30 V, 27 A, Single N-Channel, u8FL Power MOSFET

NTTFS4C25N
Power MOSFET
30 V, 27 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
17 mW @ 10 V
30 V
Symbol
N−Channel MOSFET
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
7.7
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
1.63
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
12.2
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
PD
4.1
W
TA = 25°C
ID
5.0
A
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
5.8
TA = 85°C
Steady
State
TA = 25°C
PD
0.69
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
27
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
20.2
TA = 25°C, tp = 10 ms
IDM
81
A
TJ,
Tstg
−55 to
+150
°C
IS
17
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 16 Apk, L = 0.1 mH, RG = 25 W) (Note 3)
EAS
13
mJ
TL
260
°C
TC = 85°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
20
W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 11 Apk, EAS = 6 mJ.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
G (4)
S (1,2,3)
MARKING DIAGRAM
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4C25
AYWWG
G
D
D
D
D
3.8
Power Dissipation
RqJA (Note 2)
Pulsed Drain Current
D (5−8)
9.1
TA = 85°C
27 A
26.5 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
4C25
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C25NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
NTTFS4C25NTWG
WDFN8
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C25N/D
NTTFS4C25N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
6.2
Junction−to−Ambient – Steady State (Note 4)
RqJA
76.7
Junction−to−Ambient – Steady State (Note 5)
RqJA
210
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
30.8
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 4.4 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
15.3
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
4.5
mV/°C
VGS = 10 V
ID = 10 A
13
17
VGS = 4.5 V
ID = 9 A
21
26.5
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
23
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
500
VGS = 0 V, f = 1 MHz, VDS = 15 V
295
pF
85
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
5.1
Threshold Gate Charge
QG(TH)
0.9
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.7
Gate Plateau Voltage
VGP
3.3
V
10.3
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 20 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 20 A
0.170
1.7
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.0
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 10 A, RG = 3.0 W
tf
32
10
3.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTTFS4C25N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
4.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25
ns
13
2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.2
V
18.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
9.8
8.4
5.7
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NTTFS4C25N
TYPICAL CHARACTERISTICS
40
40
4.5 V to 10 V
3.8 V
25
3.6 V
20
3.4 V
15
3.2 V
10
3.0 V
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.0 V
30
TJ = 25°C
0
1
2
3
0
0.012
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
0.045
1.5
2.0
2.5
3.0
3.5
4.0
TJ = 25°C
0.025
0.015
0.005
VGS = 10 V
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
1.4
1.3
1.2
1.1
1.0
0.9
−25
4.5 5.0
VGS = 4.5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.0
0.035
Figure 3. On−Resistance vs. VGS
0.8
0.7
−50
0.5
Figure 2. Transfer Characteristics
0.022
1.5
0
Figure 1. On−Region Characteristics
0.032
1.6
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.042
1.7
TJ = 125°C
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 30 A
3.0
20
TJ = 25°C
5
4
0.052
0.002
30
2.8 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
35
0
VDS = 5 V
4.2 V
0
25
50
75
100
125
150
1000
TJ = 125°C
100
TJ = 85°C
10
1
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4C25N
800
VGS = 0 V
TJ = 25°C
700
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
Ciss
600
500
Coss
400
300
200
Crss
100
0
0
5
10
15
20
25
30
10
QT
8
6
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
2
12
20
IS, SOURCE CURRENT (A)
tr
10
td(on)
td(off)
1
VDD = 15 V
ID = 15 A
VGS = 10 V
VGS = 0 V
16
14
12
10
8
TJ = 25°C
TJ = 125°C
6
4
2
1
10
0
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
10 ms
100 ms
1 ms
10 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
t, TIME (ns)
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
ID, DRAIN CURRENT (A)
8
Figure 7. Capacitance Variation
tf
0.01
6
Qg, TOTAL GATE CHARGE (nC)
18
0.1
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
0.1
Qgd
Qgs
4
100
6
ID = 11 A
5
4
3
2
1
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4C25N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
20%
10 10%
5%
2%
1
1%
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
30
ID, DRAIN CURRENT (A)
25
GFS (S)
20
15
10
5
0
0
5
10
15
20
25
30
35
TA = 85°C
10
1
1.E−08
40
1.E−07
1.E−06
TA = 25°C
1.E−05
1.E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTTFS4C25N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NTTFS4C25N/D