NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 60 A, 600 V VCEsat = 2.0 V Eoff = 0.60 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C Typical Applications • Inverter Welding G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode forward current @ TC = 25°C @ TC = 100°C IF Pulsed collector current, Tpulse limited by TJmax ICM 240 A Diode pulsed current, Tpulse limited by TJmax IFM 240 A Gate−emitter voltage VGE $20 Power Dissipation @ TC = 25°C @ TC = 100°C PD A 120 60 A 120 60 G C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM V W 298 119 Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 60N60S AYWWG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB60N60SWG © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB60N60SW/D NGTB60N60SWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.42 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 60 A VGE = 15 V, IC = 60 A, TJ = 150°C VCEsat − − 2.0 2.6 2.5 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 4112 − pF Coes − 169 − Cres − 107 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total nC Qg 173 Qge 38 Qgc 87 td(on) 87 tr 48 td(off) 180 tf 70 Turn−off switching loss Eoff 0.60 Turn−on switching loss Eon 1.41 td(on) 85 tr 50 td(off) 186 tf 91 Eoff 1.11 Eon 1.77 VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 150°C VF 1.98 2.10 TJ = 25°C IF = 30 A, VR = 200 V diF/dt = 200 A/ms trr 76 ns Qrr 291 nc Irrm 7 A Gate to emitter charge VCE = 480 V, IC = 60 A, VGE = 15 V Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 60 A Rg = 10 W VGE = 0 V/ 15 V Turn−on delay time Rise time Turn−off delay time Fall time Turn−off switching loss TJ = 150°C VCC = 400 V, IC = 60 A Rg = 10 W VGE = 0 V/ 15 V Turn−on switching loss ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 2.30 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NGTB60N60SWG VGE = 20 − 15 V 13 V TJ = 25°C 180 160 140 120 11 V 100 80 10 V 60 40 9V 7V 20 0 240 220 200 1 2 3 4 8V 5 6 VGE = 20 − 17 V 200 180 15 V TJ = 150°C 13 V 160 140 120 100 11 V 80 60 10 V 9V 8V 7V 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = −55°C 180 160 140 120 11 V 100 80 60 10 V 40 20 0 9V 7V 1 2 3 4 5 7 240 220 200 TJ = 25°C 180 160 140 TJ = 150°C 120 100 80 60 40 20 0 8V 6 8 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 − 13 V 0 240 220 8 7 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 240 220 200 8 0 2 4 6 8 10 12 16 14 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.5 10,000 Cies IC = 80 A 3.0 IC = 60 A C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) TYPICAL CHARACTERISTICS 2.5 IC = 40 A 2.0 IC = 20 A 1.5 1000 TJ = 25°C Coes 100 Cres 1.0 0.5 −75 −50 −25 10 0 25 50 0 75 100 125 150 175 200 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB60N60SWG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) 110 IF, FORWARD CURRENT (A) 100 90 TJ = 25°C 80 70 TJ = 150°C 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 14 12 10 8 VCE = 480 V VGE = 15 V IC = 60 A 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1000 VCE = 400 V VGE = 15 V IC = 60 A Rg = 10 W 2.0 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 16 4.0 3.5 2.5 Eon 1.5 Eoff 1.0 0.5 VCE = 400 V VGE = 15 V IC = 60 A Rg = 10 W td(off) td(on) 100 tf tr 10 0 20 40 60 80 100 120 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 Eon VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2.0 20 TJ, JUNCTION TEMPERATURE (°C) 3.0 2.5 0 160 140 SWITCHING TIME (ns) 0 SWITCHING LOSS (mJ) 18 Eoff 1.5 1.0 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W td(off) tf 100 td(on) tr 0.5 0 10 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 80 NGTB60N60SWG TYPICAL CHARACTERISTICS 1000 7 VCE = 400 V VGE = 15 V TJ = 150°C IC = 60 A 5 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 6 Eon 4 3 Eoff 2 td(off) td(on) tf 100 tr VCE = 400 V VGE = 15 V TJ = 150°C IC = 60 A 1 0 10 5 15 25 35 45 55 65 75 5 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 85 1000 3.5 VGE = 15 V TJ = 150°C IC = 60 A Rg = 10 W 2.5 Eon SWITCHING TIME (ns) 3.0 SWITCHING LOSS (mJ) 15 2.0 Eoff 1.5 1.0 VGE = 15 V TJ = 150°C IC = 60 A Rg = 10 W td(off) tf 100 td(on) tr 0.5 10 0 175 225 275 325 375 425 475 525 175 225 575 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 100 50 ms 100 ms 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 1 ms dc operation 0.1 IC, COLLECTOR CURRENT (A) 1000 IC, COLLECTOR CURRENT (A) 275 100 10 VGE = 15 V TC = 150°C 1 1 10 100 1000 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. IC vs. VCE Figure 18. IC vs. VCE http://onsemi.com 5 1000 NGTB60N60SWG TYPICAL CHARACTERISTICS SQUARE WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle 0.1 0.01 20% 10% 5% RqJC = 0.42 Junction 2% R1 C1 0.001 R2 Rn Case Cn C2 Ri (°C/W) Ci (J/°C) 0.034317 0.069684 0.027029 0.128158 0.002914 0.004538 0.036997 0.024675 0.140642 0.071103 1.610308 0.019638 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 19. IGBT Transient Thermal Impedance SQUARE WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 1.00 20% 10% 0.1 Junction R1 R2 Rn C1 C2 Cn 5% 2% 0.01 Case Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 20. Diode Transient Thermal Impedance http://onsemi.com 6 0.1 Ri (°C/W) Ci (J/°C) 0.015509 0.020310 0.022591 0.050667 0.093366 0.195285 0.133203 0.173839 0.000064 0.000492 0.001400 0.001974 0.003387 0.005121 0.023740 0.057525 0.251384 0.039982 0.125795 2.501137 1 NGTB60N60SWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K W J F 2 PL D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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