SPB07N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB07N60S5 PG-TO263 Q67040-S4185 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 7.3 TC = 100 °C 4.6 Pulsed drain current, tp limited by Tjmax I D puls 14.6 Avalanche energy, single pulse EAS 230 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.5 mJ I D = - A, V DD = 50 V I D = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 7.3 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 83 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.3 Page 1 2005-07-21 SPB07N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, reflow soldering, MSL1 Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=7.3A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=350µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.3 RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 100 V GS=20V, VDS=0V - - 100 Ω V GS=10V, ID=4.6A, Tj=25°C - 0.54 0.6 Tj=150°C - 1.46 - f=1MHz, open Drain - 19 - Page 2 nA 2005-07-21 SPB07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 4 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=4.6A Input capacitance Ciss V GS=0V, V DS=25V, - 970 - Output capacitance Coss f=1MHz - 370 - Reverse transfer capacitance Crss - 10 - - 30 - - 55 - Effective output capacitance,3) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance,4) Co(tr) time related Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 120 - Rise time tr ID=7.3A, RG=12Ω - 40 - Turn-off delay time t d(off) - 170 255 Fall time tf - 20 30 - 7.5 - - 16.5 - - 27 35 - 8 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg pF VDD=350V, ID=7.3A VDD=350V, ID=7.3A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=7.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.3 Page 3 2005-07-21 SPB07N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 7.3 - - 14.6 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 750 1275 ns Reverse recovery charge Qrr diF/dt=100A/µs - 4.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.024 R th2 Cth1 0.00012 0.046 Cth2 0.0004578 R th3 0.085 Cth3 0.000645 R th4 0.308 Cth4 0.001867 R th5 0.317 Cth5 0.004795 R th6 0.112 Cth6 0.045 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.3 Page 4 2005-07-21 SPB07N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 100 10 2 SPP07N60S5 W A 80 10 1 ID Ptot 70 60 10 0 50 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 40 30 10 -1 20 10 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Typ. output characteristic 4 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 25 12 20V 20V 12V 10V A A 9V 15 ID ID 12V 10V 8.5V 8 8V 6 9V 10 7.5V 4 7V 8V 5 6.5V 2 6V 7V 0 0 5 10 15 V 25 VDS Rev. 2.3 0 0 5 10 15 V 25 VDS Page 5 2005-07-21 3 SPB07N60S5 5 Typ. drain-source on resistance 6 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V 3 3.4 SPP07N60S5 Ω 2.8 RDS(on) RDS(on) mΩ 2 2 1.6 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1.5 1 0 2.4 2 4 6 8 A 10 1.2 98% 0.8 typ 0.4 0 -60 14 -20 20 60 °C 100 ID 180 Tj 7 Typ. transfer characteristics 8 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 7.3 A pulsed parameter: tp = 10 µs 24 16 SPP07N60S5 A 20 0.2 VDS max 18 12 0.8 VDS max 16 14 VGS ID V 25 °C 150 °C 12 10 8 10 6 8 6 4 4 2 2 0 0 4 8 12 V 20 4 8 12 16 20 24 28 32 nC 38 Q Gate VGS Rev. 2.3 0 0 Page 6 2005-07-21 SPB07N60S5 9 Forward characteristics of body diode 10 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 2 SPP07N60S5 10 8 A A 6 IAR IF 10 1 5 T j(START) =25°C 4 3 10 0 T j(START) =125°C Tj = 25 °C typ 2 Tj = 150 °C typ Tj = 25 °C (98%) 1 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR VSD 11 Avalanche energy 12 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = - A, VDD = 50 V 260 720 mJ SPP07N60S5 V 220 V(BR)DSS EAS 200 180 160 680 660 640 140 120 620 100 600 80 60 580 40 560 20 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.3 540 -60 -20 20 60 100 °C 180 Tj Page 7 2005-07-21 SPB07N60S5 13 Avalanche power losses 14 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz 10 4 300 pF W Ciss 200 C PAR 10 3 10 2 150 Coss 100 10 1 Crss 50 0 4 10 10 5 MHz 10 10 0 0 6 100 200 300 400 V 600 VDS f 15 Typ. Coss stored energy 16 Typ. gate threshold voltage Eoss=f(VDS) VGS(th) = f (Tj) parameter: V GS = VDS 5.5 µJ 4.5 Eoss 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.3 Page 8 2005-07-21 SPB07N60S5 Definition of diodes switching characteristics Rev. 2.3 Page 9 2005-07-21 SPB07N60S5 PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 Page 10 2005-07-21 SPB07N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 11 2005-07-21