Freescale Semiconductor Technical Data Document Number: MMG3H21NT1 Rev. 3, 9/2014 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3H21NT1 Broadband High Linearity Amplifier The MMG3H21NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. 0--6000 MHz, 19.3 dB 20.5 dBm InGaP HBT GPA Features Frequency: 0--6000 MHz P1dB: 20.5 dBm @ 900 MHz Small--Signal Gain: 19.3 dB @ 900 MHz Third Order Output Intercept Point: 37 dBm @ 900 MHz Single 5 V Supply Active Bias Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) SOT--89 Table 2. Maximum Ratings Rating Characteristic Symbol 900 MHz 2140 MHz 3500 MHz Unit Small--Signal Gain (S21) Gp 19.3 16 14 dB Input Return Loss (S11) IRL --18 --25 --20 dB Output Return Loss (S22) ORL --10 --6 --8 dB Power Output @1dB Compression P1dB 20.5 19.8 17.7 dBm Third Order Output Intercept Point OIP3 37 34 31 dBm Symbol Value Unit Supply Voltage VCC 7 V Supply Current ICC 300 mA RF Input Power Pin 12 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VCC = 5 Vdc, TA = 25C, 50 ohm system, in Freescale application circuit. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 84C, 5 Vdc, 90 mA, no RF applied Symbol Value (2) Unit RJC 38.6 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2008, 2011--2012, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG3H21NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 18.3 19.3 — dB Input Return Loss (S11) IRL — --18 — dB Output Return Loss (S22) ORL — --10 — dB Power Output @ 1dB Compression P1dB — 20.5 — dBm Third Order Output Intercept Point OIP3 — 37 — dBm Characteristic Noise Figure NF — 5.5 — dB Supply Current ICC 75 90 110 mA Supply Voltage VCC — 5 — V Table 5. Functional Pin Description 2 Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22--A114) 1C Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C MMG3H21NT1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS 0 S22 --10 20 S11, S22 (dB) Gp, SMALL--SIGNAL GAIN (dB) 25 TC = --40C 15 85C 25C 10 --20 S11 --30 VCC = 5 Vdc VCC = 5 Vdc 5 --40 0 1 2 3 0 4 4 3 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 3. Input/Output Return Loss versus Frequency 21 P1dB, 1 dB COMPRESSION POINT (dBm) VCC = 5 Vdc 21 Gp, SMALL--SIGNAL GAIN (dB) 2 Figure 2. Small--Signal Gain (S21) versus Frequency 23 900 MHz 19 1960 MHz 17 15 3500 MHz 13 2600 MHz 2140 MHz 11 9 20 19 18 VCC = 5 Vdc 17 12 10 14 16 18 20 1.5 2 2.5 3 f, FREQUENCY (GHz) Figure 4. Small--Signal Gain versus Output Power Figure 5. P1dB versus Frequency 140 120 100 80 60 40 20 0 1 Pout, OUTPUT POWER (dBm) 160 0 0.5 22 1 2 3 4 5 VCC, COLLECTOR VOLTAGE (V) Figure 6. Collector Current versus Collector Voltage 6 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 8 ICC, COLLECTOR CURRENT (mA) 1 3.5 38 37 36 35 34 33 32 VCC = 5 Vdc 1 MHz Tone Spacing 31 30 0 1 2 3 4 f, FREQUENCY (GHz) Figure 7. Third Order Output Intercept Point versus Frequency MMG3H21NT1 RF Device Data Freescale Semiconductor, Inc. 3 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 38 37 36 35 34 f = 900 MHz 1 MHz Tone Spacing 33 32 4.5 4.9 4.7 5.3 5.1 5.5 VCC, COLLECTOR VOLTAGE (V) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS 39 38 37 36 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 35 --40 --20 20 40 60 80 100 T, TEMPERATURE (_C) Figure 9. Third Order Output Intercept Point versus Case Temperature Figure 8. Third Order Output Intercept Point versus Collector Voltage 105 --30 MTTF (YEARS) --40 --50 --60 --80 103 5 9 7 13 11 15 17 120 19 125 130 135 140 145 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (C) Figure 10. Third Order Intermodulation versus Output Power NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 90 mA 8 6 4 2 VCC = 5 Vdc 0 0 1 2 3 150 Figure 11. MTTF versus Junction Temperature 10 NF, NOISE FIGURE (dB) 104 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing --70 4 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 0 --20 VCC = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF --30 --40 --50 --60 --70 8 10 12 14 16 18 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power 20 MMG3H21NT1 4 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 30--300 MHz VSUPPLY R1 C4 C3 L1 RF INPUT Z1 DUT Z2 Z4 Z5 C2 VCC C1 Z1, Z5 Z2 Z3 Z3 RF OUTPUT 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip Z4 PCB 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 S21 S21, S11, S22 (dB) 20 R1 10 VCC = 5 Vdc 0 --10 C1 L1 C4 C3 C2 S22 --20 S11 --30 0 100 MMG30XX Rev 2 200 300 500 400 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3 0.1 F Chip Capacitors C0603C104J5RAC Kemet C4 1 F Chip Capacitor C0603C105J5RAC Kemet L1 470 nH Chip Inductor BK2125HM471--T Taiyo Yuden R1 0 Chip Resistor ERJ3GEY0R00V Panasonic MMG3H21NT1 RF Device Data Freescale Semiconductor, Inc. 5 50 OHM APPLICATION CIRCUIT: 300--3600 MHz VSUPPLY R1 C4 C3 L1 RF INPUT Z1 DUT Z2 Z4 Z5 C2 VCC C1 Z1, Z5 Z2 Z3 Z3 RF OUTPUT 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip Z4 PCB 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 30 S21 20 R1 S21, S11, S22 (dB) 10 0 C1 S22 L1 C4 C3 C2 --10 --20 S11 --30 --40 300 MMG30XX Rev 2 VCC = 5 Vdc 800 1300 1800 2300 2800 3300 3800 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 150 pF Chip Capacitors C0603C104J5RAC Kemet C3 0.1 F Chip Capacitor C0603C105J5RAC Kemet C4 1 F Chip Capacitor C0603C105J5RAC Kemet L1 56 nH Chip Inductor HK160856NJ--T Taiyo Yuden R1 0 Chip Resistor ERJ3GEY0R00V Panasonic MMG3H21NT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Source S--Parameters (VCC = 5 Vdc, TA = 25C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 100 0.093 176.9 10.209 175.9 0.0561 0.4 0.214 --7.4 150 0.090 165.2 10.269 171.9 0.0565 --1.4 0.234 --17.0 200 0.087 162.0 10.228 169.1 0.0565 --2.0 0.241 --23.4 250 0.085 157.6 10.184 166.4 0.0563 --2.5 0.246 --29.9 300 0.084 155.6 10.141 163.7 0.0563 --3.0 0.249 --35.4 350 0.082 150.2 10.080 161.1 0.0561 --3.4 0.260 --40.9 400 0.081 147.6 10.025 158.4 0.0561 --3.8 0.265 --46.5 450 0.080 143.7 9.955 155.8 0.0559 --4.3 0.272 --50.9 500 0.078 139.6 9.884 153.3 0.0559 --4.5 0.281 --55.7 550 0.078 136.5 9.815 150.7 0.0557 --5.1 0.289 --60.7 600 0.076 131.9 9.729 148.2 0.0555 --5.3 0.297 --64.6 650 0.075 127.5 9.645 145.6 0.0553 --5.9 0.306 --69.2 700 0.074 124.7 9.556 143.1 0.0552 --6.2 0.315 --73.0 750 0.074 121.7 9.465 140.7 0.0550 --6.5 0.323 --77.0 800 0.071 118.2 9.365 138.2 0.0548 --6.8 0.329 --80.8 850 0.071 116.4 9.267 135.9 0.0548 --7.0 0.337 --84.5 900 0.068 113.1 9.168 133.5 0.0545 --7.3 0.348 --87.9 950 0.067 111.2 9.059 131.1 0.0543 --7.6 0.353 --91.3 1000 0.064 109.8 8.966 128.8 0.0543 --7.8 0.361 --94.5 1050 0.055 113.6 8.884 126.5 0.0542 --8.2 0.360 --98.5 1100 0.050 107.1 8.779 124.3 0.0543 --8.3 0.370 --101.2 1150 0.046 101.8 8.676 122.1 0.0543 --8.5 0.378 --103.2 1200 0.043 95.4 8.572 120.0 0.0542 --8.6 0.385 --105.6 1250 0.040 86.3 8.459 117.8 0.0542 --8.9 0.394 --107.9 1300 0.037 79.4 8.354 115.8 0.0541 --9.1 0.397 --110.1 1350 0.035 72.3 8.255 113.7 0.0541 --9.3 0.404 --112.2 1400 0.034 64.0 8.152 111.7 0.0540 --9.3 0.409 --114.5 1450 0.032 57.1 8.061 109.6 0.0540 --9.5 0.414 --116.7 1500 0.031 51.1 7.962 107.6 0.0541 --9.8 0.417 --118.6 1550 0.031 44.3 7.860 105.6 0.0541 --10.0 0.422 --121.1 1600 0.031 37.9 7.767 103.6 0.0542 --10.0 0.426 --123.3 1650 0.030 33.0 7.675 101.6 0.0541 --10.3 0.428 --125.5 1700 0.030 28.6 7.586 99.7 0.0542 --10.6 0.433 --127.9 1750 0.029 22.7 7.501 97.7 0.0543 --10.7 0.436 --130.0 1800 0.028 21.9 7.414 95.7 0.0545 --11.1 0.440 --132.5 1850 0.028 18.7 7.327 93.7 0.0545 --11.4 0.443 --134.9 1900 0.026 16.5 7.236 91.8 0.0546 --11.5 0.447 --137.3 1950 0.025 19.0 7.144 89.8 0.0547 --11.8 0.452 --139.7 2000 0.025 17.3 7.057 87.9 0.0548 --12.2 0.455 --142.2 2050 0.023 18.5 6.966 86.0 0.0549 --12.4 0.459 --144.5 2100 0.023 22.9 6.876 84.1 0.0551 --12.8 0.463 --146.9 2150 0.022 23.0 6.789 82.2 0.0552 --13.0 0.469 --149.1 2200 0.021 27.2 6.698 80.3 0.0553 --13.4 0.474 --151.4 2250 0.021 29.4 6.611 78.5 0.0555 --13.7 0.478 --153.4 2300 0.020 31.4 6.526 76.7 0.0557 --14.0 0.482 --155.4 (continued) MMG3H21NT1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Source S--Parameters (VCC = 5 Vdc, TA = 25C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 2350 0.019 35.6 6.440 74.9 0.0558 --14.3 0.487 --157.5 2400 0.020 39.7 6.356 73.1 0.0560 --14.6 0.490 --159.5 2450 0.019 42.0 6.276 71.4 0.0561 --15.0 0.494 --161.4 2500 0.019 48.6 6.196 69.7 0.0563 --15.2 0.499 --163.1 2550 0.018 52.4 6.121 68.0 0.0564 --15.6 0.502 --164.9 2600 0.018 59.8 6.047 66.3 0.0567 --16.0 0.506 --166.6 2650 0.018 66.3 5.974 64.6 0.0568 --16.3 0.509 --168.4 2700 0.018 73.3 5.903 62.9 0.0570 --16.6 0.514 --170.1 2750 0.019 81.4 5.832 61.3 0.0572 --16.9 0.516 --171.7 2800 0.019 86.0 5.769 59.7 0.0575 --17.2 0.518 --173.4 2850 0.020 93.6 5.706 58.1 0.0578 --17.5 0.522 --174.8 2900 0.021 101.3 5.642 56.4 0.0581 --17.8 0.521 --176.5 2950 0.021 107.6 5.581 54.8 0.0584 --18.2 0.524 --177.8 3000 0.022 113.4 5.520 53.3 0.0587 --18.5 0.526 --179.3 3050 0.023 120.3 5.461 51.7 0.0592 --19.0 0.529 179.1 3100 0.023 127.4 5.407 50.1 0.0595 --19.1 0.532 177.9 3150 0.024 134.5 5.357 48.5 0.0600 --19.6 0.533 176.5 3200 0.026 139.1 5.299 47.0 0.0603 --20.1 0.536 175.2 3250 0.028 145.9 5.250 45.4 0.0606 --20.5 0.537 173.8 3300 0.030 149.0 5.198 43.8 0.0610 --21.1 0.537 172.3 3350 0.030 155.3 5.144 42.3 0.0613 --21.6 0.538 171.2 3400 0.032 157.4 5.096 40.8 0.0617 --22.0 0.540 169.9 3450 0.033 162.3 5.050 39.2 0.0620 --22.5 0.541 168.6 3500 0.034 167.0 5.004 37.7 0.0625 --22.9 0.542 167.3 3550 0.035 169.1 4.956 36.1 0.0629 --23.5 0.543 166.1 3600 0.035 171.2 4.911 34.6 0.0633 --23.9 0.546 164.6 3650 0.037 172.3 4.864 33.0 0.0637 --24.6 0.546 163.3 3700 0.037 173.3 4.817 31.5 0.0641 --25.1 0.549 162.1 3750 0.037 172.4 4.771 30.0 0.0644 --25.5 0.551 160.7 3800 0.038 171.4 4.724 28.4 0.0647 --26.3 0.551 159.2 3850 0.037 170.9 4.679 26.9 0.0652 --26.7 0.553 157.8 3900 0.037 169.3 4.635 25.4 0.0655 --27.4 0.557 156.3 3950 0.037 166.8 4.589 23.9 0.0659 --28.0 0.559 154.6 4000 0.037 161.6 4.543 22.3 0.0662 --28.6 0.561 153.3 MMG3H21NT1 8 RF Device Data Freescale Semiconductor, Inc. 1.90 3.00 2X 45 4.35 2X 1.25 3X 0.70 0.85 2X 1.50 Figure 20. PCB Pad Layout for SOT--89A M3H21N ( ) YYWW Figure 21. Product Marking MMG3H21NT1 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS MMG3H21NT1 10 RF Device Data Freescale Semiconductor, Inc. MMG3H21NT1 RF Device Data Freescale Semiconductor, Inc. 11 MMG3H21NT1 12 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3100: General Purpose Amplifier and MMIC Biasing Software .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2008 Initial Release of Data Sheet 1 Jan. 2011 Corrected temperature at which ThetaJC is measured from 25C to 84C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 Removed ICC bias callout from applicable graphs as bias is not a controlled value, pp. 4--7 Removed ICC bias callout from Table 10, Common Source S--Parameters heading as bias is not a controlled value, pp. 8--9 Added .s2p file and Printed Circuit Boards availability to Software and Tools, p. 14 2 Sept. 2012 Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02 (SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has slight dimensional differences, pp. 1, 10--13. Refer to PCN13337, GaAs Fab Transfer. Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 3 Added Fig. 21, Product Marking, p. 10 3 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Added Failure Analysis information, p. 13 MMG3H21NT1 RF Device Data Freescale Semiconductor, Inc. 13 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2008, 2011--2012, 2014 Freescale Semiconductor, Inc. MMG3H21NT1 Document Number: MMG3H21NT1 Rev. 3, 9/2014 14 RF Device Data Freescale Semiconductor, Inc.