MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTOR Features • Pb−Free Package is Available COLLECTOR 1, 2, 5 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −30 Vdc Collector-Base Voltage VCBO −50 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −1.0 Adc ICM −2.0 A ESD HBM Class 3 MM Class C Collector Current − Continuous Collector Current − Peak Electrostatic Discharge 3 BASE 6 EMITTER 3 4 THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C Characteristic PD (Note 1) 540 4.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 230 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 925 7.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 135 °C/W Total Device Dissipation (Single Pulse < 10 s) PDsingle (Note 2) (Note 3) 1.3 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 5 2 1 6 TSOP−6 CASE 318G STYLE 7 MARKING DIAGRAM G3 M G G 1 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 G3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6589T1 MMBT6589T1G Package Shipping † TSOP−6 3000/Tape & Reel TSOP−6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 1 1 Publication Order Number: MMBT6589T1/D MMBT6589T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 − −50 − −5.0 − − −0.1 − −0.1 − −0.1 100 100 80 40 − 300 − − − − − −0.25 −0.30 −0.65 − −1.2 − −1.1 100 − − 20 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −30 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (Figure 1) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = 2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (Figure 3) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = 0.1 A) (IC = −2.0 A, IB = −0.2 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (Figure 2) (IC = −1.0 A, IB = −0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT Output Capacitance (VCB = −5.0 V, f = 1.0 MHz) Cobo 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 MHz pF MMBT6589T1 200 230 210 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = −2.0 V 100 50 190 170 150 25°C 130 110 90 −55°C 70 0 0.001 0.01 0.1 1.0 50 10 1000 Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100 Figure 1. DC Current Gain versus Collector Current VBE(sat) 0.8 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 1.0 10 100 1000 1000 mA 0.4 100 mA 50 mA 0.1 0.8 0.75 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.6 0.01 IC/IB = 10 Figure 3. “On” Voltages 0.8 10 mA 0.9 0.85 IC, COLLECTOR CURRENT (AMPS) 1.0 0.2 0.95 IC, COLLECTOR CURRENT (mA) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 IC, COLLECTOR CURRENT (mA) 0.9 0 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 0 VCE = −1.0 V 125°C 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 10 MMBT6589T1 IC , COLLECTOR CURRENT (AMPS) 10 1 s 100 ms 10 ms 1 ms 100 ms 1.0 DC 0.1 0.01 SINGLE PULSE AT Tamb = 25°C 0.1 1.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 7. Safe Operating Area 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 4 10 100 1000 MMBT6589T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. N/C 5. COLLECTOR 6. EMITTER SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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