Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable for use in CW and pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) 250 Peak 1300 22.7 57.0 --18 Signal Type Pulsed (200 μsec, 10% Duty Cycle) 1300 MHz, 250 W, 50 V LATERAL N--CHANNEL RF POWER MOSFETs • Typical CW Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 61°C Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) CW 230 CW 1300 20.0 53.0 --25 • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 20 V to 50 V for Extended Power Range • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. CASE 465--06, STYLE 1 NI--780 MRF6V13250HR3 CASE 465A--06, STYLE 1 NI--780S MRF6V13250HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +120 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C Case Operating Temperature Operating Junction Temperature (1,2) Total Device Dissipation @ TC = 25°C Derate above 25°C TJ 225 °C PD 476 2.38 W W/°C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz CW: Case Temperature 77°C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz °C/W ZθJC RθJC 0.07 0.42 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 1 μAdc 120 — — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 640 μAdc) VGS(th) 1.0 1.8 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.4 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.58 Adc) VDS(on) 0.1 0.25 0.3 Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 58 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 340 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz Pulsed, 200 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 21.5 22.7 24.0 dB Drain Efficiency ηD 53.5 57.0 — % Input Return Loss IRL — --18 --9 dB Typical CW Performance (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 230 W CW, f = 1300 MHz, TC = 61°C Power Gain Gps — 20.0 — dB Drain Efficiency ηD — 53.0 — % Input Return Loss IRL — --25 — dB Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle VSWR 10:1 at all Phase Angles Ψ No Degradation in Output Power 1. Part internally input matched. MRF6V13250HR3 MRF6V13250HSR3 2 RF Device Data Freescale Semiconductor R1 VBIAS Z19 Z10 + C1 C2 C3 C4 C7 Z18 C8 C9 C10 C11 C12 Z9 RF INPUT Z11 Z1 VSUPPLY + + Z2 Z3 Z4 Z5 Z6 Z7 Z12 Z13 Z14 Z15 Z16 C6 Z8 C5 Z17 RF OUTPUT DUT Z20 Z21 + C18 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9* Z10 0.447″ x 0.063″ Microstrip 0.030″ x 0.084″ Microstrip 0.120″ x 0.063″ Microstrip 0.855″ x 0.293″ Microstrip 0.369″ x 0.825″ Microstrip 0.203″ x 0.516″ Microstrip 0.105″ x 0.530″ Microstrip 0.105″ x 0.530″ Microstrip 0.116″ x 0.050″ Microstrip 0.122″ x 0.050″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18, Z20 Z19*, Z21* C17 C16 C15 C14 VSUPPLY C13 0.162″ x 1.160″ Microstrip 0.419″ x 1.160″ Microstrip 0.468″ x 0.994″ Microstrip 0.131″ x 0.472″ Microstrip 0.264″ x 0.222″ Microstrip 0.500″ x 0.111″ Microstrip 0.291″ x 0.063″ Microstrip 0.105″ x 0.388″ Microstrip 0.854″ x 0.052″ Microstrip *Line length includes microstrip bends. Figure 1. MRF6V13250HR3(HSR3) Test Circuit Schematic — 1300 MHz Table 5. MRF6V13250HR3(HSR3) Test Circuit Component Designations and Values — 1300 MHz Part Description Part Number Manufacturer C1, C2 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C3, C11, C14 0.1 μF, 50 V Chip Capacitors CDR33BX104AKWS AVX C4, C6, C7, C18 100 pF Chip Capacitors ATC800B101JT500XT ATC C5 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C8, C17 1000 pF Chip Capacitors ATC100B102JT50XT ATC C9, C16 1000 pF Chip Capacitors ATC700B102FT50XT ATC C10, C15 10K pF Chip Capacitors ATC200B103KT50XT ATC C12, C13 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1 15 Ω, 1/4 W Chip Resistor CRCW120615R0FKEA Vishay PCB 0.030″, εr = 3.50 RO4350B Rogers MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 3 C1 C2 C5 C7 C4 R1 C9 C8 C11 C12 C10 C6 CUT OUT AREA C3 C18 C17 MRF6V13250H/HS Rev 3 C15 C13 C16 C14 Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz MRF6V13250HR3 MRF6V13250HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSED 60 Pout, OUTPUT POWER (dBm) PULSED 1000 100 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 10 20 40 30 57 P2dB = 55.1 dBm (326 W) 56 P1dB = 54.7 dBm (293 W) 55 Actual 54 31 30 50 32 33 34 35 36 37 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PULSED Figure 3. Capacitance versus Drain--Source Voltage Figure 4. Pulsed Output Power versus Input Power 70 25 60 23 22 50 21 40 Gps 20 30 20 19 ηD 10 18 17 1 10 0 500 100 21 19 40 V 17 45 V VDD = 50 V 35 V 30 V 15 11 IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 μsec Duty Cycle = 10% 25 V 13 20 V 0 50 100 150 200 250 300 350 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 6. Pulsed Power Gain versus Output Power 24 70 25 V 50 35 V 30 V 45 V 40 V VDD = 50 V 20 V 40 30 IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 μsec Duty Cycle = 10% 20 0 50 100 150 200 250 300 350 VDD = 50 Vdc IDQ = 100 mA f = 1300 MHz Pulse Width = 200 μsec Duty Cycle = 10% 23 Gps, POWER GAIN (dB) 60 10 Gps, POWER GAIN (dB) VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz 23 Pulse Width = 200, μsec Duty Cycle = 10% ηD, DRAIN EFFICIENCY (%) 24 Gps, POWER GAIN (dB) P3dB = 55.4 dBm (345 W) 58 53 0 ηD, DRAIN EFFICIENCY (%) Ideal 22 --30_C 50 40 85_C TC = --30_C 19 30 ηD 25_C 20 25_C 10 18 85_C 17 400 70 60 Gps 21 20 400 ηD, DRAIN EFFICIENCY (%) C, CAPACITANCE (pF) Ciss VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 μsec, Duty Cycle = 10% 59 3 10 100 0 500 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Efficiency versus Output Power Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — CW 25 60 Gps, POWER GAIN (dB) 23 55 10 mA Gps IDQ = 700 mA 50 700 mA 22 21 45 300 mA 300 mA 40 10 mA 20 35 19 30 ηD 18 VDD = 50 Vdc f = 1300 MHz TC = 61°C (1) 17 16 20 40 60 25 ηD, DRAIN EFFICIENCY (%) 24 20 15 80 100 120 140 160 180 200 220 240 260 280 Pout, OUTPUT POWER (WATTS) CW 1. Data for graph was collected in a water cooled test fixture. The water inlet temperature = 25°C. Figure 9. CW Power Gain and Drain Efficiency versus Output Power 109 VDD = 50 Vdc Pout = 230 W CW ηD = 53% MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature — CW MRF6V13250HR3 MRF6V13250HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω Zsource Zload f = 1300 MHz f = 1300 MHz VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak f MHz Zsource Ω Zload Ω 1300 5.32 + j4.11 1.17 + j1.48 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance — Pulsed MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V13250HR3 MRF6V13250HSR3 8 RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 9 MRF6V13250HR3 MRF6V13250HSR3 10 RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF6V13250H and MRF6V13250HS parts will be available for 2 years after release of MRF6V13250H and MRF6V13250HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF6V13250H and MRF6V13250HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 June 2011 • Initial Release of Data Sheet 1 July 2011 • Added CW information to data sheet including: -- Typical Performance Frequency tables, p. 1, 2 -- CW Capable bullet and Thermal Characteristics, p. 1 -- Fig. 9, CW Power Gain and Drain Efficiency versus Output Power, p. 6 -- Fig. 10, MTTF versus Junction Temperature -- CW, p. 6 MRF6V13250HR3 MRF6V13250HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF6V13250HR3 MRF6V13250HSR3 Document Number: RF Device Data MRF6V13250H Rev. 1, 7/2011 Freescale Semiconductor 13