MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers http://onsemi.com This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical to the system. ULTRAFAST RECTIFIERS 3.0 AMPERES 200−600 VOLTS Features • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C) SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices SMC CASE 403 PLASTIC MARKING DIAGRAM AYWW U3x Mechanical Characteristics • • • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 217 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model, C (> 400 V) ♦ Human Body Model, 3B (> 8 kV) U3 = Specific Device Code x = D (320T3) = G (340T3) = J (360T3) A = Assembly Location Y = Year WW= Work Week ORDERING INFORMATION Package Shipping† MURS320T3G SMC (Pb−Free) 2,500 / Tape & Reel SURS8320T3G SMC (Pb−Free) 2,500 / Tape & Reel MURS340T3G SMC (Pb−Free) 2,500 / Tape & Reel SURS8340T3G SMC (Pb−Free) 2,500 / Tape & Reel MURS360T3G SMC (Pb−Free) 2,500 / Tape & Reel SURS8360T3G SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 13 1 Publication Order Number: MURS320T3/D MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MAXIMUM RATINGS Rating Symbol MURS320T3G/ SURS8320T3G MURS340T3G/ SURS8340T3G MURS360T3G/ SURS8360T3G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 400 600 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 140°C 4.0 @ TL = 130°C 3.0 @ TL = 130°C 4.0 @ TL = 115°C 3.0 @ TL = 130°C 4.0 @ TL = 115°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature A 100 TJ *65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead 11 RqJL °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) (iF = 4.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) (iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V) tfr Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) V 0.875 0.89 0.71 1.25 1.28 1.05 1.25 1.28 1.05 5.0 150 10 250 10 250 35 25 75 50 75 50 25 50 50 mA ns ns IRM 0.8 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 A MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MURS320T3G/SURS8320T3G IR, REVERSE CURRENT (m A) 5.0 3.0 TJ = 175°C 2.0 25°C TJ = 175°C TJ = 100°C 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 25°C 0 20 40 60 1.0 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* 0.7 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.5 10 PF(AV) , AVERAGE POWER DISSIPATION (W)) i F , INSTANTANEOUS FORWARD CURRENT (A) 100°C 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 9.0 8.0 I (CAPACITIVELOAD) PK + 20 I 7.0 5.0 AV 10 6.0 5.0 4.0 dc 3.0 SQUARE WAVE 2.0 1.0 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 Figure 1. Typical Forward Voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 90 100 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Power Dissipation 200 RATED VOLTAGE APPLIED RqJL = 11°C/W TJ = 175°C 8.0 TYPICAL CAPACITANCE AT 0 V = 135 pF 7.0 C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (A) 10 9.0 6.0 5.0 4.0 3.0 dc 2.0 100 80 60 40 30 20 SQUARE WAVE 1.0 10 0 90 100 110 120 130 140 150 160 170 180 190 0 10 20 30 40 50 60 70 80 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Current Derating, Case Figure 5. Typical Capacitance http://onsemi.com 3 MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G 400 200 5.0 IR, REVERSE CURRENT (m A) 3.0 100°C TJ = 175°C 25°C 1.0 TJ = 100°C 0.08 0.04 0.02 TJ = 25°C 0.008 0.004 0.7 0 200 100 0.5 300 400 600 500 700 VR, REVERSE VOLTAGE (V) Figure 7. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F , INSTANTANEOUS FORWARD CURRENT (A) 2.0 TJ = 175°C 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.1 0.07 0.05 0.03 0.02 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 10 9.0 8.0 7.0 SQUARE WAVE 6.0 dc (CAPACITIVE LOADS) 5.0 I 4.0 I 3.0 PK + 20 10 5.0 AV 2.0 1.0 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 Figure 6. Typical Forward Voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 90 100 IF(AV), AVERAGE FORWARD CURRENT (A) 10 100 9.0 90 8.0 80 C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (A) Figure 8. Power Dissipation 7.0 6.0 5.0 4.0 dc 3.0 SQUARE WAVE 2.0 TYPICAL CAPACITANCE AT 0 V = 75 pF 70 60 50 40 30 20 1.0 10 0 0 70 80 90 100 110 120 130 140 150 160 170 0 10 20 30 40 50 60 70 80 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 9. Current Derating, Case Figure 10. Typical Capacitance http://onsemi.com 4 MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G IFSM, NON−REPETITIVE SURGE CURRENT (A) 10000 1000 100 10 10 100 1,000 tp, SQUARE WAVE PULSE DURATION (ms) 10,000 Figure 11. Typical Non−Repetitive Surge Current *Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. http://onsemi.com 5 MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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