Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BGA2011
900 MHz high linear low noise
amplifier
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
FEATURES
BGA2011
PINNING
 Low current, low voltage
PIN
DESCRIPTION
 High linearity
1
RF in
 High power gain
2
VC
 Low noise
3
VS
 Integrated temperature compensated biasing
4
 Control pin for adjustment bias current.
RF out
5, 6
GND
APPLICATIONS
VS
handbook, halfpage
 RF front end
6
5
4
 Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
RF out
DESCRIPTION
BIAS
CIRCUIT
VC
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
1
2
3
Top view
RF in
MBL251
GND
Marking code:A5-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VS
DC supply voltage
IS
DC supply current
CONDITIONS
RF input AC coupled
TYP.
MAX.
UNIT
3
4.5
V
15

mA
IC
DC control current
VC = VS
0.11

mA
|s21|2
insertion power gain
in application circuit, see Fig.2;
f = 900 MHz
19

dB
NF
noise figure
IS = 15 mA; f = 900 MHz
1.7

dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
VS
DC supply voltage
VC
voltage on control pin
CONDITIONS
RF input AC coupled
MAX.
UNIT

4.5
V

VS
V

30
mA

0.25
mA

135
mW
IS
supply current
IC
control current
Ptot
total power dissipation
Tstg
storage temperature
65
+150
C
Tj
operating junction temperature

150
C
2000 Dec 04
forced by DC voltage on RF input
MIN.
Ts  100 C
2
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction
to solder point
VALUE
UNIT
350
K/W
Ptot = 135 mW; Ts  100 C
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 15 mA; f = 900 MHz; Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
IS
supply current
IC
control current
RL IN
return losses input
RL OUT
|s21|2
NF
IP3in
2000 Dec 04
return losses output
insertion power gain
noise figure
input intercept point
CONDITIONS
MIN.
TYP.
MAX.
UNIT
10
15
20
mA

0.11

mA
typical application; see Fig.2

11

dB
high IP3 (see Fig.2; stripline = 0 mm)

11

dB
high IP3 (see Fig.2; stripline = 1.5 mm)

17

dB
typical application; see Fig.2

11

dB
high IP3 (see Fig.2; stripline = 0 mm)

12

dB
high IP3 (see Fig.2; stripline = 1.5 mm)

14

dB
typical application; see Fig.2

15

dB
high IP3 (see Fig.2; stripline = 0 mm)

19

dB
high IP3 (see Fig.2; stripline = 1.5 mm)

16

dB
typical application; see Fig.2;
IS = 15 mA

1.5

dB
high IP3 (see Fig.2; stripline = 0 mm)

1.6

dB
high IP3 (see Fig.2; stripline = 1.5 mm)

1.7

dB
typical application; see Fig.2

2

dBm
high IP3 (see Fig.2; stripline = 0 mm)

4

dBm
high IP3 (see Fig.2; stripline = 1.5 mm)

10

dBm
3
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
APPLICATION INFORMATION
handbook, full pagewidth
VS
VS
VC
VC
C5
C3
C4
BIAS
CIRCUIT
L2
C2
OUT
C1
RF in
RF out
MLD480
IN
SOT363
L1
GND
C6
stripline
Fig.2 Application circuit.
List of components (see Fig.2)
COMPONENT
DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2
multilayer ceramic chip capacitor
100 pF
100 pF
0603
C3, C5
multilayer ceramic chip capacitor
22 nF
22 nF
0603
C4
multilayer ceramic chip capacitor
5.6 pF
5.6 pF
0603
C6
multilayer ceramic chip capacitor

2 x 100 nF
0805
L1
SMD inductor

10 nH
0603
L2
SMD inductor

8.2 nH
0603
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (r = 6.15),
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
2000 Dec 04
4
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
MLD481
30
BGA2011
MLD482
20
handbook, halfpage
handbook, halfpage
IS
(mA)
gain
(dB)
gain
(dB)
s21
IS 2
15
20
20
15
Gmax
10
10
s21 2
IS
10
5
5
0
0
0
0
1000
2000
f (MHz)
3000
0
IC = 15 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 
Fig.3
VC (V)
3
f = 900 MHz; VS = 3 V; PD = 30 dBm.
Insertion gain (s212) and Gmax as
functions of frequency; typical values.
Fig.4
MLD483
20
2
1
Insertion gain and supply current as
functions of control voltage; typical values.
MLD484
15
handbook, halfpage
handbook, halfpage
s 2
21
(dB)
0
IP3in
(dBm)
IP3out
(dBm)
15
10
−5
IP3in
10
IP3out
5
−10
5
0
10−3
10−2
IC (mA)
0
10−1
5
10
IS (mA)
−15
15
VS = VC = 3 V; PD = 30 dBm (both tones); f = 900 MHz; f = 100 kHz.
f = 900 MHz; VS = 4 V; PD = 30 dBm.
Fig.5
2000 Dec 04
Fig.6
Insertion gain as a function of control
current; typical values.
5
Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
MLD485
2
handbook, halfpage
NF
(dB)
1.6
1.2
0.8
0.4
0
10
5
IS (mA)
15
VS = VC = 3 V; f = 900 MHz
Fig.7
Noise figure as a function of supply
current; typical values.
Scattering parameters
VS = VC = 3 V; PD = 30 dBm; Zo = 50 ; Tamb = 25 C
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.553
22.45
16.198
160.5
0.006
76.72
0.115
87.98
200
0.499
42.12
14.354
145.4
0.012
67.53
0.184
113.5
400
0.394
71.44
10.688
124.6
0.018
59.55
0.256
141.2
600
0.331
90.58
8.156
112.2
0.021
58.29
0.283
158.1
800
0.295
104.0
6.512
103.9
0.024
60.91
0.293
170.5
1000
0.276
114.9
5.415
97.72
0.027
64.65
0.298
178.7
1200
0.267
124.2
4.640
93.01
0.032
69.04
0.304
169.5
1400
0.262
134.2
4.112
89.10
0.037
73.22
0.310
162.5
1600
0.270
144.2
3.659
85.21
0.043
75.43
0.311
157.0
1800
0.287
152.7
3.336
82.21
0.049
77.84
0.309
152.7
2000
0.309
159.7
3.045
78.21
0.057
78.60
0.312
150.5
2200
0.339
166.2
2.849
73.94
0.066
77.96
0.304
149.6
2400
0.360
172.0
2.680
69.19
0.076
75.04
0.291
151.4
2600
0.390
175.9
2.511
64.60
0.086
74.92
0.292
149.2
2800
0.398
178.0
2.332
59.20
0.094
69.95
0.278
148.4
3000
0.392
173.9
2.108
56.72
0.099
69.12
0.317
140.0
2000 Dec 04
6
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
0.2
0
180°
0.5
1
2
5
0°
0
3 GHz
100 MHz
900 MHz
−0.2
−5
−0.5
−2
−135°
−45°
−1
MLD486
1.0
−90°
IC = 15 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 
Fig.8 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
500 MHz
100 MHz
20
16
900 MHz
12
8
1.8 GHz
3 GHz
4
180°
0°
−135°
−45°
−90°
MLD487
IC = 15 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 
Fig.9 Common emitter forward transmission coefficient (s21); typical values.
2000 Dec 04
7
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
90°
handbook, full pagewidth
135°
45°
3 GHz
20
16
12
8
4
180°
0°
100 MHz
−135°
−45°
−90°
MLD488
IC = 15 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 
Fig.10 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
3 GHz
180°
0.2
0
0.5
0.2
1
2
5
0°
900 MHz
0
100 MHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MLD489
1.0
−90°
IC = 15 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50 
Fig.11 Common emitter output reflection coefficient (s22); typical values.
2000 Dec 04
8
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2000 Dec 04
REFERENCES
IEC
JEDEC
JEITA
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2000 Dec 04
10
NXP Semiconductors
Product specification
900 MHz high linear low noise amplifier
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2000 Dec 04
BGA2011
11
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provides High Performance Mixed Signal and Standard Product
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2010
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp12
Date of release: 2000 Dec 04