TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V(BR)DSS Min (V) –20 rDS(on) Max () VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 For applications information see AN804. Features Benefits Applications Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control High-Side Switching Low On-Resistance: 0.9 Low Threshold: –2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-236 (SOT-23) G 1 S 2 3 D Top View TP0202T (P3)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C) TA= TA= Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range TA= V –0.31 ID IDM TA= Unit –0.25 A –0.75 0.2 PD 0.128 W RthJA 625 C/W TJ, Tstg –55 to 150 C Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2812. Applications information may also be obtained via FaxBack, request document #9804. Siliconix S-44505—Rev. E, 06-Sep-94 1 TP0202T Specificationsa Limits Parameter Symbol Test Conditions Min Typb V(BR)DSS VGS = 0 V, ID = –10 mA –20 –25 VGS(th) VDS = VGS, ID = –0.25 mA –1.3 –2.1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –16 V, VGS = 0 V –1 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentc ID(on) Drain-Source On-Resistancec rDS(on) Forward Transconductance c Diode Forward Voltage TJ = 55C VDS = –10 V, VGS = –10 V –3 –10 –0.5 –0.75 1.7 3.5 VGS = –10 V, ID = –0.2 A 0.9 1.4 VDS = –10 V, ID = –0.2 A VSD IS = –0.25 A, VGS = 0 V 250 600 –0.9 nA mA A VGS = –4.5 V, ID = –0.05 A gfs V W mS –1.5 V Dynamic Total Gate Charge Qg 2700 Gate-Source Charge Qgs Gate-Drain Charge Qgd 600 Input Capacitance Ciss 55 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS –16 V, VGS =–10 V, ID ^ –200 mA VDS = –15 V, VGS = 0 V, f = 1 MHz 500 pC 50 pF 18 Switchingd Turn-On Time Turn-Off Time td(on) tr td(off) VDD = –15 V, V RL = 75 W ID ^ –0.2 A, VGEN = -10 V RG = 6 W tf Notes a. TA = 25C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. 2 8 12 20 30 20 35 30 40 ns VPBP02 Siliconix S-44505—Rev. E, 06-Sep-94 TP0202T Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics 0.8 Transfer Characteristics 1.0 5V TC = –55C VGS = 10, 9, 8, 7, 6 V I D – Drain Current (A) I D – Drain Current (A) 0.8 0.6 0.4 4V 0.2 25C 125C 0.6 0.4 0.2 3V 0 0 0 1 2 3 4 0 VDS – Drain-to-Source Voltage (V) rDS(on) – On-Resistance ( ) rDS(on) – On-Resistance ( ) rDS(on) = 200 mA 3 2 50 mA 0 6.0 4 3 VGS = 4.5 V 2 VGS = 10 V 1 0 0 4 8 12 16 20 0 0.1 Capacitance 180 0.2 0.3 0.4 0.5 ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) Gate Charge 20 ID = 200 mA VGS – Gate-to-Source Voltage (V) 160 140 C – Capacitance (pF) 4.5 On-Resistance vs. Drain Current 5 4 1 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 5 1.5 120 Coss 100 80 60 Ciss 40 20 15 10 VDS @ 10 V VDS @ 16 V 5 Crss 0 0 0 4 8 12 16 VDS – Drain-to-Source Voltage (V) Siliconix S-44505—Rev. E, 06-Sep-94 20 0 1000 2000 3000 4000 5000 6000 Qg – Total Gate Charge (nC) 3 TP0202T Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature Source-Drain Diode Forewad Voltage 1.5 10.000 VGS = 10 V ID = 200 mA 1.3 I S – Source Current (A) rDS(on) – On-Resistance ( W ) (Normalized) 1.4 1.2 VGS = 4.5 V ID = 50 mA 1.1 1.0 0.9 0.8 0.7 TJ = 150C 1.000 0.100 TJ = 25C 0.010 0.6 0.5 –50 0.001 –25 0 25 50 75 100 125 150 0 0.4 TJ – Junction Temperature (C) 0.8 1.2 1.6 2.0 2.4 2.8 VSD – Source-to-Drain Voltage (V) Threshold Voltage Variance Over Temperature 0.50 VGS(th) Variance (V) 0.25 ID = 250 mA 0.00 –0.25 –0.50 –50 –25 0 25 50 75 100 125 150 Temperature (C) 4 Siliconix S-44505—Rev. E, 06-Sep-94