IGBT

NGTB50N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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50 A, 600 V
VCEsat = 2.4 V
Eoff = 0.60 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
This is a Pb−Free Device
C
Typical Applications
• Inductive Heating
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
Gate−emitter voltage
VGE
$20
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
100
50
200
A
G
C
TO−247
CASE 340L
STYLE 4
E
A
100
50
A
MARKING DIAGRAM
V
W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
50N60SW
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N60SWG
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 0
1
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB50N60SW/D
NGTB50N60SWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.87
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.46
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 150°C
VCEsat
−
−
2.4
2.6
2.6
−
V
VGE = VCE, IC = 150 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
3100
−
pF
Coes
−
120
−
Cres
−
80
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
nC
Qg
135
Qge
27
Qgc
67
td(on)
70
tr
32
td(off)
144
tf
66
Eoff
0.60
mJ
td(on)
70
ns
tr
36
td(off)
150
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15V
Turn−off switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15V
ns
tf
85
Eoff
1.11
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 150°C
VF
1.2
1.11
TJ = 25°C
IF = 25 A, VR = 200 V
diF/dt = 200 A/ms
trr
376
ns
Qrr
4145
nc
Irrm
22
A
Turn−off switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N60SWG
TYPICAL CHARACTERISTICS
140
TJ = 25°C
VGE = 17 V to 15 V
120
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
13 V
100
80
60
11 V
40
10 V
20
9V
7 V to 8 V
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
120
VGE = 17 V
to 13 V
100
80
60
11 V
10 V
40
9V
20
8V
7V
0
8
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
TJ = −55°C
140
VGE = 17 V
to 13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
120
100
80
60
11 V
40
10 V
20
9V
7 V to 8 V
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
0
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
8
0
Figure 3. Output Characteristics
4
8
12
VGE, GATE−EMITTER VOLTAGE (V)
16
Figure 4. Typical Transfer Characteristics
4.50
10000
4.00
Cies
IC = 80 A
3.50
CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
8
3.00
IC = 40 A
2.50
2.00
IC = 20 A
1.50
IC = 5 A
1.00
1000
100
Coes
Cres
0.50
0
−75
−25
25
75
125
175
10
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
90 100
NGTB50N60SWG
TYPICAL CHARACTERISTICS
20
TJ = 25°C
80
40
20
0
0.5
1
1.5
2
15
VCE = 480 V
10
5
0
2.5
VF, FORWARD VOLTAGE (V)
40
60
80
100
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
20
0
120
140
1000
1.2
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
1
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
TJ = 150°C
60
0
0.8
0.6
0.4
td(off)
100
tf
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.2
1
0
0
Eoff, TURN−OFF SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
100
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
2.5
160
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2
SWITCHING TIME (ns)
IF, FORWARD CURRENT (A)
120
1.5
1
0.5
0
tf
100
td(off)
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
4
16
28
40
52
64
76
88
4
20
32
44
56
68
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. Current
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4
80
NGTB50N60SWG
1000
1.6
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
1.4
1.2
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
TYPICAL CHARACTERISTICS
1
0.8
0.6
0.4
td(off)
tf
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 50 A
TJ = 150°C
0.2
0
1
15
5
25
35
45
55
65
75
5
85
35
45
55
65
75
Figure 13. Switching Loss vs. RG
Figure 14. Switching Time vs. RG
85
1000
1.2
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS
(mJ)
25
RG, GATE RESISTOR (W)
1.4
1
0.8
0.6
0.4
VGE = 15 V
IC = 50 A
RG = 10 W
TJ = 150°C
0.2
0
175
225
275
325
375
425
475
td(off)
tf
100
td(on)
tr
10
1
175
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
VGE = 15 V
IC = 50 A
RG = 10 W
TJ = 150°C
225
275 325
375
425 475
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
1000
50 ms
100
10
dc operation
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
15
RG, GATE RESISTOR (W)
100 ms
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
100
10
VGE = 15 V, TC = 125°C
0.01
1
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB50N60SWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.87
20%
R(t) (°C/W)
0.1
10%
Junction R1
R2
Rn
C2
Cn
Case
2%
Ci = ti/Ri
0.01
1%
C1
Single Pulse
0.001
0.000001
ti (sec)
Ri (°C/W)
5%
0.00001
0.04077
0.09054
0.16141
0.21558
0.24842
1.0E−4
5.48E−5
0.002
0.03
0.1
0.11759
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
RqJC = 1.46
R(t) (°C/W)
1
0.1
50% Duty Cycle
20%
10%
5%
Junction R1
2%
0.01
Rn
Ci = ti/Ri
1%
C1
0.00001
C2
Cn
Case
Ri (°C/W)
0.18019
0.37276
0.45472
0.33236
0.11759
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
R2
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
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6
10
100
1000
NGTB50N60SWG
Figure 21. Test Circuit for Switching Characteristics
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7
NGTB50N60SWG
Figure 22. Definition of Turn On Waveform
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8
NGTB50N60SWG
Figure 23. Definition of Turn Off Waveform
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9
NGTB50N60SWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
W
J
F 2 PL
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
ON Semiconductor and
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NGTB50N60SW/D