Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF5S9070NR1
Rev. 7, 6/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF5S9070NR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts,
IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
Power Gain — 17.8 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
880 MHz, 70 W, 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, + 68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
219
1.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C, 14 W CW
RθJC
°C/W
0.80
0.93
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
2
2.7
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.18
0.22
Vdc
gfs
—
4.7
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
126
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
34
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.37
—
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
Dynamic Characteristic
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Gps
17
17.8
—
dB
Drain Efficiency
ηD
29
30
—
%
ACPR
—
- 47
- 45
dBc
IRL
—
- 19
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA,
Pout = 60 W, f = 921 - 960 MHz
Power Gain
Gps
—
16.4
—
dB
Drain Efficiency
ηD
—
62
—
%
IRL
—
- 12
—
dB
P1dB
—
68
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 25 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
44
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
(continued)
MRF5S9070NR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA,
Pout = 60 W, f = 865 - 895 MHz
Power Gain
Gps
—
16.4
—
dB
Drain Efficiency
ηD
—
59
—
%
Input Return Loss
IRL
—
- 15
—
dB
P1dB
—
71
—
W
Pout @ 1 dB Compression Point
(f = 880 MHz)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 25 W Avg., f = 865 - 895 MHz, GSM EDGE Signal
Power Gain
Drain Efficiency
Gps
—
17
—
dB
ηD
—
41
—
%
Error Vector Magnitude
EVM
—
1.35
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 81
—
dBc
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
3
VSUPPLY
B2
C18
+
C20
C19
+
C21
R4
L2
VBIAS
B1
R1
+
C7
+
C11
C8
C9
C22
C10
+
R2
L1
R3
C12
C5
RF
INPUT Z1
Z2
C1
Z3 Z4
C2
Z5 Z6
Z10
Z7
Z8
Z9
C3
C4
C6
Z11
Z12
C13
C14
Z13
Z14
C15
Z15
Z16
RF
OUTPUT
C16 C17
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.140″ x 0.060″ Microstrip
0.141″ x 0.060″ Microstrip
0.280″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.530″ x 0.270″ Microstrip
0.155″ x 0.270″ x 0.530″ Taper
0.376″ x 0.530″ Microstrip
0.116″ x 0.530″ Microstrip
0.055″ x 0.530″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.245″ x 0.270″ Microstrip
0.110″ x 0.270″ Microstrip
0.055″ x 0.270″ Microstrip
0.512″ x 0.060″ Microstrip
0.106″ x 0.060″ Microstrip
0.930″ x 0.060″ Microstrip
0.365″ x 0.060″ Microstrip
Taconic RF - 35, 0.030″, εr = 3.5
Figure 1. MRF5S9070NR1 Test Circuit Schematic
Table 6. MRF5S9070NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Small Ferrite Bead, Surface Mount
2743019447
Fair - Rite
B2
Large Ferrite Bead, Surface Mount
2743021447
Fair - Rite
C1
0.6 - 6.0 pF Variable Capacitor, Gigatrim
272715L
Johanson
C2
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C3
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
C4, C16
0.8 - 8.0 pF Variable Capacitors, Gigatrim
272915L
Johanson
C5, C6
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C7, C8, C20
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
Kemet
C9, C19, C22
0.58 μF Chip Capacitors
ATC700A561MT150XT
ATC
C10, C18
18 pF Chip Capacitors
ATC100B180JT500XT
ATC
C11
100 μF, 50 V Electrolytic Capacitor
515D107M050BB6AE3
Vishay
C12, C14
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C13
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
C15
3.9 pF Chip Capacitor
ATC100B3R9JT500XT
ATC
C17
22 pF Chip Capacitor
ATC100B180JT500XT
ATC
C21
470 μF, 63 V Electrolytic Capacitor
ESMG630ELL471MK20S
United Chemi - Con
L1, L2
12.5 nH Surface Mount Inductors
A04TJL
Coilcraft
R1
1 kW, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kW, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3
12 W, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
R4
27 W, 1/4 W Chip Resistor
CRCW120627R0FKEA
Vishay
MRF5S9070NR1
4
RF Device Data
Freescale Semiconductor
C7 R1
VGG
C11
R2
R3
B2
C9
VDD
C20
R4
C22
C10
C18
C6
C2
C21
C19
C8
B1
L2
L1
C12
C17
C15
C3
C1
C5
C16
C4
CUT OUT AREA
C13 C14
MRF5S9070N
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9070NR1 Test Circuit Component Layout
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
5
19
18
17
16
Gps
ηD
VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA
Single−Carrier N−CDMA, IS−95
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
15
14
13
12
ACPR
11
10
ALT
IRL
40
35
30
25
−40
−45
−50
−55
−60
9
8
860
865
870
875
880
885
890
−65
−70
900
895
−12
−15
−18
−21
−24
−27
−30
IRL, INPUT RETURN LOSS (dB)
45
ACPR (dBc), ALT (dBc)
G ps , POWER GAIN (dB)
20
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Performance
IDQ = 900 mA
750 mA
600 mA
18
450 mA
17
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
300 mA
16
15
−30
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
−35
−40
IDQ = 900 mA
300 mA
750 mA
−45
600 mA
−50
−55
450 mA
−60
1
10
100
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
60
Gps
18
40
16
20
ηD
14
0
VDD = 26 Vdc, IDQ = 600 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements,
100 kHz Tone Spacing
12
10
−20
−40
IMD
8
−60
1
10
100
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
Pout, OUTPUT POWER (WATTS) PEP
20
G ps , POWER GAIN (dB)
−25
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB)
19
−20
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
−10
−20
−30
−40
−50
−60
−70
VDD = 26 Vdc, IDQ = 600 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
100 kHz Tone Spacing
3rd Order
5th Order
7th Order
−80
−90
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Drain Efficiency and
IMD versus Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
MRF5S9070NR1
6
RF Device Data
Freescale Semiconductor
55
20
54
Gps
18
53
G ps , POWER GAIN (dB)
P3dB = 49.78 dBm (94.97 W)
52
51
P1dB = 49.11 dBm (81.54 W)
50
49
Actual
48
46
20
ηD
14
0
VDD = 26 Vdc, IDQ = 600 mA, f = 880 MHz
−20
Single−Carrier N−CDMA, IS−95
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
−40
12
10
ACPR
VDD = 26 Vdc, IDQ = 600 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 880 MHz
47
16
40
8
−60
ALT
45
6
27
28
29
30
31
32
33
34
35
36
37
−80
1
10
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. N - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
20
70
Gps
18
60
16
50
14
40
12
30
10
VDD = 26 Vdc
IDQ = 600 mA
f = 880 MHz
ηD
ηD, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (dBm)
60
Ideal
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ηD, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
20
8
10
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Junction Temperature
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
7
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
.
..
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
.
..
.
Integrated BW
Integrated BW
..................
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
......
...........
......
...
..........
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 12. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 13. Single - Carrier N - CDMA Spectrum
MRF5S9070NR1
8
RF Device Data
Freescale Semiconductor
Zo = 2 Ω
f = 895 MHz
f = 895 MHz
Zsource
f = 865 MHz
Zload
f = 865 MHz
VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
865
0.7 + j0.4
2.1 + j0.6
875
0.7 + j0.5
2.0 + j0.7
885
0.6 + j0.5
1.8 + j0.8
895
0.5 + j0.5
1.8 + j0.9
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF5S9070NR1
10
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
11
MRF5S9070NR1
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
7
June 2009
Description
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 10 - 12. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 4
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
Product Documentation, Application Notes, p. 13
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 13
MRF5S9070NR1
RF Device Data
Freescale Semiconductor
13
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006, 2009. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MRF5S9070NR1
Document Number: MRF5S9070NR1
Rev. 7, 6/2009
14
RF Device Data
Freescale Semiconductor