ETC TP0202T-T1

TP0202T
P-Channel Enhancement-Mode MOS Transistor
Product Summary
V(BR)DSS Min (V)
–20
rDS(on) Max ()
VGS(th) (V)
ID (A)
1.4 @ VGS = –10 V
–1.3 to – 3 V
–0.31
3.5 @ VGS = –4.5 V
–1.3 to – 3 V
–0.16
For applications information see AN804.
Features
Benefits
Applications
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
High-Side Switching
Low On-Resistance: 0.9 Low Threshold: –2.1 V
Fast Switching Speed: 18 ns
Low Input Capacitance: 55 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
TO-236
(SOT-23)
G
1
S
2
3
D
Top View
TP0202T (P3)*
*Marking Code for TO-236
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)
TA= TA= Pulsed Drain Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= V
–0.31
ID
IDM
TA= Unit
–0.25
A
–0.75
0.2
PD
0.128
W
RthJA
625
C/W
TJ, Tstg
–55 to 150
C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2812.
Applications information may also be obtained via FaxBack, request document #9804.
Siliconix
S-44505—Rev. E, 06-Sep-94
1
TP0202T
Specificationsa
Limits
Parameter
Symbol
Test Conditions
Min
Typb
V(BR)DSS
VGS = 0 V, ID = –10 mA
–20
–25
VGS(th)
VDS = VGS, ID = –0.25 mA
–1.3
–2.1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = –16 V, VGS = 0 V
–1
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentc
ID(on)
Drain-Source On-Resistancec
rDS(on)
Forward Transconductance c
Diode Forward Voltage
TJ = 55C
VDS = –10 V, VGS = –10 V
–3
–10
–0.5
–0.75
1.7
3.5
VGS = –10 V, ID = –0.2 A
0.9
1.4
VDS = –10 V, ID = –0.2 A
VSD
IS = –0.25 A, VGS = 0 V
250
600
–0.9
nA
mA
A
VGS = –4.5 V, ID = –0.05 A
gfs
V
W
mS
–1.5
V
Dynamic
Total Gate Charge
Qg
2700
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
600
Input Capacitance
Ciss
55
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS –16 V, VGS =–10 V, ID ^ –200 mA
VDS = –15 V, VGS = 0 V, f = 1 MHz
500
pC
50
pF
18
Switchingd
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
VDD = –15 V,
V RL = 75 W
ID ^ –0.2 A, VGEN = -10 V
RG = 6 W
tf
Notes
a. TA = 25C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
8
12
20
30
20
35
30
40
ns
VPBP02
Siliconix
S-44505—Rev. E, 06-Sep-94
TP0202T
Typical Characteristics (25C Unless Otherwise Noted)
Output Characteristics
0.8
Transfer Characteristics
1.0
5V
TC = –55C
VGS = 10, 9, 8, 7, 6 V
I D – Drain Current (A)
I D – Drain Current (A)
0.8
0.6
0.4
4V
0.2
25C
125C
0.6
0.4
0.2
3V
0
0
0
1
2
3
4
0
VDS – Drain-to-Source Voltage (V)
rDS(on) – On-Resistance ( )
rDS(on) – On-Resistance ( )
rDS(on) = 200 mA
3
2
50 mA
0
6.0
4
3
VGS = 4.5 V
2
VGS = 10 V
1
0
0
4
8
12
16
20
0
0.1
Capacitance
180
0.2
0.3
0.4
0.5
ID – Drain Current (A)
VGS – Gate-to-Source Voltage (V)
Gate Charge
20
ID = 200 mA
VGS – Gate-to-Source Voltage (V)
160
140
C – Capacitance (pF)
4.5
On-Resistance vs. Drain Current
5
4
1
3.0
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
5
1.5
120
Coss
100
80
60
Ciss
40
20
15
10
VDS @ 10 V
VDS @ 16 V
5
Crss
0
0
0
4
8
12
16
VDS – Drain-to-Source Voltage (V)
Siliconix
S-44505—Rev. E, 06-Sep-94
20
0
1000
2000
3000
4000
5000
6000
Qg – Total Gate Charge (nC)
3
TP0202T
Typical Characteristics (25C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forewad Voltage
1.5
10.000
VGS = 10 V
ID = 200 mA
1.3
I S – Source Current (A)
rDS(on) – On-Resistance ( W )
(Normalized)
1.4
1.2
VGS = 4.5 V
ID = 50 mA
1.1
1.0
0.9
0.8
0.7
TJ = 150C
1.000
0.100
TJ = 25C
0.010
0.6
0.5
–50
0.001
–25
0
25
50
75
100
125
150
0
0.4
TJ – Junction Temperature (C)
0.8
1.2
1.6
2.0
2.4
2.8
VSD – Source-to-Drain Voltage (V)
Threshold Voltage Variance Over Temperature
0.50
VGS(th) Variance (V)
0.25
ID = 250 mA
0.00
–0.25
–0.50
–50
–25
0
25
50
75
100
125
150
Temperature (C)
4
Siliconix
S-44505—Rev. E, 06-Sep-94