NUP4302MR6 Schottky Diode Array for Four Data Line ESD Protection The NUP4302MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. http://onsemi.com Features • • • • • • • Very Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection ESD Rating of Class 3B (Exceeding 16 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model IEC 61000−4−2 Level 4 ESD Protection Flammability Rating: UL 94 V−0 Pb−Free Package is Available PIN CONFIGURATION AND SCHEMATIC I/O 1 6 I/O GND 2 5 VCC 4 I/O 1/O 3 Applications • • • • MARKING DIAGRAM Ultra High−Speed Switching USB 1.1 and 2.0 Power and Data Line Protection Digital Video Interface (DVI) Monitors and Flat Panel Displays 1 TSOP−6 CASE 318G STYLE 12 67 M G 67 M G G 1 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NUP4302MR6T1 NUP4302MR6T1G Package Shipping † TSOP−6 3000/Tape & Reel TSOP−6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NUP4302MR6/D NUP4302MR6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit VBR 30 V Forward Power Dissipation (TA = 25°C) PF 225 mW Forward Continuous Current IF 200 mA Junction Operating Temperature TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Rating Peak Reverse Breakdown Voltage Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Reverse Breakdown Voltage VBR Conditions Min IR VR = 25 V Forward Voltage VF Forward Voltage VF Forward Voltage Max Unit 30 IR = 100 A Reverse Leakage Typ V 30 A IF = 0.1 mAdc 0.28 V IF = 1.0 mAdc 0.35 V VF IF = 10 mAdc 0.45 V Forward Voltage VF IF = 100 mAdc 1.00 V Total Capacitance CT VR = 0 V, f = 1.0 MHz, I/O to Ground VR = 0 V, f = 1.0 MHz, I/O to I/O 28 18 pF Reverse Recovery Time trr IF = IR = 10 mA, IR(REC) = 1.0 mA (Figure 1) 5.0 ns 820 +10 V 2k 100 H 0.1 F IF tr 0.1 F t IF trr 10% DUT 50 OUTPUT PULSE GENERATOR tp 50 INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 t NUP4302MR6 IR, REVERSE CURRENT (A) 10,000 TA = 1 25°C 85°C 100 25°C 10 1 0 0.2 0.4 0.6 0.8 TA = 1 25°C 1000 85°C 100 10 25°C 1 0.1 1.0 0 5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Current as a Function of Forward Voltage; Typical Values 25 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current as a Function of Reverse Voltage; Typical Values 40 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 f = 1 MHz TA = 25°C 35 30 25 20 15 10 5 0 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance as a Function of Reverse Voltage; Typical Values http://onsemi.com 3 30 30 NUP4302MR6 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e A 0.05 (0.002) q c L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 12: PIN 1. I/O 2. GROUND 3. I/O 4. I/O 5. VCC 6. I/O SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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