Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFG35005AN
Rev. 2, 6/2009
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
MRFG35005ANT1
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ =
80 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 11 dB
Drain Efficiency — 26%
ACPR @ 5 MHz Offset — - 44 dBc in 3.84 MHz Channel Bandwidth
• 4.5 Watts P1dB @ 3550 MHz, CW
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
15
Vdc
Gate- Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
30
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Symbol
Value (2)
Unit
RθJC
13.7
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35005ANT1
1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
1.7
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
<1
100
μAdc
Off State Drain Current
(VDS = 12 Vdc, VGS = - 2.5 Vdc)
IDSO
—
1
600
μAdc
Off State Current
(VDS = 28.5 Vdc, VGS = - 2.5 Vdc)
IDSX
—
<1
9
mAdc
Gate- Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 8.7 mA)
VGS(th)
- 1.2
- 0.95
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 12 Vdc, ID = 105 mA)
VGS(Q)
- 1.1
- 0.85
- 0.6
Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mWatts Avg., f = 3550 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
10
11
—
dB
Drain Efficiency
hD
22
26
—
%
ACPR
—
- 44
- 39
dBc
—
W
Adjacent Channel Power Ratio
Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz
Output Power, 1 db Compression Point, CW
P1dB
—
4.5
MRFG35005ANT1
2
RF Device Data
Freescale Semiconductor
C8
C18
VBIAS
VSUPPLY
C11
C10
C9
C7
C17
C6
C16
C19
C20
C21
C22
C5
R1
C3
C4
C14
C15
Z15
Z5
RF
INPUT
C2
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
Z10
C12
C13
Z11
Z12 Z13
RF
OUTPUT
C23
Z14 Z16 Z17
C1
Z18
Z19
C24
C29
Z1, Z19
Z2
Z3
Z4
Z5, Z15
Z6, Z8, Z10
Z7, Z9
Z11
C28
0.044″ x 0.125″ Microstrip
0.044″ x 0.435″ Microstrip
0.254″ x 0.298″ Microstrip
0.590″ x 0.336″ Microstrip
0.015″ x 0.527″ Microstrip
0.025″ x 0.050″ Microstrip
0.025″ x 0.125″ Microstrip
0.081″ x 0.400″ Microstrip
C27
C26
Z12
Z13
Z14
Z16
Z17
Z18
PCB
C25
0.408″ x 0.120″ Microstrip
0.174″ x 0.259″ Microstrip
0.348″ x 0.269″ Microstrip
0.110″ x 0.075″ Microstrip
0.110″ x 0.240″ Microstrip
0.044″ x 0.387″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 1. MRFG35005AN Test Circuit Schematic
Table 6. MRFG35005AN Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C24
7.5 pF Chip Capacitors
ATC100A7R5JT150XT
ATC
C2
0.4 pF Chip Capacitor
08051J0R4BBS
AVX
C3, C4, C14, C15
3.9 pF Chip Capacitors
08051J3R9BBS
AVX
C5, C16
10 pF Chip Capacitors
ATC100A100JT150XT
ATC
C6, C17
100 pF Chip Capacitors
ATC100A101JT150XT
ATC
C7, C18
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C8, C19
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C9, C20
39K pF Chip Capacitors
ATC200B393KT50XT
ATC
C10, C21
0.01 μF Chip Capacitors
ATC200B103KT50XT
ATC
C11, C22
10 μF Chip Capacitors
GRM55DR61H106KA88B
Murata
C12, C28
0.1 pF Chip Capacitors
08051J0R1BBS
AVX
C13, C26
0.3 pF Chip Capacitors
08051J0R3BBS
AVX
C23
1.0 pF Chip Capacitor
08051J1R0BBS
AVX
C25
1.2 pF Chip Capacitor
08051J1R2BBS
AVX
C27
0.2 pF Chip Capacitor
08051J0R2BBS
AVX
C29
0.8 pF Chip Capacitor
08051J0R8BBS
AVX
R1
100 Ω, 1/4 W Chip Resistor
CRCW12061000FKTA
Vishay
MRFG35005ANT1
RF Device Data
Freescale Semiconductor
3
VG−
C10 C9
C11
C8
C7
C6
C5
C19 C20 C21
C18
C17
R1
C3
VD+
C22
C16
C14
C4
C12
C15
C13
C23
C1
C2
C28
C29
C25
C27
C24
C26
MRFG35005AN
Rev. 3
Figure 2. MRFG35005AN Test Circuit Component Layout
MRFG35005ANT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
60
VDS = 12 Vdc, IDQ = 80 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
ΓS = 0.852é−115.6_, ΓL = 0.737é−146.1_
50
Gps
10
40
8
30
20
6
ηD
4
10
2
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
12
0
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
−5
−10
VDS = 12 Vdc, IDQ = 80 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
ΓS = 0.852é−115.6_, ΓL = 0.737é−146.1_
−20
−10
IRL
−30
−15
−40
−20
ACPR
−50
−25
−60
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 3. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Output Power
−30
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35005ANT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
14
60
VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
50
Gps
10
40
8
30
20
6
ηD
4
10
2
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
12
0
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
0
0
VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
−10
−10
−20
−20
IRL
−30
−30
−40
−40
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 5. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR
−50
−50
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 6. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
14
32
30
10
Gps
8
28
26
6
ηD
4
24
2
3450
3500
3550
3600
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
12
34
VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
22
3650
f, FREQUENCY (MHz)
Figure 7. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Frequency
NOTE: Data is generated from the test circuit shown.
MRFG35005ANT1
6
RF Device Data
Freescale Semiconductor
0
0
VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
−10
−5
−20
−10
−30
−15
IRL
−40
−20
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
ACPR
−50
3450
3500
3550
−25
3650
3600
f, FREQUENCY (MHz)
Figure 8. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Frequency
60
VDD = 12 Vdc, IDQ = 80 mA, f = 3550 MHz
Single−Carrier OFDM 802.16d, 64 QAM 3/4
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
−10
50
−15
40
−20
30
20
−25
ηD
−30
10
ηD, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (dB)
−5
EVM
−35
0
18
20
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 9. Single - Channel OFDM Error Vector
Magnitude and Drain Efficiency versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35005ANT1
RF Device Data
Freescale Semiconductor
7
Zo = 50 Ω
Zload
f = 3550 MHz
Zsource
f = 3550 MHz
VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Avg.
f
MHz
Zsource
W
Zload
W
3550
5.6 - j31.2
8.3 - j14.8
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRFG35005ANT1
8
RF Device Data
Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 12 Vdc, IDQ = 80 mA, TA = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.916
- 175.6
6.446
82.2
0.029
0.7
0.653
- 175.5
550
0.916
- 177.4
5.893
80.3
0.029
0.1
0.652
- 176.7
600
0.916
- 178.9
5.422
78.4
0.029
- 1.2
0.651
- 177.9
650
0.916
179.7
5.028
76.7
0.029
- 2.2
0.649
- 179.1
700
0.916
178.5
4.693
75.0
0.029
- 3.0
0.648
179.7
750
0.916
177.4
4.405
73.3
0.029
- 4.0
0.646
178.6
800
0.916
176.4
4.153
71.7
0.029
- 4.7
0.645
177.5
850
0.915
175.5
3.931
70.1
0.029
- 5.4
0.644
176.4
900
0.916
174.7
3.729
68.5
0.029
- 6.1
0.643
175.3
950
0.916
174.0
3.548
67.0
0.029
- 6.8
0.642
174.2
1000
0.914
173.3
3.381
65.4
0.030
- 7.3
0.640
173.1
1050
0.915
172.6
3.236
64.0
0.030
- 8.0
0.640
171.9
1100
0.915
172.0
3.097
62.5
0.030
- 8.7
0.640
170.8
1150
0.915
171.4
2.974
61.1
0.030
- 9.3
0.639
169.8
1200
0.915
170.8
2.861
59.6
0.030
- 9.9
0.639
168.8
1250
0.914
170.1
2.757
58.2
0.030
- 10.7
0.639
167.7
1300
0.913
169.6
2.661
56.7
0.030
- 11.2
0.638
166.8
1350
0.913
168.9
2.572
55.3
0.030
- 11.8
0.638
166.0
1400
0.913
168.1
2.488
53.8
0.030
- 12.4
0.639
165.1
1450
0.913
167.3
2.412
52.4
0.030
- 13.1
0.639
164.2
1500
0.911
166.4
2.341
50.9
0.030
- 13.8
0.639
163.5
1550
0.910
163.1
2.292
49.2
0.031
- 14.7
0.636
164.9
1600
0.909
162.3
2.229
47.8
0.031
- 15.3
0.635
164.2
1650
0.909
161.5
2.170
46.3
0.031
- 16.1
0.635
163.4
1700
0.909
160.7
2.113
44.9
0.031
- 16.5
0.636
162.6
1750
0.908
159.9
2.060
43.4
0.031
- 17.2
0.636
161.8
1800
0.908
159.1
2.009
42.0
0.031
- 17.7
0.636
161.0
1850
0.907
158.3
1.960
40.5
0.031
- 18.3
0.636
160.2
1900
0.908
157.6
1.915
39.1
0.031
- 19.0
0.637
159.4
1950
0.908
156.8
1.871
37.7
0.031
- 19.8
0.638
158.6
2000
0.907
156.1
1.829
36.2
0.031
- 20.3
0.638
157.8
2050
0.908
155.3
1.791
34.8
0.031
- 21.1
0.638
157.0
2100
0.907
154.5
1.754
33.4
0.031
- 21.7
0.638
156.2
2150
0.912
153.6
1.721
31.9
0.031
- 22.3
0.642
155.3
2200
0.907
153.1
1.688
30.5
0.032
- 22.8
0.639
154.8
2250
0.907
152.2
1.657
29.0
0.032
- 23.6
0.638
154.0
2300
0.906
151.3
1.629
27.6
0.032
- 24.2
0.638
153.1
2350
0.905
150.5
1.603
26.1
0.032
- 24.8
0.637
152.3
2400
0.906
149.6
1.579
24.6
0.032
- 25.7
0.637
151.6
2450
0.904
148.7
1.557
23.1
0.032
- 26.6
0.635
150.7
2500
0.903
147.8
1.536
21.6
0.032
- 27.4
0.634
149.9
2550
0.903
146.8
1.518
20.1
0.033
- 27.9
0.633
149.2
2600
0.900
145.8
1.500
18.5
0.033
- 28.5
0.630
148.3
2650
0.901
144.8
1.483
17.0
0.033
- 29.3
0.629
147.5
2700
0.899
143.8
1.469
15.4
0.033
- 30.1
0.627
146.6
2750
0.898
142.7
1.455
13.8
0.034
- 31.0
0.625
145.8
(continued)
MRFG35005ANT1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source S - Parameters (VDD = 12 Vdc, IDQ = 80 mA, TA = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2800
0.897
141.6
1.444
12.3
0.034
- 31.8
0.623
145.0
2850
0.895
140.5
1.433
10.6
0.034
- 32.6
0.619
144.2
2900
0.895
139.3
1.424
9.0
0.034
- 33.4
0.617
143.3
2950
0.893
138.0
1.415
7.4
0.035
- 34.3
0.614
142.4
3000
0.894
136.8
1.407
5.7
0.035
- 35.1
0.612
141.5
3050
0.892
135.5
1.398
4.1
0.036
- 36.1
0.608
140.7
3100
0.890
134.3
1.393
2.4
0.036
- 36.8
0.604
139.7
3150
0.889
133.0
1.386
0.7
0.036
- 37.8
0.601
138.9
3200
0.887
131.6
1.381
- 1.0
0.037
- 38.6
0.598
137.9
3250
0.885
130.3
1.376
- 2.7
0.037
- 39.7
0.594
136.9
3300
0.884
128.9
1.372
- 4.5
0.038
- 40.7
0.590
135.9
3350
0.883
127.5
1.368
- 6.2
0.038
- 41.7
0.586
134.9
3400
0.882
126.1
1.365
- 7.9
0.039
- 42.8
0.583
133.9
3450
0.881
124.6
1.361
- 9.7
0.039
- 43.8
0.580
132.9
3500
0.878
123.1
1.358
- 11.5
0.040
- 45.0
0.576
131.9
3550
0.877
121.7
1.354
- 13.2
0.040
- 46.0
0.572
130.9
3600
0.876
120.2
1.351
- 15.0
0.040
- 47.2
0.568
129.8
3650
0.875
118.6
1.349
- 16.8
0.041
- 48.1
0.565
128.7
3700
0.873
117.2
1.346
- 18.6
0.041
- 48.9
0.561
127.6
3750
0.871
115.6
1.343
- 20.4
0.042
- 50.0
0.558
126.4
3800
0.870
114.1
1.341
- 22.3
0.042
- 51.0
0.555
125.3
3850
0.868
112.5
1.339
- 24.1
0.042
- 52.2
0.551
124.1
3900
0.867
110.9
1.337
- 26.0
0.043
- 53.2
0.548
122.9
3950
0.865
109.3
1.335
- 27.9
0.043
- 54.3
0.545
121.6
4000
0.863
107.7
1.332
- 29.8
0.044
- 55.4
0.541
120.3
4050
0.862
106.0
1.331
- 31.7
0.044
- 56.5
0.538
119.0
4100
0.860
104.2
1.331
- 33.6
0.045
- 57.6
0.535
117.7
4150
0.858
102.4
1.329
- 35.7
0.045
- 58.7
0.532
116.3
4200
0.856
100.6
1.327
- 37.7
0.046
- 60.0
0.528
114.9
4250
0.854
98.7
1.326
- 39.8
0.046
- 61.3
0.526
113.5
4300
0.852
96.8
1.325
- 41.9
0.047
- 62.5
0.523
112.0
4350
0.850
94.9
1.324
- 44.0
0.047
- 63.7
0.519
110.4
4400
0.847
92.8
1.323
- 46.1
0.048
- 65.0
0.516
108.8
4450
0.845
90.7
1.323
- 48.4
0.048
- 66.5
0.513
107.0
4500
0.845
88.5
1.322
- 50.6
0.049
- 67.9
0.509
105.2
4550
0.842
86.1
1.320
- 53.0
0.049
- 69.4
0.506
103.4
4600
0.838
84.2
1.317
- 55.3
0.050
- 70.9
0.502
101.4
4650
0.840
81.6
1.317
- 57.7
0.050
- 72.6
0.498
99.4
4700
0.836
79.3
1.316
- 60.0
0.051
- 73.9
0.494
97.4
4750
0.840
76.9
1.313
- 62.6
0.052
- 75.8
0.490
95.1
4800
0.837
73.9
1.311
- 65.1
0.052
- 77.6
0.486
92.9
4850
0.837
71.4
1.309
- 67.7
0.053
- 79.5
0.482
90.5
4900
0.838
68.5
1.305
- 70.3
0.053
- 81.2
0.478
88.1
4950
0.834
65.9
1.300
- 73.0
0.054
- 83.0
0.474
85.7
5000
0.834
62.9
1.295
- 75.7
0.054
- 85.0
0.470
82.9
MRFG35005ANT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
R
0.115
2.92
0.115
2.92
L
0.020
0.51
4
0.35 (0.89) X 45_" 5 _
N
K
Q
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
C
4
ZONE W
1
2
3
S
G
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
ZONE V
inches
10_DRAFT
CASE 466 - 03
ISSUE D
PLD - 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRFG35005ANT1
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2007
• Initial Release of Data Sheet
1
Dec. 2008
• Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
2
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
MRFG35005ANT1
12
RF Device Data
Freescale Semiconductor
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MRFG35005ANT1
Document
RF
DeviceNumber:
Data MRFG35005AN
Rev. 2, 6/2009
Freescale
Semiconductor
13