NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 50 A, 600 V VCEsat = 2.4 V Eoff = 0.60 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode This is a Pb−Free Device C Typical Applications • Inductive Heating • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 200 Gate−emitter voltage VGE $20 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 100 50 200 A G C TO−247 CASE 340L STYLE 4 E A 100 50 A MARKING DIAGRAM V W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 50N60SW AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB50N60SWG © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 0 1 Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N60SW/D NGTB50N60SWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.87 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.46 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 150°C VCEsat − − 2.4 2.6 2.6 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3100 − pF Coes − 120 − Cres − 80 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC Qg 135 Qge 27 Qgc 67 td(on) 70 tr 32 td(off) 144 tf 66 Eoff 0.60 mJ td(on) 70 ns tr 36 td(off) 150 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15V Turn−off switching loss Turn−on delay time Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15V ns tf 85 Eoff 1.11 VGE = 0 V, IF = 25 A VGE = 0 V, IF = 25 A, TJ = 150°C VF 1.2 1.11 TJ = 25°C IF = 25 A, VR = 200 V diF/dt = 200 A/ms trr 376 ns Qrr 4145 nc Irrm 22 A Turn−off switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NGTB50N60SWG TYPICAL CHARACTERISTICS 140 TJ = 25°C VGE = 17 V to 15 V 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 13 V 100 80 60 11 V 40 10 V 20 9V 7 V to 8 V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 120 VGE = 17 V to 13 V 100 80 60 11 V 10 V 40 9V 20 8V 7V 0 8 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 140 TJ = −55°C 140 VGE = 17 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 120 100 80 60 11 V 40 10 V 20 9V 7 V to 8 V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 0 120 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 8 0 Figure 3. Output Characteristics 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) 16 Figure 4. Typical Transfer Characteristics 4.50 10000 4.00 Cies IC = 80 A 3.50 CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 8 3.00 IC = 40 A 2.50 2.00 IC = 20 A 1.50 IC = 5 A 1.00 1000 100 Coes Cres 0.50 0 −75 −25 25 75 125 175 10 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 90 100 NGTB50N60SWG TYPICAL CHARACTERISTICS 20 TJ = 25°C 80 40 20 0 0.5 1 1.5 2 15 VCE = 480 V 10 5 0 2.5 VF, FORWARD VOLTAGE (V) 40 60 80 100 QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 20 0 120 140 1000 1.2 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 1 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) TJ = 150°C 60 0 0.8 0.6 0.4 td(off) 100 tf td(on) tr 10 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 0.2 1 0 0 Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 100 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 2.5 160 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 120 1.5 1 0.5 0 tf 100 td(off) td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1 4 16 28 40 52 64 76 88 4 20 32 44 56 68 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. Current http://onsemi.com 4 80 NGTB50N60SWG 1000 1.6 VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 1.4 1.2 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) TYPICAL CHARACTERISTICS 1 0.8 0.6 0.4 td(off) tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V IC = 50 A TJ = 150°C 0.2 0 1 15 5 25 35 45 55 65 75 5 85 35 45 55 65 75 Figure 13. Switching Loss vs. RG Figure 14. Switching Time vs. RG 85 1000 1.2 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) 25 RG, GATE RESISTOR (W) 1.4 1 0.8 0.6 0.4 VGE = 15 V IC = 50 A RG = 10 W TJ = 150°C 0.2 0 175 225 275 325 375 425 475 td(off) tf 100 td(on) tr 10 1 175 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE VGE = 15 V IC = 50 A RG = 10 W TJ = 150°C 225 275 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Switching Time vs. VCE 1000 1000 50 ms 100 10 dc operation IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 15 RG, GATE RESISTOR (W) 100 ms 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 100 10 VGE = 15 V, TC = 125°C 0.01 1 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 18. Reverse Bias Safe Operating Area Figure 17. Safe Operating Area http://onsemi.com 5 NGTB50N60SWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.87 20% R(t) (°C/W) 0.1 10% Junction R1 R2 Rn C2 Cn Case 2% Ci = ti/Ri 0.01 1% C1 Single Pulse 0.001 0.000001 ti (sec) Ri (°C/W) 5% 0.00001 0.04077 0.09054 0.16141 0.21558 0.24842 1.0E−4 5.48E−5 0.002 0.03 0.1 0.11759 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 RqJC = 1.46 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn Ci = ti/Ri 1% C1 0.00001 C2 Cn Case Ri (°C/W) 0.18019 0.37276 0.45472 0.33236 0.11759 ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance http://onsemi.com 6 10 100 1000 NGTB50N60SWG Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTB50N60SWG Figure 22. Definition of Turn On Waveform http://onsemi.com 8 NGTB50N60SWG Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 NGTB50N60SWG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K W J F 2 PL D 3 PL 0.25 (0.010) M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 4: PIN 1. 2. 3. 4. H G DIM A B C D E F G H J K L N P Q U W INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 GATE COLLECTOR EMITTER COLLECTOR S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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