Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 920 MHz 20.0 35.9 6.3 --38.0 --14 940 MHz 20.1 36.2 6.2 --37.6 --18 960 MHz 20.0 36.1 6.1 --37.5 --17 720--960 MHz, 80 W AVG., 28 V Features OM--780--2 PLASTIC • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. RFin/VGS 2 1 RFout/VDS (Top View) Figure 1. Pin Connections © Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT09S282NR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature Range TC --40 to +150 °C Operating Junction Temperature Range (1,2) TJ --40 to +225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 80 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz Case Temperature 91°C, 282 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz RθJC °C/W 0.31 0.27 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 370 μAdc) VGS(th) 1.0 1.5 2.0 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mA, Measured in Functional Test) VGS(Q) 1.7 2.2 2.7 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) 0.1 0.14 0.3 Vdc Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT09S282NR3 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 80 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 19.0 20.0 22.0 dB Drain Efficiency ηD 33.5 36.1 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 5.6 6.1 — dB ACPR — --37.5 --36.0 dBc IRL — --17 --10 dB Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz VSWR 10:1 at 32 Vdc, 416 W CW Output Power (3 dB Input Overdrive from 280 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 280 — W VBWres — 60 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 80 W Avg. GF — 0.1 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.0156 — dB/°C ∆P1dB — 0.006 — dB/°C VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30°C to +85°C) 1. Part internally matched both on input and output. AFT09S282NR3 RF Device Data Freescale Semiconductor, Inc. 3 C25 C14 C15 C3 C4 C2 C5 C1 C9 R1 R2 C6 CUT OUT AREA C8 C10 C11 C12 C13 C16 C17 C20 C24 C26* C21 C22 C18 C19 C23 C7 AFT09S282N Rev. 0 *C26 is mounted vertically. Figure 2. AFT09S282NR3 Test Circuit Component Layout Table 6. AFT09S282NR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 62 pF Chip Capacitor ATC100B620JT500XT ATC C2, C5, C10, C13 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC C3, C7, C14, C15, C22, C23 10 μF Chip Capacitors GRM32ER71H106KA12L Murata C4, C6, C16, C17, C18, C19 47 pF Chip Capacitors ATC600F470JT250XT ATC C8, C9, C11, C24 3.9 pF Chip Capacitors ATC600F3R9BT250XT ATC C12, C20, C21 2.4 pF Chip Capacitors ATC600F2R4BT250XT ATC C25 470 μF, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp C26 36 pF Chip Capacitor ATC100B360JT500XT ATC R1, R2 6.04 Ω, 1/4 W Chip Resistor CRCW12066R04FKEA Vishay PCB 0.020″, εr = 3.5 RO4350 Rogers AFT09S282NR3 4 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, Pout = 80 W (Avg.) 30 IDQ = 1400 mA, Single--Carrier W--CDMA 26 20 19 22 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps 18 17 16 PARC --38 --5 --40 14 --41 IRL 13 820 --0 --39 ACPR 15 --37 --10 --15 --20 --42 840 860 880 900 920 940 960 --25 980 --1 --1.2 --1.4 --1.6 --1.8 PARC (dB) 21 Gps, POWER GAIN (dB) 34 ηD IRL, INPUT RETURN LOSS (dB) 38 22 ACPR (dBc) 23 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 80 Watts Avg. --10 VDD = 28 Vdc, Pout = 320 W (PEP), IDQ = 1400 mA Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 940 MHz IM3--U --30 IM3--L IM5--U --40 IM5--L --50 --60 IM7--U IM7--L 1 10 100 TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing 19 18 17 16 0 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR --1 40 30 --3 dB = 132 W 50 70 --25 35 --4 --5 45 PARC --2 dB = 95 W --3 --20 Gps --1 dB = 67 W --2 50 ηD 90 110 130 --30 --35 ACPR (dBc) 20 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 21 1 ηD, DRAIN EFFICIENCY (%) 22 --40 25 --45 20 --50 150 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT09S282NR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 21 20 940 MHz 920 MHz 960 MHz 0 50 --10 ηD 40 Gps 19 60 960 MHz 30 940 MHz 920 MHz 18 20 960 MHz ACPR 17 920 MHz 940 MHz 0 300 16 1 10 10 100 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD, DRAIN EFFICIENCY (%) 22 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 23 20 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 10 GAIN (dB) 19 0 Gain --10 17 IRL (dB) 21 --20 15 IRL 13 --30 11 700 800 900 1000 1100 1200 1300 1400 --40 1500 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT09S282NR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource (Ω) Zin (Ω) Zload (1) (Ω) Max Linear Gain (dB) (dBm) 920 1.83 - j3.18 1.66 + j3.17 4.55 - j3.27 18.7 940 2.01 - j3.27 2.03 + j3.31 4.97 - j2.86 960 2.64 - j3.34 2.55 + j3.45 5.77 - j1.78 P3dB (W) ηD (%) AM/PM (°) (dBm) (W) ηD (%) AM/PM (°) 56.0 396 53.5 -8.0 56.9 494 58.2 -12 18.7 55.9 391 54.4 -7.7 56.9 490 57.6 -11 18.4 55.9 391 53.9 -7.9 56.9 488 57.8 -12 (1) Load impedance for optimum P1dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Figure 8. Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency (1) P1dB Max Linear Gain (dB) (dBm) P3dB (W) ηD (%) AM/PM (°) (dBm) (W) ηD (%) AM/PM (°) f (MHz) Zsource (Ω) Zin (Ω) 920 1.83 - j3.18 1.70 + j3.02 1.49 - j1.61 22.0 53.5 225 66.2 -15 54.3 267 69.6 -22 940 2.01 - j3.27 2.12 + j3.16 1.48 - j1.80 22.0 53.3 215 66.6 -16 54.0 248 70.1 -24 960 2.64 - j3.34 2.66 + j3.26 1.76 - j1.79 21.7 53.6 230 67.4 -15 54.3 269 70.6 -22 Zload (Ω) (1) Load impedance for optimum P1dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning AFT09S282NR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz 0 0 --0.5 --0.5 55 --1.5 54.5 E --2 --1 55.5 IMAGINARY (Ω) IMAGINARY (Ω) --1 54 --2.5 P 51.5 --3.5 --4 53.5 53 52.5 52 --3 1 64 --2.5 62 60 58 56 54 52 50 P --3 --4 --4.5 0 66 E --2 --3.5 --4.5 3 2 4 5 6 7 0 1 2 3 4 5 6 7 REAL (Ω) REAL (Ω) Figure 10. P1dB Load Pull Output Power Contours (dBm) Figure 11. P1dB Load Pull Efficiency Contours (%) 0 0 --0.5 --0.5 22 --1 --1 21.5 --1.5 21 20.5 20 E --2 19.5 19 18.5 IMAGINARY (Ω) IMAGINARY (Ω) --1.5 18 --2.5 P --3 --1.5 --4 --4 18.5 0 1 2 3 4 5 6 7 --24 --3 --3.5 --4.5 --8 --16 --2.5 --3.5 --4.5 E --2 --18 --14 --12 P --10 --20 --22 0 1 2 3 4 5 6 REAL (Ω) REAL (Ω) Figure 12. P1dB Load Pull Gain Contours (dB) Figure 13. P1dB Load Pull AM/PM Contours (°) NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 7 Power Gain Drain Efficiency Linearity Output Power AFT09S282NR3 8 RF Device Data Freescale Semiconductor, Inc. 1 1 0 0 IMAGINARY (Ω) IMAGINARY (Ω) P3dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz --1 55.5 56 E --2 56.5 P 55 --4 0 2 1 E --2 68 66 64 P 62 60 58 56 --3 54.5 54 53.5 53 52.5 --3 --1 54 52 --4 3 4 5 6 7 0 2 1 3 4 5 6 7 REAL (Ω) REAL (Ω) Figure 14. P3dB Load Pull Output Power Contours (dBm) Figure 15. P3dB Load Pull Efficiency Contours (%) 1 1 --6 0 --8 0 --1 20 E --2 19.5 19 18.5 18 17.5 17 IMAGINARY (Ω) IMAGINARY (Ω) --10 16 16.5 P --3 --1 --12 --14 --16 E --2 P --22 --18 --20 --3 --4 --4 0 1 2 4 3 5 6 7 0 1 2 3 4 5 6 REAL (Ω) REAL (Ω) Figure 16. P3dB Load Pull Gain Contours (dB) Figure 17. P3dB Load Pull AM/PM Contours (°) NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 7 Power Gain Drain Efficiency Linearity Output Power AFT09S282NR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS AFT09S282NR3 10 RF Device Data Freescale Semiconductor, Inc. AFT09S282NR3 RF Device Data Freescale Semiconductor, Inc. 11 AFT09S282NR3 12 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2012 Description • Initial Release of Data Sheet AFT09S282NR3 RF Device Data Freescale Semiconductor, Inc. 13 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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