Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S21200H
Rev. 2, 10/2010
RF Power Field Effect Transistors
MRF8S21200HR6
MRF8S21200HSR6
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.8
32.6
6.4
--37.7
2140 MHz
18.1
32.6
6.3
--37.1
2170 MHz
18.1
32.9
6.2
--36.2
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
2110--2170 MHz, 48 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF8S21200HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8S21200HSR6
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
(Top View)
CW
200
1.6
W
W/°C
Figure 1. Pin Connections
CW Operation @ TA = 25°C
Derate above 25°C
RFin/VGS
3
1 RFout/VDS
RFin/VGS
4
2 RFout/VDS
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 48 W CW, 28 Vdc, IDQ = 1400 mA
Case Temperature 81°C, 200 W CW, 28 Vdc, IDQ = 1400 mA
Symbol
RθJC
Value (2,3)
0.31
0.27
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21200HR6 MRF8S21200HSR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mA, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
18.1
19.5
dB
Drain Efficiency
ηD
30.0
32.6
—
%
PAR
5.7
6.3
—
dB
ACPR
—
--37.1
--35.0
dBc
IRL
—
--15
--7
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.8
32.6
6.4
--37.7
--15
2140 MHz
18.1
32.6
6.3
--37.1
--15
2170 MHz
18.1
32.9
6.2
--36.2
--13
1. Part internally matched both on input and output.
(continued)
MRF8S21200HR6 MRF8S21200HSR6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth
IMD Symmetry @ 140 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
MHz
—
8
—
VBWres
—
35
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 48 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.02
—
dB/°C
∆P1dB
—
0.02
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
3
C12
C14
C4
C6
C15
R4
C18
R2
R1
C1*
C3
C2
C8
C9
C10
C11*
R3
R5
C13 C16
C7
C17
C5
MRF8S21200H
Rev. 2
*C1 and C11 are mounted vertically.
Figure 2. MRF8S21200HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8S21200HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C5, C11, C12, C13
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C2
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C3
0.6 pF Chip Capacitor
ATC100B0R6BT500XT
ATC
C6, C7, C14, C15, C16, C17
10 μF, 50 V Chip Capacitors
C5750X5R1H106MT
TDK
C8
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C9
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C10
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C18
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
R1
22 Ω, 1/4 W Chip Resistor
CRCW120622R0FKEA
Vishay
R2, R3
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
R4, R5
0 Ω, 3 A Chip Resistors
CRCW12060000Z0EA
Vishay
PCB
0.030″, εr = 3.5
RO4350B
Rogers
MRF8S21200HR6 MRF8S21200HSR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
32
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
18.4
18.2
31
30
Gps
18
17.8
IRL
17.6
17.2
2080
--9.8
--36.4
--37.2
ACPR
17
2060
--8
--34.8
--35.6
PARC
17.4
--34
2100
2120
2140
2160
2180
--38
2220
2200
--11.6
--13.4
--15.2
--17
0
--0.5
--1
--1.5
PARC (dB)
33
IRL, INPUT RETURN LOSS (dB)
ηD
18.6
ηD, DRAIN
EFFICIENCY (%)
18.8
Gps, POWER GAIN (dB)
34
VDD = 28 Vdc, Pout = 48 W (Avg.), IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
ACPR (dBc)
19
--2
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 48 Watts Avg.
--10
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50
IM7--L
IM7--U
--60
1
100
10
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
17.5
17
16.5
16
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input
0
Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
--1
--2
ACPR
Gps
--2 dB = 57 W
--4
--3 dB = 76 W
20
40
--20
43
--25
38
33
--1 dB = 42 W
--3
--5
ηD
48
60
80
--35
--40
23
--45
18
120
--50
PARC
100
28
--30
ACPR (dBc)
18
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
18.5
1
ηD, DRAIN EFFICIENCY (%)
19
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
20
ηD
18
0
50
--10
40
f = 2110 MHz
16
2140 MHz
ACPR
2170 MHz
2170 MHz
14
Gps
2140 MHz
2110 MHz
12
10
60
2110 MHz
20
10
2140 MHz
2170 MHz
1
30
10
0
300
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
22
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
21
Gain
--3
15
--6
12
--9
IRL
--12
9
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
6
3
1750
1850
1950
2050
IRL (dB)
GAIN (dB)
18
--15
2150
2350
2250
2450
--18
2550
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8S21200HR6 MRF8S21200HSR6
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2060
3.64 -- j4.51
1.42 -- j2.27
2080
3.65 -- j4.50
1.41 -- j2.21
2100
3.64 -- j4.53
1.40 -- j2.15
2120
3.56 -- j4.47
1.40 -- j2.09
2140
3.58 -- j4.44
1.39 -- j2.03
2160
3.58 -- j4.44
1.38 -- j1.97
2180
3.57 -- j4.44
1.38 -- j1.91
2200
3.56 -- j4.45
1.38 -- j1.86
2220
3.54 -- j4.64
1.37 -- j1.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
61
Ideal
Pout, OUTPUT POWER (dBm)
60
59
58
57
56
55
54
Actual
f = 2170 MHz
53
f = 2110 MHz
52
f = 2110 MHz
51
50
30
31
32
33
34
f = 2140 MHz
36
35
f = 2140 MHz
f = 2170 MHz
38
37
39
40
41
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2110
231
53.6
276
54.4
2140
230
53.6
279
54.5
2170
229
53.6
277
54.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2110
P1dB
2.14 -- j5.14
0.77 -- j1.44
2140
P1dB
3.28 -- j6.37
0.75 -- j1.52
2170
P1dB
5.59 -- j7.20
0.67 -- j1.41
Figure 11. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S21200HR6 MRF8S21200HSR6
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
9
MRF8S21200HR6 MRF8S21200HSR6
10
RF Device Data
Freescale Semiconductor
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
11
MRF8S21200HR6 MRF8S21200HSR6
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2009
• Initial Release of Data Sheet
1
Nov. 2009
• Removed Typical Pout @ 1 dB Compression Point bullet from p. 1, and P1dB from the Typical Performance
table, p. 3. P1dB was artificially low due to fixture tuning tradeoffs, i.e., fixture was tuned for back--off
linearity versus optimum P1dB.
2
Oct. 2010
• Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of the
device, p. 2.
MRF8S21200HR6 MRF8S21200HSR6
RF Device Data
Freescale Semiconductor
13
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MRF8S21200HR6 MRF8S21200HSR6
Document Number: MRF8S21200H
Rev. 2, 10/2010
14
RF Device Data
Freescale Semiconductor