Freescale Semiconductor Technical Data Document Number: A2I25D025N Rev. 0, 3/2015 RF LDMOS Wideband Integrated Power Amplifiers The A2I25D025N wideband integrated circuit is designed with on--chip matching that makes it usable from 2100 to 2900 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 136 mA, Pout = 3.2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) PAE (%) ACPR (dBc) 2300 MHz 32.0 19.0 –46.7 2350 MHz 31.8 19.0 –47.1 2400 MHz 31.7 19.1 –47.5 2496 MHz 31.7 19.3 –47.3 2600 MHz 32.0 19.5 –47.1 2690 MHz 32.5 20.0 –46.8 A2I25D025NR1 A2I25D025GNR1 2100–2900 MHz, 3.2 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--17 PLASTIC A2I25D025NR1 TO--270WBG--17 PLASTIC A2I25D025GNR1 Features On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications VDS1A RFinA VGS1A VGS2A VGS1B VGS2B RFout1/VDS2A Quiescent Current Temperature Compensation (2) Quiescent Current Temperature Compensation (2) RFinB RFout2/VDS2B VDS1A VGS2A VGS1A RFinA N.C. GND GND N.C. RFinB VGS1B VGS2B VDS1B 1 2 3 4 5 6 7 8 9 10 11 12 17 16 15 14 13 VBWA RFout1/VDS2A GND RFout2/VDS2B VBWB (Top View) Note: Exposed backside of the package is the source terminal for the transistors. VDS1B Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. All data measured in fixture with device soldered to heatsink. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2I25D025NR1 A2I25D025GNR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C Input Power Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 74C, 3.2 W, 2496 MHz Stage 1, 28 Vdc, IDQ1(A+B) = 56 mA Stage 2, 28 Vdc, IDQ2(A+B) = 136 mA RJC C/W 6.3 1.8 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 2.5 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 59 mAdc) VGS(Q) — 2.0 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1(A+B) = 59 mAdc, Measured in Functional Test) VGG(Q) 4.6 5.3 6.1 Vdc Characteristic Stage 1 -- Off Characteristics (4) Stage 1 -- On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) A2I25D025NR1 A2I25D025GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 16 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2(A+B) = 157 mAdc) VGS(Q) — 1.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2(A+B) = 157 mAdc, Measured in Functional Test) VGG(Q) 4.3 5.0 5.8 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 200 mAdc) VDS(on) 0.1 0.22 1.5 Vdc Stage 2 -- Off Characteristics (1) Stage 2 -- On Characteristics Functional Tests (2,3) (In Freescale Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 59 mA, IDQ2(A+B) = 157 mA, Pout = 3.2 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 30.5 31.9 34.5 dB Power Added Efficiency PAE 18.0 19.7 — % Load Mismatch (In Freescale Production Test Fixture, 50 ohm system) IDQ1(A+B) = 59 mA, IDQ2(A+B) = 157 mA, f = 2600 MHz VSWR 10:1 at 32 Vdc, 36.3 W CW Output Power (3 dB Input Overdrive from 25 W CW Rated Power) No Device Degradation Typical Performance (4) (In Freescale Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 136 mA, 2300–2690 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW P1dB — 24 — W P3dB — 35.5 — W — –9.0 — VBWres — 170 — MHz — — 2.43 1.13 — — (5) AM/PM (Maximum value measured at the P3dB compression point across the 2300–2690 MHz frequency range.) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (6) with 4.7 k Gate Feed Resistors (–30 to 85C) Stage 1 with 4.7 k Gate Feed Resistors (–30 to 85C) Stage 2 IQT % Gain Flatness in 390 MHz Bandwidth @ Pout = 3.2 W Avg. GF — 0.8 — dB Gain Variation over Temperature (–30C to +85C) G — 0.036 — dB/C P1dB — 0.004 — dB/C Output Power Variation over Temperature (–30C to +85C) Table 6. Ordering Information Device A2I25D025NR1 A2I25D025GNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel Package TO--270WB--17 TO--270WBG--17 1. Each side of device measured separately. 2. Part internally input and output matched. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 4. All data measured in fixture with device soldered to heatsink. 5. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 6. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 3 D62771 VDD1A VGG2A VDD2A R1 R2 C9 C7 R5 C11 C13 C1 C2 Z1 C8 C17 C15 C6 C14 C12 C10 R3 R4 VGG1B VGG2B VDD1B A2I25D025N Rev. P1 C3 C19 C21 C5 CUT OUT AREA VGG1A Z2 C20 C22 C16 C18 R6 C4 VDD2B Figure 3. A2I25D025NR1 Production Test Circuit Component Layout Table 7. A2I25D025NR1 Production Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 0.9 pF Chip Capacitors ATC600F0R9BT250XT ATC C3, C4 15 pF Chip Capacitors ATC600F150JT250XT ATC C5, C6 30 pF Chip Capacitors ATC600F300JT250XT ATC C7, C8, C9, C10, C15, C16, C19, C20 4.7 F Chip Capacitors GRM31CR71H475KA12L Murata C11, C12, C17, C18, C21, C22 10 F Chip Capacitors GRM31CR61H106KA12L Murata C13, C14 1 F Chip Capacitors GRM31MR71H105KA88L Murata R1, R4 4.7 K Chip Resistors CRCW12064K70FKEA Vishay R2, R3 2.2 k, 1/4 W Chip Resistors CRCW12062K20FKEA Vishay R5, R6 50 , 10 W Chip Resistors 060120A15Z50--2 Anaren Z1, Z2 2300–2900 MHz Band, 3 dB Hybrid Couplers X3C26P1-03S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D62771 MTL A2I25D025NR1 A2I25D025GNR1 4 RF Device Data Freescale Semiconductor, Inc. VDD1A VGG2A VGG1A VDD2A R3 C5 R1 R5 C7 C9 C11 C1 C3 Q1 Z1 Z2 C4 C2 R2 VGG1B A2I25D025N Rev. 2 C13 C15 C6 R4 C8 C12 C10 R6 C16 C14 D62833 VDD2B VGG2B VDD1B Note: All data measured in fixture with device soldered to heatsink. Figure 4. A2I25D025NR1 Characterization Test Circuit Component Layout Table 8. A2I25D025NR1 Characterization Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 0.9 pF Chip Capacitors ATC600F0R9BT250XT ATC C3, C4 20 pF Chip Capacitors ATC600F200JT250XT ATC C5, C6, C7, C8, C15, C16 4.7 F Chip Capacitors GRM31CR71H475KA12L Murata C9, C10, C13, C14 10 F Chip Capacitors GRM31CR61H106KA12L Murata C11, C12 1.0 F Chip Capacitors GRM31MR71H105KA88L Murata Q1 RF LDMOS Power Amplifier A2I25D025NR1 Freescale R1, R2 2.2 k, 1/4 W Chip Resistors CRCW12062K20FKEA Vishay R3, R4 4.7 k, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay R5, R6 50 , 8 W Chip Resistors C8A50Z4A Anaren Z1, Z2 2300–2900 MHz Band, 3 dB Hybrid Couplers X3C26P1-03S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D62833 MTL A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 5 20.5 --45.5 --0.4 31.8 --46 --0.5 19.5 19 18.5 PARC 31.6 --46.5 --47 31.4 ACPR 31.2 31 2300 2350 2400 2450 2500 2550 --47.5 2600 2650 --0.6 --0.7 --0.8 PARC (dB) 20 PAE, POWER ADDED EFFICIENCY (%) 33 VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1(A+B) = 56 mA 32.8 I DQ2(A+B) = 136 mA, Single--Carrier W--CDMA 32.6 3.84 MHz Channel Bandwidth PAE 32.4 32.2 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF Gps 32 ACPR (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS --0.9 --48 2700 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 3.2 Watts Avg. --10 VDD = 28 Vdc, Pout = 13.5 W (PEP), IDQ1(A+B) = 56 mA IDQ2(A+B) = 136 mA, Two--Tone Measurements IM3--U (f1 + f2)/2 = Center Frequency of 2590 MHz --20 --30 IM5--L --40 IM3--L IM5--U --50 IM7--U IM7--L --60 --70 1 10 300 100 TWO--TONE SPACING (MHz) 32 0 31.8 31.6 31.4 31.2 31 35 PAE --1 30 --1 dB = 3.6 W --2 ACPR --2 dB = 5.4 W 25 Gps --3 dB = 7.2 W --3 20 --4 --5 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 2 4 6 8 --20 40 VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 136 mA f = 2590 MHz, Single--Carrier W--CDMA 15 PARC 10 12 10 --25 --30 --35 ACPR (dBc) 1 PAE, POWER ADDED EFFICIENCY (%) 32.2 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 6. Intermodulation Distortion Products versus Two--Tone Spacing --40 --45 --50 Pout, OUTPUT POWER (WATTS) Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2I25D025NR1 A2I25D025GNR1 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 60 PAE 50 32 2496 MHz 30 ACPR 2590 MHz 2690 MHz 2496 MHz 2590 MHz 28 2690 MHz 26 40 30 20 2690 MHz 2590 MHz Gps 10 2496 MHz 0 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 136 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 24 1 10 --10 --20 --30 --40 ACPR (dBc) 36 --50 --60 50 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power — 2496–2690 MHz 2400 MHz 50 2300 MHz ACPR PAE 28 2300 MHz 40 30 20 26 2350 MHz 60 Gps 2400 MHz 10 0 0 24 1 10 --10 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 136 mA Single--Carrier W--CDMA, 3.84 MHz Channel 34 Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 2350 MHz 32 2400 MHz 2350 MHz 2300 MHz 30 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 36 --50 --60 50 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power — 2300–2400 MHz 36 34 Gain GAIN (dB) 32 30 VDD = 28 Vdc Pin = 0 dBm IDQ1(A+B) = 56 mA IDQ2(A+B) = 136 mA 28 26 24 1500 1750 2000 2250 2500 2750 3000 3250 3500 f, FREQUENCY (MHz) Note: Frequency response at band edges limited by hybrid couplers. Figure 10. Broadband Frequency Response A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 7 Table 9. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ1(A) = 29 mA, IDQ2(A) = 75 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB Zload () (1) Gain (dB) (dBm) (W) PAE (%) AM/PM () 10.4 – j9.63 30.4 42.6 18 59.0 –2 10.8 – j11.0 30.5 42.5 18 56.9 –2 43.5 – j26.0 10.6 – j8.31 30.7 42.3 17 57.2 –3 43.9 + j37.9 40.7 – j37.0 10.1 – j8.37 31.0 42.6 18 60.5 –3 2590 33.1 + j43.7 31.4 – j41.4 9.32 – j9.38 31.0 42.7 19 60.9 –3 2690 29.5 + j41.2 28.0 – j37.3 7.84 – j9.97 30.7 42.7 18 60.8 –4 f (MHz) Zsource () Zin () 2300 35.0 + j9.89 36.0 – j13.0 2350 43.2 + j11.9 41.9 – j16.8 2400 45.8 + j23.1 2496 Max Output Power P3dB Zload () (2) Gain (dB) (dBm) (W) PAE (%) AM/PM () 9.84 – j10.3 28.2 43.3 21 59.2 –6 41.5 – j20.9 10.6 – j11.4 28.5 43.2 21 58.3 –7 41.0 – j29.4 10.6 – j8.89 28.6 43.1 21 58.9 –8 43.9 + j37.9 37.0 – j37.7 10.3 – j9.50 28.8 43.4 22 61.4 –8 2590 33.1 + j43.7 28.2 – j40.5 9.50 – j10.2 28.9 43.5 23 61.3 –8 2690 29.5 + j41.2 25.3 – j35.2 8.12 – j11.0 28.5 43.4 22 61.6 –11 f (MHz) Zsource () Zin () 2300 35.0 + j9.89 37.3 – j16.5 2350 43.2 + j11.9 2400 45.8 + j23.1 2496 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Note: Measurement made on a per side basis. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2I25D025NR1 A2I25D025GNR1 8 RF Device Data Freescale Semiconductor, Inc. Table 10. Load Pull Performance — Maximum Power Added Efficiency Tuning VDD = 28 Vdc, IDQ1(A) = 29 mA, IDQ2(A) = 75 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Power Added Efficiency P1dB Zload () (1) Gain (dB) (dBm) (W) PAE (%) AM/PM () 18.2 – j1.09 31.8 40.8 12 67.0 –6 16.1 – j0.71 31.9 40.9 12 64.2 –6 46.9 – j26.5 14.9 – j0.56 31.9 41.1 13 65.4 –5 43.9 + j37.9 42.8 – j38.7 12.1 – j2.47 31.9 41.6 14 67.5 –6 2590 33.1 + j43.7 32.9 – j44.4 9.72 – j2.39 32.1 41.3 14 68.8 –7 2690 29.5 + j41.2 28.3 – j41.3 7.82 – j4.78 31.8 41.4 14 67.9 –9 f (MHz) Zsource () Zin () 2300 35.0 + j9.89 38.0 – j10.9 2350 43.2 + j11.9 45.1 – j14.7 2400 45.8 + j23.1 2496 Max Power Added Efficiency P3dB Zload () (2) Gain (dB) (dBm) (W) PAE (%) AM/PM () 17.2 – j2.23 29.7 41.7 15 66.7 –11 44.6 – j17.7 15.8 – j2.22 29.8 41.9 15 64.7 –9 45.2 – j28.8 14.2 – j0.88 29.9 41.9 15 65.7 –10 43.9 + j37.9 40.4 – j39.4 11.9 – j2.47 29.9 42.3 17 67.9 –11 2590 33.1 + j43.7 30.3 – j43.9 9.68 – j2.97 30.0 42.1 16 68.5 –12 2690 29.5 + j41.2 25.7 – j39.0 7.97 – j5.65 29.7 42.4 17 67.4 –15 f (MHz) Zsource () Zin () 2300 35.0 + j9.89 38.7 – j13.1 2350 43.2 + j11.9 2400 45.8 + j23.1 2496 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Note: Measurement made on a per side basis. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 9 P1dB -- TYPICAL LOAD PULL CONTOURS — 2590 MHz 0 0 39.5 40 --2 40.5 41 --2 E IMAGINARY () IMAGINARY () --4 --6 --8 42 --10 P 6 8 10 REAL () 12 14 52 54 6 4 62 P 56 8 58 10 REAL () 60 12 14 16 Figure 12. P1dB Load Pull Efficiency Contours (%) Figure 11. P1dB Load Pull Output Power Contours (dBm) 0 0 32 --2 --6 IMAGINARY () 31.5 31 --8 30.5 29.5 --10 E --10 --4 --8 --6 --6 --4 --8 P --10 30 29 --12 P --12 --14 --2 E --4 IMAGINARY () 64 66 --8 --14 16 68 --6 --12 40.5 41 4 --4 --10 41.5 --12 --14 42.5 E --12 28.5 --14 4 6 8 10 REAL () 12 14 16 Figure 13. P1dB Load Pull Gain Contours (dB) NOTE: --14 4 6 8 10 REAL () 12 14 16 Figure 14. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Power Added Efficiency Gain Power Added Efficiency Linearity Output Power A2I25D025NR1 A2I25D025GNR1 10 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL LOAD PULL CONTOURS — 2590 MHz 0 0 40 40.5 --2 41 41.5 --4 42.5 IMAGINARY () IMAGINARY () --2 42 E --6 43 --8 43.5 --10 --6 6 4 8 10 REAL () 12 14 --14 16 52 0 P 58 6 4 8 10 REAL () 14 12 16 0 --22 30 --2 --2 --4 IMAGINARY () 29.5 --6 29 --8 27.5 --10 28.5 27 --12 6 --10 E --8 --6 --8 P --6 --12 26.5 4 --16 --4 --10 P 28 --12 --14 --18 --20 E IMAGINARY () 60 56 Figure 16. P3dB Load Pull Efficiency Contours (%) Figure 15. P3dB Load Pull Output Power Contours (dBm) --14 62 54 --8 --12 --12 --14 68 64 --10 P E 66 --4 8 10 REAL () 12 14 16 Figure 17. P3dB Load Pull Gain Contours (dB) NOTE: --14 4 6 8 10 REAL () 12 14 16 Figure 18. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Power Added Efficiency Gain Power Added Efficiency Linearity Output Power A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 11 PACKAGE DIMENSIONS A2I25D025NR1 A2I25D025GNR1 12 RF Device Data Freescale Semiconductor, Inc. A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 13 A2I25D025NR1 A2I25D025GNR1 14 RF Device Data Freescale Semiconductor, Inc. A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 15 A2I25D025NR1 A2I25D025GNR1 16 RF Device Data Freescale Semiconductor, Inc. A2I25D025NR1 A2I25D025GNR1 RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Mar. 2015 Description Initial release of data sheet A2I25D025NR1 A2I25D025GNR1 18 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. A2I25D025NR1 A2I25D025GNR1 Document Number: RF Device Data A2I25D025N Rev. 0, 3/2015Semiconductor, Inc. Freescale 19