Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device are ideal for large--signal, common--source amplifier applications in 28 V RF systems. 500--1000 MHz, 60 W CW, 28 V BROADBAND RF POWER LDMOS TRANSISTOR Typical Single--Carrier N--CDMA Performance @ 880 MHz, VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.1 dB Drain Efficiency — 33% ACPR @ 750 kHz Offset — --45.7 dBc in 30 kHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application TO--270--2 PLASTIC Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., Full Frequency Band (920--960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = --62 dBc Spectral Regrowth @ 600 kHz Offset = --78 dBc EVM — 1.5% rms GSM Application Typical GSM Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, Full Frequency Band (920--960 MHz) Power Gain — 20 dB Drain Efficiency — 63% Features Characterized with Series Equivalent Large--Signal Impedance Parameters Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. 1 Drain Gate 2 (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -- 0.5, +66 Vdc Gate--Source Voltage VGS -- 0.5, + 12 Vdc Maximum Operation Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 60 W CW Case Temperature 78C, 14 W CW RJC 0.77 0.88 C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1315NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) VGS(th) 1 2.2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 2 3 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.05 0.27 0.4 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.1 — pF Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 33 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 109 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 20 21.1 23 dB Drain Efficiency D 30.5 33 — % ACPR — --45.7 --44 dBc IRL — --18 --9 Adjacent Channel Power Ratio Input Return Loss dB (continued) MMRF1315NR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920--960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 920--960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency D — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — --62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — --78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920--960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 920--960 MHz Power Gain Gps — 20 — dB Drain Efficiency D — 63 — % IRL — --12 — dB P1dB — 67 — W Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865--900 MHz Bandwidth Video Bandwidth @ 60 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 3 — Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg. GF — 0.27 — dB Gain Variation over Temperature (--30C to +85C) G — 0.011 — dB/C P1dB — 0.088 — dBm/C Output Power Variation over Temperature (--30C to +85C) MMRF1315NR1 RF Device Data Freescale Semiconductor, Inc. 3 B2 B1 R1 VBIAS + + C9 RF INPUT R4 R2 C7 C15 R3 C8 Z2 Z3 Z4 Z5 Z6 L1 Z7 Z8 C6 Z11 Z12 C1 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 + C16 C17 C19 C4 Z13 C5 0.215 x 0.065 Microstrip 0.221 x 0.065 Microstrip 0.500 x 0.100 Microstrip 0.460 x 0.270 Microstrip 0.040 x 0.270 Microstrip 0.280 x 0.270 x 0.530 Taper 0.087 x 0.525 Microstrip 0.435 x 0.525 Microstrip DUT Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB C12 C13 C18 RF Z15 OUTPUT Z14 Z9 C10 C2 + C11 L2 Z10 Z1 + VSUPPLY C14 0.057 x 0.525 Microstrip 0.360 x 0.270 Microstrip 0.063 x 0.270 Microstrip 0.360 x 0.065 Microstrip 0.170 x 0.065 Microstrip 0.880 x 0.065 Microstrip 0.260 x 0.065 Microstrip Taconic RF--35 0.030, r = 3.5 Figure 2. MMRF1315NR1 Test Circuit Schematic Table 6. MMRF1315NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair Rite B2 Ferrite Bead 274021447 Fair Rite C1, C8, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C4, C13 0.8--8.0 pF Variable Capacitors, Gigatrim 2729152 Johanson C3 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATC C5, C6 15 pF Chip Capacitors ATC100B150JT500XT ATC C7, C16, C17 10 F, 35 V Tantalum Capacitors T491D106K035AT Kemet C9 100 F, 50 V Electrolytic Capacitor MCHT101M1HB--1017--RH Multicomp C10, C11 12 pF Chip Capacitors ATC100B120JT500XT ATC C12 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATC C18 0.56 F Chip Capacitor ATC700A561MT150XT ATC C19 470 F, 63 V Electrolytic Capacitor EKME630ELL471MK255 Multicomp L1, L2 12.5 nH Inductor A04T--5 Coilcraft R1 1 k, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 k, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3 12 , 1/4 W Chip Resistor CRCW120612R0FKEA Vishay R4 27 Ω, 1/4 W Chip Resistor CRCW120627R0FKEA Vishay MMRF1315NR1 4 RF Device Data Freescale Semiconductor, Inc. C7 VGG R2 R1 C19 B1 R3 C8 C15 C9 C2 C3 C5 R4 C18 L2 CUT OUT AREA C6 L1 C1 VDD C16 C17 B2 C11 C10 C12 C13 C14 C4 TO--270/272 Surface / Bolt down Figure 3. MMRF1315NR1 Test Circuit Component Layout MMRF1315NR1 RF Device Data Freescale Semiconductor, Inc. 5 D 30 Gps 19 18 IRL 17 --30 --40 ACPR 16 15 14 20 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 450 mA, N--CDMA IS--95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 --50 --60 ALT1 820 860 840 880 900 920 940 960 --70 980 0 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 20 --5 --10 --15 --20 IRL, INPUT RETURN LOSS (dB) 40 21 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) D 18 17 40 VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 450 mA, N--CDMA IS--95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 IRL 16 --20 --30 ACPR 15 14 13 50 Gps --40 --50 ALT1 820 840 860 880 900 920 940 960 --60 980 0 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 19 --5 --10 --15 --20 IRL, INPUT RETURN LOSS (dB) 60 20 D, DRAIN EFFICIENCY (%) Figure 4. Single--Carrier N--CDMA Broadband Performance @ Pout = 14 Watts Avg. f, FREQUENCY (MHz) Figure 5. Single--Carrier N--CDMA Broadband Performance @ Pout = 28 Watts Avg. 21 --10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 675 mA 550 mA Gps, POWER GAIN (dB) 20 450 mA 350 mA 19 225 mA 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two--Tone Measurements 16 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Two--Tone Power Gain versus Output Power 200 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two--Tone Measurements --20 --30 IDQ = 225 mA --40 350 mA --50 675 mA 450 mA 550 mA --60 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Third Order Intermodulation Distortion versus Output Power MMRF1315NR1 6 RF Device Data Freescale Semiconductor, Inc. --10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 450 mA f1 = 880 MHz, f2 = 880.1 MHz Two--Tone Measurements --20 --30 --40 --50 3rd Order --60 5th Order --70 --80 7th Order 1 100 10 200 0 VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz --10 --20 --30 IM3--U IM3--L --40 --50 IM7--U IM7--L --60 --70 IM5--U IM5--L 1 0.1 10 80 Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 8. Intermodulation Distortion Products versus Output Power Figure 9. Intermodulation Distortion Products versus Tone Spacing 58 Pout, OUTPUT POWER (dBm) Ideal P6dB = 51.31 dBm (135.21 W) 57 56 55 P3dB = 50.39 dBm (109.4 W) 54 53 P1dB = 49.41 dBm (87.3 W) 52 51 Actual 50 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 12 sec(on) 1% Duty Cycle, f = 880 MHz 49 48 27 29 28 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) 65 60 55 50 45 40 35 30 25 20 15 10 5 0 VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N--CDMA IS--95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 ACPR Gps D ALT1 1 10 --15 --20 --25 25_C --30 85_C --35 --30_C --40 25_C --45 --30_C 85_C --50 --55 --30_C --60 --65 85_C --70 25_C --75 --80 100 TC = --30_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 10. Pulsed CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 11. Single--Carrier N--CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MMRF1315NR1 RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS TC = --30_C Gps 25_C Gps, POWER GAIN (dB) 20 85_C 19 25_C 18 85_C 70 60 50 40 17 30 16 20 VDD = 28 Vdc IDQ = 450 mA f = 880 MHz D 15 1 10 20 19 18 28 V 32 V 17 10 VDD = 24 V 0 200 100 IDQ = 450 mA f = 880 MHz 21 Gps, POWER GAIN (dB) --30_C D DRAIN EFFICIENCY (%) 21 14 22 80 22 16 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power Figure 13. Power Gain versus Output Power 140 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and D = 32.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature MMRF1315NR1 8 RF Device Data Freescale Semiconductor, Inc. N--CDMA TEST SIGNAL --10 100 --20 --30 1 --40 --50 0.1 IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 --70 --80 --90 0.0001 0 2 4 6 --60 8 PEAK--TO--AVERAGE (dB) Figure 15. Single--Carrier CCDF N--CDMA 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . --ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW ...................... ......... .......... ..... .......... . .............. ...... ... .. . . . . . . . .............. ..... ............ ......... .......... . ... ...... ...... ........ .......... . . . . . . . . . ......... ............. . . . . ....... --ACPR in 30 kHz . . . . .. .... . . +ACPR in 30 kHz ................... ....... .. ............ . . ........... ... ................ . . . . . . Integrated BW Integrated BW .. ........ ...... .......... ...... ............ ........... --100 --110 --3.6 --2.9 --2.2 --1.5 --0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 16. Single--Carrier N--CDMA Spectrum MMRF1315NR1 RF Device Data Freescale Semiconductor, Inc. 9 Zo = 5 f = 910 MHz Zsource f = 910 MHz Zload f = 850 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz Zsource Zload 850 0.44 -- j0.20 2.28 + j0.23 865 0.44 -- j0.07 2.18 + j0.33 880 0.45 + j0.50 2.20 + j0.47 895 0.48 + j0.18 2.15 + j0.61 910 0.52 + j0.29 2.00 + j0.68 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance MMRF1315NR1 10 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMRF1315NR1 RF Device Data Freescale Semiconductor, Inc. 11 MMRF1315NR1 12 RF Device Data Freescale Semiconductor, Inc. MMRF1315NR1 RF Device Data Freescale Semiconductor, Inc. 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2014 Description Initial Release of Data Sheet MMRF1315NR1 14 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. 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