MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −2.0 Adc Collector Current − Peak ICM −5.0 A Electrostatic Discharge ESD Collector Current − Continuous COLLECTOR 1, 2, 5, 6 3 BASE HBM Class 3 MM Class C 4 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 625 mW 5.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 200 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Thermal Resistance, Junction−to−Lead #1 RqJL 80 °C/W PDsingle (Notes 2 & 3) 1.75 W TJ, Tstg −55 to +150 °C Total Device Dissipation (Single Pulse < 10 sec.) 1.0 W 8.0 mW/°C 120 °C/W CASE 318G TSOP−6 STYLE 6 1 G4MG G 1 Junction and Storage Temperature Range © Semiconductor Components Industries, LLC, 2005 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 9 June, 2005 − Rev. 2 MARKING DIAGRAM 1 MBT35200MT1 MBT35200MT1G Package Shipping † TSOP−6 3000/Tape & Reel TSOP−6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBT35200MT1/D MBT35200MT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −35 −45 − −55 −65 − −5.0 −7.0 − − −0.03 −0.1 − −0.03 −0.1 − −0.01 −0.1 100 100 100 200 200 200 − 400 − − − − −0.125 −0.175 −0.260 −0.15 −0.20 −0.31 − −0.68 −0.85 − −0.81 −0.875 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −35 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −35 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = −1.0 A, VCE = −1.5 V) (IC = −1.5 A, VCE = −1.5 V) (IC = −2.0 A, VCE = −3.0 V) hFE Collector −Emitter Saturation Voltage (Note 1.) (IC = −0.8 A, IB = −0.008 A) (IC = −1.2 A, IB = −0.012 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 1.) (IC = −1.2 A, IB = −0.012 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 1.) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W) ton − 35 − nS Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W) toff − 225 − nS 1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 10 0.01 1.6 1.4 1.2 1.0 0.001 0.01 0.1 0.20 100°C 0.15 25°C 0.10 0.05 0 0.001 0.01 0.1 1.0 Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.0 100°C 25°C −55°C 0.2 0.001 0.01 0.1 25°C 0.6 100°C 0.4 0.2 0 1.0 −55°C 0.8 0.001 0.1 0.01 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.1 750 1.0 700 0.9 100°C 0.8 25°C 0.7 0.6 −55°C 0.5 0.4 0.3 −55°C IC, COLLECTOR CURRENT (AMPS) 0.4 0 IC/IB = 50 IC, COLLECTOR CURRENT (AMPS) 0.8 0.6 0.25 1.0 C ibo , INPUT CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 100 50 0.001 V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.1 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) MBT35200MT1 650 600 550 500 450 400 350 0.001 0.01 0.1 300 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (VOLTS) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 3 4.5 5.0 MBT35200MT1 10 200 IC , COLLECTOR CURRENT (AMPS) Cobo, OUTPUT CAPACITANCE (pF) 225 175 150 125 100 75 50 1 s 100 ms 10 ms r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 0 5.0 100 ms 1.0 DC 0.1 25 0 1 ms 0.01 SINGLE PULSE AT Tamb = 25°C VCB, COLLECTOR BASE VOLTAGE (VOLTS) 1.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Output Capacitance Figure 8. Safe Operating Area 10 15 20 25 30 35 0.1 100 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 9. Normalized Thermal Response http://onsemi.com 4 10 100 1000 MBT35200MT1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° MBT35200MT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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