Inc. VGG + C9 C8 C7 C6 C5 C14 C4 C13 C12 C11 + C10 VDD C15 C3 C16 R1 Z9 L2 L1 RF INPUT Z1 Z2 C1 Z3 C18 Z4 C19 Z6 Z7 Z8 Z10 Z11 Z5 RF OUTPUT Z13 Z12 Z14 Z15 C20 Z16 C17 Z17 C21 Figure 23. MRFG35010ANT1 Test Circuit Schematic — 2650 MHz Table 13. MRFG35010ANT1 Test Circuit Microstrips — 2650 MHz Microstrip Description Microstrip Description Z1 0.045 x 0.295 Microstrip Z9 0.045 x 0.098 Microstrip Z2 0.045 x 0.385 Microstrip Z11 0.200 x 0.040 Microstrip Z3 0.045 x 0.077 Microstrip Z12 0.260 x 0.020 Microstrip Z4 0.045 x 0.273 Microstrip Z13 0.200 x 0.632 Microstrip Z5 0.105 x 0.045 Microstrip Z14 0.045 x 0.348 Microstrip Z6 0.045 x 0.023 Microstrip Z15 0.045 x 0.075 Microstrip Z7 0.450 x 0.312 Microstrip Z16 0.045 x 0.150 Microstrip Z8, Z10 0.146 x 0.070 Microstrip Z17 0.045 x 0.152 Microstrip MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 17 TYPICAL CHARACTERISTICS — 2650 MHz 10 20 VDD = 12 Vdc, IDQ = 130 mA, 25C S11, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 15 10 5 0 --5 --10 VDD = 12 Vdc, IDQ = 130 mA, 25C 5 0 --5 --10 --15 --20 --25 --15 --20 500 1000 1500 2000 2500 3000 --30 500 3500 1000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 24. Small--Signal Gain versus Frequency Figure 25. Input Return Loss versus Frequency S22, OUTPUT RETURN LOSS (dB) 10 VDD = 12 Vdc, IDQ = 130 mA, 25C 5 0 --5 --10 --15 --20 --25 --30 500 1000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) Figure 26. Output Return Loss versus Frequency MRFG35010ANT1 18 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2650 MHZ 16 Gps, POWER GAIN (dB) 60 VDD = 12 Vdc, IDQ = 130 mA, f = 2650 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 14 50 40 12 30 Gps 20 10 D 8 D, DRAIN EFFICIENCY (%) 18 10 6 20 25 30 35 0 40 Pout, OUTPUT POWER (dBm) --10 VDD = 12 Vdc, IDQ = 140 mA, f = 2650 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --20 --30 --5 --10 --15 IRL --20 --40 --50 --25 ACPR --60 20 25 30 35 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 27. Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output Power --30 40 Pout, OUTPUT POWER (dBm) Figure 28. Single--Carrier W--CDMA ACPR and Input Return Loss versus Output Power MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 19 0.146 3.71 0.095 2.41 0.115 2.92 0.115 2.92 0.020 0.51 inches mm Figure 29. PLD--1.5 Solder Footprint M10A N B YYWW Figure 30. Product Marking MRFG35010ANT1 20 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 21 MRFG35010ANT1 22 RF Device Data Freescale Semiconductor, Inc. MRFG35010ANT1 RF Device Data Freescale Semiconductor, Inc. 23 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File RF High Power Model Development Tools Printed Circuit Boards Reference Designs W--CDMA Reference Design for 2.4--2.5 GHz, 900 mW MRFG35010ANT1 Device 725--760 MHz, 1.0 W AVG., 12 V LTE Amplifier Lineup Reference Design For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2006 Initial Release of Data Sheet 1 Dec. 2008 Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables 2 June 2009 Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 3 Dec. 2012 Added Typical Performance table, p. 1 Table 3, ESD Protection Characteristics, removed the word ”Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 1. Added Figs. 8, 15 and 22, Test Circuit Component Layout — 750 MHz, 2140 MHz and 2650 MHz, and Tables 8, 10 and 12, Test Circuit Component Designations and Values — 750 MHz, 2140 MHz and 2650 MHz, p. 8, 12 and 16 Added Figs. 9, 16 and 23, Test Circuit Schematic — 750 MHz, 2140 MHz and 2650 MHz, and Tables 9, 11 and 13, Test Circuit Microstrips — 750 MHz, 2140 MHz and 2650 MHz, p. 9, 13 and 17 Added Figs. 10, 17 and 24, Small--Signal Gain versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, Figs. 11, 18 and 25, Input Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, and Figs. 12, 19 and 26, Output Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, p. 10, 14 and 18 Added Figs. 13, 20 and 27, Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output Power — 750 MHz, 2140 MHz and 2650 MHz, and Figs. 14, 21 and 28, Single--Carrier W--CDMA ACPR and Input Return Loss versus Output Power — 750 MHz, 2140 MHz and 2650 MHz, p. 11, 15 and 19 4 Aug. 2013 Modified data sheet to reflect tape and reel changes for PLD--1.5 package devices as described in Product and Process Change Notification number, PCN14498, p. 1 Updated Fig. 1, MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz, to current test circuit component layout for MRFG35010ANT1 part, p. 3 MRFG35010ANT1 24 RF Device Data Freescale Semiconductor, Inc. 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All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2006, 2008--2009, 2012--2013 Freescale Semiconductor, Inc. MRFG35010ANT1 Document Number: RF Device DataMRFG35010AN Rev. 4, 8/2013Semiconductor, Inc. Freescale 25