Freescale Semiconductor Technical Data Document Number: MMRF1005H Rev. 1, 4/2015 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MMRF1005HR5 MMRF1005HSR5 RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse applications, such as DME/IFF systems. Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) D (%) IRL (dB) 250 Peak 1300 22.7 57.0 --18 Signal Type Pulse (200 sec, 10% Duty Cycle) 1300 MHz, 250 W, 50 V LATERAL N--CHANNEL RF POWER MOSFETs Typical CW Performance: VDD = 50 Vdc, IDQ = 10 mA, TC = 61C Signal Type Pout (W) f (MHz) Gps (dB) D (%) IRL (dB) CW 230 CW 1300 20.0 53.0 --25 NI--780H--2L MMRF1005HR5 Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 sec Features Characterized with series equivalent large--signal impedance parameters Internally matched for ease of use Qualified up to a maximum of 50 VDD operation Characterized from 20 to 50 V for extended power range Integrated ESD protection Greater negative gate--source voltage range for improved Class C operation In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13--inch reel. NI--780S--2L MMRF1005HSR5 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +120 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C TC 150 C Case Operating Temperature Operating Junction Temperature (1) Total Device Dissipation @ TC = 25C Derate above 25C TJ 225 C PD 476 2.38 W W/C Symbol Value (2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Pulse: Case Temperature 65C, 250 W Peak, 200 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz CW: Case Temperature 77C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz C/W ZJC RJC 0.07 0.42 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Freescale Semiconductor, Inc., 2013, 2015. All rights reserved. RF Device Data Freescale Semiconductor MMRF1005HR5 MMRF1005HSR5 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 1 Adc 120 — — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 20 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 640 Adc) VGS(th) 1.0 1.8 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.4 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.58 Adc) VDS(on) 0.1 0.25 0.3 Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 58 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 340 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz Pulse, 200 sec Pulse Width, 10% Duty Cycle Power Gain Gps 21.5 22.7 24.0 dB Drain Efficiency D 53.5 57.0 — % Input Return Loss IRL — --18 --9 dB Typical CW Performance (In Freescale CW Application Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 230 W CW, f = 1300 MHz, TC = 61C Power Gain Gps — 20.0 — dB Drain Efficiency D — 53.0 — % Input Return Loss IRL — --25 — dB Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz, Pulse, 200 sec Pulse Width, 10% Duty Cycle VSWR 10:1 at all Phase Angles No Degradation in Output Power 1. Part internally input matched. MMRF1005HR5 MMRF1005HSR5 2 RF Device Data Freescale Semiconductor R1 VBIAS Z19 Z10 + C1 C2 C3 C4 Z18 C7 C8 C9 C10 C11 C12 Z9 RF INPUT Z11 Z1 VSUPPLY + + Z2 Z3 Z4 Z5 Z6 Z7 Z12 Z13 Z14 Z15 Z16 C6 Z8 C5 Z17 RF OUTPUT DUT Z20 Z21 + C18 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9* Z10 0.447 x 0.063 Microstrip 0.030 x 0.084 Microstrip 0.120 x 0.063 Microstrip 0.855 x 0.293 Microstrip 0.369 x 0.825 Microstrip 0.203 x 0.516 Microstrip 0.105 x 0.530 Microstrip 0.105 x 0.530 Microstrip 0.116 x 0.050 Microstrip 0.122 x 0.050 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18, Z20 Z19*, Z21* C17 C16 C15 C14 VSUPPLY C13 0.162 x 1.160 Microstrip 0.419 x 1.160 Microstrip 0.468 x 0.994 Microstrip 0.131 x 0.472 Microstrip 0.264 x 0.222 Microstrip 0.500 x 0.111 Microstrip 0.291 x 0.063 Microstrip 0.105 x 0.388 Microstrip 0.854 x 0.052 Microstrip *Line length includes microstrip bends. Figure 1. MMRF1005HR5(HSR5) Test Circuit Schematic — 1300 MHz, Pulse Table 5. MMRF1005HR5(HSR5) Test Circuit Component Designations and Values — 1300 MHz, Pulse Part Description Part Number Manufacturer C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C3, C11, C14 0.1 F, 50 V Chip Capacitors CDR33BX104AKWS AVX C4, C6, C7, C18 100 pF Chip Capacitors ATC800B101JT500XT ATC C5 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C8, C17 1000 pF Chip Capacitors ATC100B102JT50XT ATC C9, C16 1000 pF Chip Capacitors ATC700B102FT50XT ATC C10, C15 10K pF Chip Capacitors ATC200B103KT50XT ATC C12, C13 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1 15 , 1/4 W Chip Resistor CRCW120615R0FKEA Vishay PCB Rogers RO4350B, 0.030, r = 3.66 — MTL MMRF1005HR5 MMRF1005HSR5 RF Device Data Freescale Semiconductor 3 C1 C2 C5 C7 C4 R1 C9 C8 C11 C10 C12 C6 CUT OUT AREA C3 C18 C17 C15 C13 C16 C14 Figure 2. MMRF1005HR5(HSR5) Test Circuit Component Layout — 1300 MHz, Pulse MMRF1005HR5 MMRF1005HSR5 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSE 60 Pout, OUTPUT POWER (dBm) PULSED 1000 100 Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 10 20 40 30 57 P2dB = 55.1 dBm (326 W) 56 P1dB = 54.7 dBm (293 W) 55 Actual 54 31 30 50 32 33 34 35 36 37 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PEAK Figure 3. Capacitance versus Drain--Source Voltage Figure 4. Output Power versus Input Power 70 25 60 23 22 50 21 40 Gps 20 30 20 19 D 10 18 17 1 10 0 500 100 19 45 V 40 V 17 VDD = 50 V 35 V 30 V 15 11 IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 sec Duty Cycle = 10% 25 V 20 V 0 50 100 150 200 300 250 350 400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 5. Power Gain and Drain Efficiency versus Output Power Figure 6. Power Gain versus Output Power 24 25 V 50 35 V 30 V 45 V 40 V VDD = 50 V 20 V 40 30 IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 sec Duty Cycle = 10% 20 50 100 150 200 250 300 350 VDD = 50 Vdc IDQ = 100 mA f = 1300 MHz Pulse Width = 200 sec Duty Cycle = 10% 23 Gps, POWER GAIN (dB) 60 0 21 13 70 10 Gps, POWER GAIN (dB) VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz 23 Pulse Width = 200, sec Duty Cycle = 10% D, DRAIN EFFICIENCY (%) 24 Gps, POWER GAIN (dB) P3dB = 55.4 dBm (345 W) 58 53 0 D, DRAIN EFFICIENCY (%) Ideal 22 --30_C 60 Gps 50 21 85_C TC = --30_C 20 19 40 30 D 25_C 25_C 20 10 18 85_C 17 400 70 D, DRAIN EFFICIENCY (%) C, CAPACITANCE (pF) Ciss VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz Pulse Width = 200 sec, Duty Cycle = 10% 59 3 10 100 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Efficiency versus Output Power Figure 8. Power Gain and Drain Efficiency versus Output Power 0 500 MMRF1005HR5 MMRF1005HSR5 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — CW 25 60 Gps, POWER GAIN (dB) 23 55 10 mA Gps IDQ = 700 mA 50 700 mA 22 300 mA 300 mA 21 10 mA 20 45 40 35 19 30 D 18 VDD = 50 Vdc f = 1300 MHz TC = 61C (1) 17 16 20 40 60 25 D, DRAIN EFFICIENCY (%) 24 20 15 80 100 120 140 160 180 200 220 240 260 280 Pout, OUTPUT POWER (WATTS) CW 1. Data for graph was collected in a water--cooled test fixture. The water inlet temperature = 25C. Figure 9. CW Power Gain and Drain Efficiency versus Output Power 109 VDD = 50 Vdc Pout = 230 W CW D = 53% MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) MTTF calculator available at http://www.freescale.com/rf/calculators. Figure 10. MTTF versus Junction Temperature — CW MMRF1005HR5 MMRF1005HSR5 6 RF Device Data Freescale Semiconductor Zo = 10 Zsource Zload f = 1300 MHz f = 1300 MHz VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak f MHz Zsource Zload 1300 5.32 + j4.11 1.17 + j1.48 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance — Pulse MMRF1005HR5 MMRF1005HSR5 RF Device Data Freescale Semiconductor 7 R1 VBIAS Z19 Z10 + C1 C2 C3 C4 Z18 C8 C9 C10 C11 Z9 RF INPUT Z11 Z1 VSUPPLY + + Z2 Z3 Z4 Z5 Z6 Z7 Z12 Z13 Z14 Z15 Z16 Z8 C5 C12 C7 C13 Z17 RF OUTPUT C6 DUT Z20 Z21 + C19 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9* Z10 0.447 x 0.063 Microstrip 0.030 x 0.084 Microstrip 0.120 x 0.063 Microstrip 0.855 x 0.293 Microstrip 0.369 x 0.825 Microstrip 0.203 x 0.516 Microstrip 0.105 x 0.530 Microstrip 0.105 x 0.530 Microstrip 0.116 x 0.050 Microstrip 0.122 x 0.050 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18, Z20 Z19*, Z21* C18 C17 C16 C15 VSUPPLY C14 0.162 x 1.160 Microstrip 0.419 x 1.160 Microstrip 0.468 x 0.994 Microstrip 0.131 x 0.472 Microstrip 0.264 x 0.222 Microstrip 0.500 x 0.111 Microstrip 0.291 x 0.063 Microstrip 0.105 x 0.388 Microstrip 0.854 x 0.052 Microstrip *Line length includes microstrip bends. Figure 12. MMRF1005HR5(HSR5) Application Circuit Schematic — 1300 MHz, CW Table 6. MMRF1005HR5(HSR5) Application Circuit Component Designations and Values — 1300 MHz, CW Part Description Part Number Manufacturer C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C3, C12, C15 0.1 F, 50 V Chip Capacitors CDR33BX104AKWS AVX C4, C6, C7, C8, C19 100 pF Chip Capacitors ATC800B101JT500XT ATC C5 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C9, C18 1000 pF Chip Capacitors ATC100B102JT50XT ATC C10, C17 1000 pF Chip Capacitors ATC700B102FT50XT ATC C11, C16 10K pF Chip Capacitors ATC200B103KT50XT ATC C13, C14 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1 15 , 1/4 W Chip Resistor CRCW120615R0FKEA Vishay PCB Rogers RO4350B, 0.030, r = 3.66 — MTL MMRF1005HR5 MMRF1005HSR5 8 RF Device Data Freescale Semiconductor C1 C2 C5 C8 C4 R1 C10 C9 C12 C11 C13 C7 CUT OUT AREA C3 C6 C19 C18 C16 C14 C17 C15 Figure 13. MMRF1005HR5(HSR5) Application Circuit Component Layout — 1300 MHz, CW MMRF1005HR5 MMRF1005HSR5 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MMRF1005HR5 MMRF1005HSR5 10 RF Device Data Freescale Semiconductor MMRF1005HR5 MMRF1005HSR5 RF Device Data Freescale Semiconductor 11 MMRF1005HR5 MMRF1005HSR5 12 RF Device Data Freescale Semiconductor MMRF1005HR5 MMRF1005HSR5 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2013 Initial Release of Data Sheet 1 Apr. 2015 Tables 5 and 6, Test Circuit Component Designations and Values: updated PCB description to reflect most current board specifications from Rogers, pp. 3, 8 Added CW application circuit for 1300 MHz as follows: schematic, component designations and values, and component layout, pp. 8--9 MMRF1005HR5 MMRF1005HSR5 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013, 2015 Freescale Semiconductor, Inc. MMRF1005HR5 MMRF1005HSR5 Document Number: RF Device Data MMRF1005H Rev. 1, 4/2015 Freescale Semiconductor 15