Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 2025 MHz 16.0 44.3 7.8 --33.5 1880 MHz • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.2 43.5 7.6 --30.8 1900 MHz 16.1 43.4 7.6 --32.6 1920 MHz 15.8 42.9 7.6 --34.6 GSM EDGE • Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg. Frequency Gps (dB) ηD (%) SR1 @ 400 kHz (dBc) SR2 @ 600 kHz (dBc) EVM (% rms) 1805 MHz 17.1 43.8 --58.4 --74.4 3.0 1840 MHz 17.3 42.4 --60.0 --75.5 2.6 1880 MHz 17.1 41.7 --60.5 --75.3 2.4 Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8P20100HR3 MRF8P20100HSR3 1805--2025 MHz, 20 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465M--01, STYLE 1 NI--780--4 MRF8P20100HR3 CASE 465H--02, STYLE 1 NI--780S--4 MRF8P20100HSR3 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections MRF8P20100HR3 MRF8P20100HSR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C EDGE 120 0.6 W (PEP) W (PEP)/°C Symbol Value (2,3) Unit EDGE Operation @ TC = 25°C (1) Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 74°C, 20 W CW, 2025 MHz 28 Vdc, IDQA = 400 mA 28 Vdc, VGSB = 1.3 Vdc Case Temperature 80°C, 42 W CW, 1805 MHz 28 Vdc, IDQA = IDQB = 330 mA RθJC °C/W 0.88 0.88 0.59 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 75 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 400 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.7 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) MRF8P20100HR3 MRF8P20100HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 15.0 16.0 18.0 dB Drain Efficiency ηD 42.0 44.3 — % PAR 7.2 7.8 — dB ACPR — --33.5 --31.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, 2010--2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 78 — W Pout @ 3 dB Compression Point, CW P3dB — 126 — W — 46 — IMD Symmetry @ 20 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 53 — MHz Gain Flatness in 15 MHz Bandwidth @ Pout = 20 W Avg. GF — 0.1 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.013 — dB/°C ∆P1dB — 0.004 — dBm/°C Output Power Variation over Temperature (--30°C to +85°C) MHz Typical Broadband Performance — 1880 MHz (2) (In Freescale 1880 MHz Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.2 43.5 7.6 --30.8 1900 MHz 16.1 43.4 7.6 --32.6 1920 MHz 15.8 42.9 7.6 --34.6 Typical GSM EDGE Performance (3) (In Freescale Class AB Test Fixture, 50 ohm system) VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg., 1805--1880 MHz EDGE Modulation Frequency Gps (dB) ηD (%) SR1 @ 400 kHz (dBc) SR2 @ 600 kHz (dBc) EVM (% rms) 1805 MHz 17.1 43.8 --58.4 --74.4 3.0 1840 MHz 17.3 42.4 --60.0 --75.5 2.6 1880 MHz 17.1 41.7 --60.5 --75.3 2.4 1. Part internally matched both on input and output. 2. Measurement made with device in a Symmetrical Doherty configuration. 3. Measurement made with device in quadrature combined configuration. MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 3 VGSA C19 B1 VDSA R2 MRF8P20100 Rev. 1 C15 C5 C17 C13 C3 R4 C1 C9 C7 C8 R1 C2 C4 R5 C C11 C12 P CUT OUT AREA Z1 C10 C14 C18 C6 VGSB R3 C16 B2 C20 VDSB Figure 2. MRF8P20100HR3(HSR3) Test Circuit Component Layout Table 5. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 RF Ferrite Beads MPZ2012S300AT000 TDK C1, C2, C3, C4, C5, C6 15 pF Chip Capacitors ATC600F150JT250XT ATC C7, C8 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC C9, C10 1.2 pF Chip Capacitors ATC600F1R2BT250XT ATC C11, C12 10 pF Chip Capacitors ATC600F100JT250XT ATC C13, C14 4.7 μF, 50 V Chip Capacitors C4532X5R1H475MT TDK C15, C16 10 μF, 50 V Chip Capacitors C5750X7R1H106KT TDK C17, C18 22 μF, 50 V Chip Capacitors C5750KF1H226ZT TDK C19, C20 220 μF, 63 V Electrolytic Capacitors MCGPR63V227M10X21 Multicomp R1 50 Ω, 4 W Chip Resistor ATCCW12010T0050GBK ATC R2, R3 10 KΩ, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay R4, R5 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay Z1 1900 MHz Band 90°, 3 dB Chip Hybrid Coupler 1P503S Anaren PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8P20100HR3 MRF8P20100HSR3 4 RF Device Data Freescale Semiconductor Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 5 Gps, POWER GAIN (dB) 16.4 44 VDD = 28 Vdc, Pout = 20 W (Avg.), IDQA = 400 mA 16.1 15.8 VGSB = 1.3 Vdc, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF Gps 15.5 ACPR 15.2 42 40 38 --25 --5 --27 --10 14.9 --29 14.6 --31 IRL 14.3 14 1880 --33 PARC 1900 1920 1940 1960 1980 2000 --35 2040 2020 --15 --20 --25 --30 --1.5 --1.7 --1.9 --2.1 --2.3 PARC (dB) ηD IRL, INPUT RETURN LOSS (dB) 46 ACPR (dBc) 17 16.7 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 20 Watts Avg. --20 VDD = 28 Vdc, Pout = 20 W (PEP) IDQA = 400 mA, VGSB = 1.3 Vdc --30 IM3--U IM3--L Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2017.5 MHz --40 IM5--U --50 IM5--L IM7--L --60 IM7--U --70 1 10 100 TWO--TONE SPACING (MHz) 16.5 --1 16 15.5 15 14.5 14 --1 dB = 9 W --2 --25 50 --30 40 ACPR --2 dB = 17.5 W --3 ηD --3 dB = 26 W Gps --4 30 20 --5 --6 60 0 PARC VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc f = 2017.5 MHz, Single--Carrier W--CDMA, 3.84 MHz 10 Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 10 20 30 50 40 --35 --40 ACPR (dBc) 0 ηD, DRAIN EFFICIENCY (%) 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing --45 --50 --55 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8P20100HR3 MRF8P20100HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps 16 15 2010 MHz ηD ACPR 2025 MHz 2017.5 MHz 2025 MHz 1 --10 40 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 12 50 20 2017.5 MHz 13 0 30 2010 MHz 14 60 0 100 10 --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel 17 Bandwidth ηD, DRAIN EFFICIENCY (%) 18 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 Gain --4 GAIN (dB) 12 VDD = 28 Vdc Pin = 0 dBm IDQA = 400 mA VGSB = 1.3 Vdc 9 6 --8 --12 IRL (dB) 15 --16 IRL 3 --20 0 1800 1835 1870 1905 1940 1975 2010 2045 --24 2080 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W--CDMA TEST SIGNAL 10 100 0 --10 --30 Input Signal 0.1 0.01 0 2 4 6 --40 --50 --60 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 12 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single--Carrier W--CDMA Spectrum MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 W Avg. f MHz Zsource Ω Zload Ω 1880 3.23 -- j10.1 6.35 -- j5.32 1900 3.36 -- j9.78 6.64 -- j5.29 1920 3.42 -- j9.61 6.86 -- j5.42 1940 3.33 -- j9.44 6.94 -- j5.64 1960 3.22 -- j9.16 6.99 -- j5.82 1980 3.31 -- j8.90 7.17 -- j6.03 2000 3.48 -- j8.87 7.33 -- j6.46 2020 3.39 -- j8.92 7.10 -- j6.92 2040 3.13 -- j8.58 6.64 -- j6.97 Note: Measured with Peaking side open. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 11. Series Equivalent Source and Load Impedance — Carrier Side VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 W Avg. f MHz Zsource Ω Zload Ω 1880 3.83 -- j10.28 0.67 -- j7.03 1900 3.88 -- j10.00 0.68 -- j6.71 1920 3.82 -- j9.81 0.62 -- j6.43 1940 3.61 -- j9.59 0.48 -- j6.11 1960 3.50 -- j9.30 0.35 -- j5.70 1980 3.58 -- j9.10 0.35 -- j5.32 2000 3.61 -- j9.13 0.35 -- j5.07 2020 3.43 -- j9.10 0.21 -- j4.75 2040 3.10 -- j8.55 0.10 -- j4.19 Note: Measured with Carrier side open. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance — Peaking Side MRF8P20100HR3 MRF8P20100HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQA = 400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 55 Ideal Pout, OUTPUT POWER (dBm) 53 51 2010 MHz 49 Actual 47 2010 MHz 45 2025 MHz 2025 MHz 43 41 39 37 35 33 15 17 19 21 23 27 25 29 31 33 35 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2010 62 47.9 76 48.8 2025 63 48.0 78 48.9 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 2010 P1dB 2.83 -- j12.46 3.18 -- j6.16 2025 P1dB 3.43 -- j13.20 3.16 -- j6.14 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 9 ALTERNATE CHARACTERIZATION — 1880 MHz C18 B1 MRF8P20100 Rev. 2 C16 C5 C14 C12 VDSA -- VGSA C3 C9 C1 R1 Z1 C7* C C11 C8* R3 C2 C4 CUT OUT AREA R2 P C8 C10 C13 C15 -- C6 C17 B2 VGSB VDSB C19 *C7 and C8 are mounted vertically. Figure 14. MRF8P20100HR3(HSR3) Test Circuit Component Layout — 1880 MHz Table 6. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values — 1880 MHz Part Description Part Number Manufacturer B1, B2 RF Ferrite Beads MPZ2012S300AT000 TDK C1, C2, C3, C4, C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC C7, C8 10 pF Chip Capacitors ATC600F100JT250XT ATC C9, C10, C11 1.5 pF Chip Capacitors ATC600F1R5BT250XT ATC C12, C13 4.7 μF, 50 V Chip Capacitors C4532X5R1H475MT TDK C14, C15 10 μF, 50 V Chip Capacitors C5750X7R1H106KT TDK C16, C17 22 μF, 50 V Chip Capacitors C5750KF1H226ZT TDK C18, C19 220 μF, 63 V Electrolytic Capacitors MCGPR63V227M10X21 Multicomp R1, R2 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay R3 50 Ω, 4 W Chip Resistor CW12010T0050GBK ATC Z1 1900 MHz Band 90°, 3 dB Chip Hybrid Coupler 1P503S Anaren PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8P20100HR3 MRF8P20100HSR3 10 RF Device Data Freescale Semiconductor 42 15.8 40 ηD 15.4 Input Signal PAR = 9.9 dB @ 0.01% Probability 15 on CCDF 38 Gps 14.6 IRL 14.2 --28 --5 --30 --10 --32 PARC --34 13.8 13.4 13 1880 1900 1920 ACPR --36 1940 --38 2040 1960 1980 2000 2020 --15 --20 --25 --30 --2 --2.1 --2.2 --2.3 --2.4 PARC (dB) 16.2 44 IRL, INPUT RETURN LOSS (dB) 46 ηD, DRAIN EFFICIENCY (%) 17 VDD = 28 Vdc, Pout = 20 W (Avg.), IDQA = 400 mA, VGSB = 1.3 Vdc 16.6 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ACPR (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS — 1880 MHz --2.5 f, FREQUENCY (MHz) Figure 15. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 20 Watts Avg. 15 50 --10 Gps ACPR 40 1880 MHz 14 0 ηD 1900 MHz 1920 MHz 30 1880 MHz 1900 MHz 1920 MHz 13 12 20 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 11 1 10 10 0 100 --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) 16 60 VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA ηD, DRAIN EFFICIENCY (%) 17 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 16. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 --3 Gain 12 --6 9 --9 IRL 6 0 1800 --12 VDD = 28 Vdc Pin = 0 dBm IDQA = 400 mA VGSB = 1.3 Vdc 3 1835 1870 1905 IRL (dB) GAIN (dB) 15 1940 1975 --15 2010 2045 --18 2080 f, FREQUENCY (MHz) Figure 17. Broadband Frequency Response MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 11 VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 W Avg. f MHz Zsource Ω Zload Ω 1880 2.22 -- j7.34 6.32 -- j6.84 1900 2.27 -- j7.04 6.13 -- j6.84 1920 2.35 -- j6.75 5.91 -- j6.87 1940 2.41 -- j6.52 5.61 -- j6.97 1960 2.40 -- j6.33 5.25 -- j7.09 1980 2.42 -- j6.19 4.95 -- j7.22 2000 2.45 -- j6.17 4.62 -- j7.41 2020 2.34 -- j6.19 4.09 -- j7.46 2040 2.15 -- j5.91 3.56 -- j7.08 Note: Measured with Peaking side open. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 18. Series Equivalent Source and Load Impedance — Carrier Side — 1880 MHz VDD = 28 Vdc, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 W Avg. f MHz Zsource Ω Zload Ω 1880 2.67 -- j6.62 0.50 -- j3.80 1900 2.71 -- j6.34 0.66 -- j3.23 1920 2.76 -- j6.11 0.88 -- j2.69 1940 2.69 -- j5.98 1.10 -- j2.22 1960 2.62 -- j5.84 1.36 -- j1.80 1980 2.58 -- j5.76 1.66 -- j1.45 2000 2.50 -- j5.75 2.03 -- j1.17 2020 2.29 -- j5.63 2.37 -- j0.98 2040 2.11 -- j5.23 2.64 -- j0.79 Note: Measured with Carrier side open. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 19. Series Equivalent Source and Load Impedance — Peaking Side — 1880 MHz MRF8P20100HR3 MRF8P20100HSR3 12 RF Device Data Freescale Semiconductor ALTERNATE CHARACTERIZATION — GSM EDGE VDDA C9 C1 VGSA C11 C10 C23 R4 C2 Z1 C3 R2 C5 R3 C6 C8 C12 C13 C14 C4 C7 CUT OUT AREA R1 U L C17 C18 C19 Z2 C15 C16 C20 C24 MRF8P20100 Rev. 0 VGSB C21 C22 VDDB Figure 20. MRF8P20100HR3(HSR3) Test Circuit Component Layout — GSM EDGE Table 7. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values — GSM EDGE Part Description Part Number Manufacturer C1, C8 2.2 μF, 50 V Chip Capacitors C3225X7R2A225KT TDK C2, C7 12 pF Chip Capacitors ATC600F120JT250XT ATC C3, C6 2.7 pF Chip Capacitors ATC600F2R7BT250XT ATC C4, C5, C11, C20 15 pF Chip Capacitors ATC600F150JT250XT ATC C9, C22 10 μF, 50 V Chip Capacitors C5750X7R1H106K TDK C10, C21 4.7 μF, 50 V Chip Capacitors C4532X5R1H475M TDK C12, C19 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC C13, C18 22 pF Chip Capacitors ATC600F220JT250XT ATC C14, C17 0.6 pF Chip Capacitors ATC600F0R6BT250XT ATC C15, C16 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC C23, C24 220 pF, 63 V Electrolytic Capacitors MCGPR63V227M10X21 Multicomp R1 50 Ω, 4 W Chip Resistor CW12010T0050GBK ATC R2, R3 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay R4 50 Ω, 80 W, Termination SMT3725ALNF EMC Z1, Z2 1900 MHz Band 90°, 3 dB Chip Hybrid Couplers XC1900E--03 Anaren PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 13 TYPICAL CHARACTERISTICS — GSM EDGE 18 Gps, POWER GAIN (dB) 17.2 38 37 16.8 Gps 16.4 16 VDD = 28 Vdc, Pout = 42 W (Avg.) IDQA = IDQB = 330 mA EDGE Modulation IRL 15.6 15.2 36 3.5 3 2.5 EVM 14.8 2 1.5 14.4 14 1760 1780 1800 1820 1840 1860 1880 1900 1 1920 --18 --20 --22 --24 --26 --28 IRL, INPUT RETURN LOSS (dB) 39 ηD EVM, ERROR VECTOR MAGNITUDE (% rms) 17.6 ηD, DRAIN EFFICIENCY (%) 40 f, FREQUENCY (MHz) Figure 21. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 42 Watts Avg. 18 60 Gps 50 16 1805 MHz 15 1840 MHz 40 1880 MHz 30 14 VDD = 28 Vdc IDQA = IDQB = 330 mA 13 ηD 1880 MHz 20 1840 MHz 1805 MHz 10 12 1 0 300 100 10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17 Pout, OUTPUT POWER (WATTS) CW Figure 22. Power Gain and Drain Efficiency versus Output Power 5 --35 VDD = 28 Vdc IDQA = IDQB = 330 mA EDGE Modulation SPECTRAL REGROWTH @ 400 kHz (dBc) EVM, ERROR VECTOR MAGNITUDE (% rms) 6 Pout = 53 W Avg. 4 3 35 W Avg. 2 17 W Avg. 1 0 1780 VDD = 28 Vdc IDQA = IDQB = 330 mA EDGE Modulation --40 --45 --50 1805 MHz --55 1840 MHz 1880 MHz --60 --65 --70 1800 1820 1840 1860 f, FREQUENCY (MHz) Figure 23. EVM versus Frequency 1880 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) Figure 24. Spectral Regrowth at 400 kHz versus Output Power MRF8P20100HR3 MRF8P20100HSR3 14 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — GSM EDGE VDD = 28 Vdc IDQA = IDQB = 330 mA EDGE Modulation --55 --60 1805 MHz --65 1840 MHz 1880 MHz --70 --75 --80 0 20 60 40 80 100 120 8 EVM 1840 MHz 1805 MHz 4 36 24 1880 MHz 1840 MHz 2 12 1805 MHz 0 1 10 100 0 300 Pout, OUTPUT POWER (WATTS) AVG. Figure 25. Spectral Regrowth at 600 kHz versus Output Power Figure 26. EVM and Drain Efficiency versus Output Power 0 18 15 --6 Gain --12 12 GAIN (dB) 48 ηD 1880 MHz 6 Pout, OUTPUT POWER (WATTS) 9 --18 IRL --24 6 VDD = 28 Vdc Pin = 0 dBm IDQA = IDQB = 330 mA 3 0 1450 60 VDD = 28 Vdc IDQA = IDQB = 330 mA EDGE Modulation IRL (dB) --50 10 ηD, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) SPECTRAL REGROWTH @ 400 kHz (dBc) --45 1615 1780 1945 2110 --30 2275 2440 2605 --36 2770 f, FREQUENCY (MHz) Figure 27. Broadband Frequency Response MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 15 VDD = 28 Vdc, IDQA = IDQB = 330 mA, Pout = 42 W Avg. f MHz Zsource Ω Zload Ω 1760 3.12 -- j7.74 4.39 -- j7.66 1780 3.13 -- j7.35 4.44 -- j7.38 1800 3.21 -- j7.12 4.50 -- j7.30 1820 3.20 -- j7.05 4.42 -- j7.31 1840 3.08 -- j6.98 4.26 -- j7.28 1860 2.95 -- j6.82 4.10 -- j7.15 1880 2.88 -- j6.57 4.00 -- j6.92 1900 2.87 -- j6.21 3.95 -- j6.62 1920 2.89 -- j5.85 3.94 -- j6.36 Note: Measured with Lower side open. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 28. Series Equivalent Source and Load Impedance — Upper Side — GSM EDGE VDD = 28 Vdc, IDQA = IDQB = 330 Vdc, Pout = 42 W Avg. f MHz Zsource Ω Zload Ω 1760 3.72 -- j7.89 3.55 -- j5.43 1780 3.77 -- j7.60 3.62 -- j5.09 1800 3.82 -- j7.48 3.76 -- j4.85 1820 3.72 -- j7.46 3.87 -- j4.75 1840 3.55 -- j7.37 3.90 -- j4.66 1860 3.39 -- j7.16 3.92 -- j4.52 1880 3.29 -- j6.85 3.96 -- j4.31 1900 3.24 -- j6.48 4.03 -- j4.02 1920 3.22 -- j6.17 4.13 -- j3.71 Note: Measured with Upper side open. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 29. Series Equivalent Source and Load Impedance — Lower Side — GSM EDGE MRF8P20100HR3 MRF8P20100HSR3 16 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 17 MRF8P20100HR3 MRF8P20100HSR3 18 RF Device Data Freescale Semiconductor MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 19 MRF8P20100HR3 MRF8P20100HSR3 20 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2010 Description • Initial Release of Data Sheet MRF8P20100HR3 MRF8P20100HSR3 RF Device Data Freescale Semiconductor 21 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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