Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P9040N
Rev. 1, 10/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
Driver Application — 900 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
920 MHz
18.9
18.9
--49.6
940 MHz
19.1
19.5
--50.1
960 MHz
19.1
19.9
--48.8
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
728--960 MHz, 4.0 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF8P9040NR1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 42 Watts CW
Driver Application — 700 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
728 MHz
19.9
18.7
--49.9
748 MHz
20.1
19.1
--50.0
768 MHz
20.0
19.5
--49.9
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
CASE 1487--05, STYLE 1
TO--270 WB--4 GULL
PLASTIC
MRF8P9040GNR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF8P9040NBR1
RFinA/VGSA 3
2 RFoutA/VDSA
RFinB/VGSB 4
1 RFoutB/VDSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case (4)
Case Temperature 77°C, 4.0 W CW, 28 Vdc, IDQ = 320 mA, 960 MHz
Case Temperature 81°C, 40 W CW, 28 Vdc, IDQ = 320 mA, 960 MHz
RθJC
Unit
°C/W
1.5
1.3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 170 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 320 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.55 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics (4)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
(continued)
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
17.5
19.1
20.5
dB
Drain Efficiency
ηD
18.0
19.9
—
%
ACPR
—
--48.8
--46.0
dBc
IRL
—
--13
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
920 MHz
18.9
18.9
--49.6
--12
940 MHz
19.1
19.5
--50.1
--13
960 MHz
19.1
19.9
--48.8
--13
Typical Performances (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, 920--960 MHz Bandwidth
Characteristic
Pout @ 1 dB Compression Point, CW
Symbol
Min
Typ
Max
Unit
P1dB
—
42
—
W
—
22
—
70
—
IMD Symmetry @ 45 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
Gain Flatness in 40 MHz Bandwidth @ Pout = 4.0 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.016
—
dB/°C
∆P1dB
—
0.001
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MHz
Typical Broadband Performance — 700 MHz (1) (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA,
Pout = 4.0 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
728 MHz
19.9
18.7
--49.9
--14
748 MHz
20.1
19.1
--50.0
--15
768 MHz
20.0
19.5
--49.9
--12
1. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
3
C3
C5
C4
C6
B1
CUT OUT AREA
C1
C12
C2
C9
C10
C11
MRF8P9040N/NB
Rev 1
C7
C8
Figure 2. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Ferrite Bead
MPZ2012S300AT000
TDK
C1, C4, C5, C7, C11
51 pF Chip Capacitors
ATC100B510GT500XT
ATC
C2
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C3
2.2 μF, 50 V Chip Capacitor
C3225X7R1H225KT
TDK
C6, C8
10 μF, 50 V Chip Capacitors
293D106X9050E2TE3
Vishay
C9
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C10
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C12
220 μF, 63 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
PCB
0.030″, εr = 3.5
RO4350B
Rogers
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
5
18
ηD
Single--Carrier W--CDMA, 3.84 MHz 16
Channel Bandwidth, Input Signal
14
PAR = 7.5 dB @ 0.01% Probability
--47
on CCDF
--48
18.5
18
Gps
17.5
PARC
17
--49
16.5
ACPR
16
15.5
15
820
--50
--51
IRL
840
860
880
900
0
--52
920
940
960
--3
--6
--9
--12
--15
980
0.1
0
--0.1
--0.2
--0.3
PARC (dB)
20
IRL, INPUT RETURN LOSS (dB)
19
Gps, POWER GAIN (dB)
22
VDD = 28 Vdc, Pout = 4.0 W (Avg.), IDQ = 320 mA
19.5
ACPR (dBc)
20
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--0.4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 4.0 Watts Avg.
--20
IM3--L
--30
IM3--U
--40
IM5--U
--50
IM7--U
--60
--70
IM5--L
IM7--L
VDD = 28 Vdc, Pout = 45 W (PEP)
IDQ = 320 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
1
10
100
TWO--TONE SPACING (MHz)
20
0
19
18
17
16
15
VDD = 28 Vdc, IDQ = 320 mA, f = 940 MHz
Single--Carrier W--CDMA
ηD
60
0
50
--10
--1 dB = 11 W
--1
ACPR
--2 dB = 14 W
40
--2
30
--3
--3 dB = 20 W
--4
--5
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
0
8
16
24
20
Gps
--20
--30
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
10
--50
0
--60
PARC
32
40
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
19
920 MHz
18
ηD
940 MHz 960 MHz
ACPR
Input Signal PAR = 7.5 dB
17 @ 0.01% Probability
on CCDF
60
0
50
--10
40
30
16
20
960 MHz
Gps
940 MHz
920 MHz
15
0
100
14
1
10
10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 320 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
ηD, DRAIN EFFICIENCY (%)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
Gain
--3
16
--6
12
--9
IRL
8
--12
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 320 mA
4
0
750
850
800
IRL (dB)
GAIN (dB)
20
--15
900
950
1000
1050
1100
--18
1150
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
6.33 -- j6.70
6.02 -- j0.61
840
6.46 -- j6.14
5.89 + j0.00
860
6.47 -- j5.83
5.80 + j0.44
880
6.15 -- j5.53
5.59 + j0.73
900
5.77 -- j5.09
5.31 + j1.05
920
5.53 -- j4.65
5.13 + j1.44
940
5.39 -- j4.29
5.06 + j1.84
960
5.30 -- j3.95
5.03 + j2.28
980
5.26 -- j3.54
4.99 + j2.78
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 320 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
53
Ideal
Pout, OUTPUT POWER (dBm)
52
51
960 MHz
50
49
Actual
48
47
920 MHz
960 MHz
46
940 MHz
940 MHz
920 MHz
45
44
43
42
24
25
26
27
28
31
30
29
32
33
34
35
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
65
48.1
79
49.0
940
65
48.1
76
48.8
960
63
48.0
74
48.7
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
4.03 -- j5.45
2.24 + j0.08
940
P1dB
4.63 -- j6.15
2.21 + j0.35
960
P1dB
5.57 -- j5.96
2.36 + j0.47
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
9
C3
C5
C4
C6
B1
CUT OUT AREA
C13
C1
C12
C2
C9
C10
C11
MRF8P9040N/NB
Rev 1
C7
C8
Figure 13. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout — 728--768 MHz
Table 7. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 728--768 MHz
Part
Description
Part Number
Manufacturer
B1
RF Ferrite Bead
MPZ2012S300AT000
TDK
C1, C4, C5, C7, C11
82 pF Chip Capacitors
ATC100B820JT500XT
ATC
C2, C9
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C3
2.2 μF, 50 V Chip Capacitor
C3225X7R1H225KT
TDK
C6, C8
10 μF, 50 V Tantalum Capacitors
293D106X9050E2TE3
Vishay
C10
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C12
220 μF, 63 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
C13
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
PCB
0.030″, εr = 3.5
RO4350B
Rogers
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 728--768 MHz
PARC
19.6
19.2
18.4
18
710
730
--49
--9
--49.2
--10
--49.6
--49.8
IRL
720
14
--49.4
ACPR
18.8
16
--11
--12
--13
--50
740
750
760
770
780
--14
790
0.1
0
--0.1
--0.2
--0.3
PARC (dB)
Gps
20
18
IRL, INPUT RETURN LOSS (dB)
20.4
20
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD
20.8
ηD, DRAIN
EFFICIENCY (%)
21.2
Gps, POWER GAIN (dB)
22
VDD = 28 Vdc, Pout = 4.0 W (Avg.), IDQ = 320 mA
21.6
ACPR (dBc)
22
--0.4
f, FREQUENCY (MHz)
Figure 14. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 4.0 Watts Avg.
ηD
20
ACPR
728 MHz
19
748 MHz 768 MHz
60
0
50
--10
40
30
18
20
728 MHz
748 MHz
17
Gps
10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 320 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Input
21 Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
--50
768 MHz
0
100
16
1
10
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
Gain
--3
16
--6
12
--9
IRL
8
4
0
550
--12
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 320 mA
600
650
IRL (dB)
GAIN (dB)
20
--15
700
750
800
850
900
--18
950
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
11
VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
710
4.33 -- j2.57
6.05 + j1.24
720
4.23 -- j2.28
6.05 + j1.52
730
4.17 -- j1.99
6.10 + j1.81
740
4.15 -- j1.74
6.23 + j2.10
750
4.15 -- j1.53
6.45 + j2.36
760
4.13 -- j1.37
6.72 + j2.54
770
4.09 -- j1.24
7.02 + j2.64
780
4.02 -- j1.10
7.28 + j2.67
790
3.91 -- j0.93
7.47 + j2.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance — 728--768 MHz
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
13
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
14
RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
15
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
16
RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
17
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
18
RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
19
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
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RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
RF Device Data
Freescale Semiconductor
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2010
• Initial Release of Data Sheet
1
Oct. 2010
• Added part number MRF8P9040GNR1, ISO and Case Outline 1487--05, p. 1, 19--21
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
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RF Device Data
Freescale Semiconductor
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MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
Document
Number:
RF
Device
Data MRF8P9040N
Rev. 1, 10/2010
Freescale
Semiconductor
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