NTTFS4C06N Power MOSFET 30 V, 67 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(on) MAX 4.2 mW @ 10 V 30 V • DC−DC Converters • Power Load Switch • Notebook Battery Management N−Channel MOSFET D (5−8) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 18 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.16 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25.6 A Continuous Drain Current RqJA (Note 2) TA = 85°C S (1,2,3) 18.5 TA = 25°C PD 4.4 W TA = 25°C ID 11 A TA = 85°C 8 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.81 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 67 A Power Dissipation RqJC (Note 1) TC = 25°C PD 31 W TA = 25°C, tp = 10 ms IDM 166 A TJ, Tstg −55 to +150 °C IS 28 A Pulsed Drain Current TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) MARKING DIAGRAM 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4C06 A Y WW G 4C06 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 49 Drain to Source dV/dt dV/dt 7 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk, L = 0.1 mH, RG = 25 W) (Note 3) EAS 68 mJ TL 260 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) G (4) 13 TA = 85°C Steady State 67 A 6.1 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Power Dissipation RqJA ≤ 10 s (Note 1) ID MAX °C ORDERING INFORMATION Device Package Shipping† NTTFS4C06NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS4C06NTWG WDFN8 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 20 A, EAS = 20 mJ. © Semiconductor Components Industries, LLC, 2014 February, 2014 − Rev. 1 1 Publication Order Number: NTTFS4C06N/D NTTFS4C06N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 4.1 Junction−to−Ambient – Steady State (Note 4) RqJA 58 Junction−to−Ambient – Steady State (Note 5) RqJA 154.3 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 28.3 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.4 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 3.8 mV/°C VGS = 10 V ID = 30 A 3.4 4.2 VGS = 4.5 V ID = 30 A 4.9 6.1 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 58 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 15 V 1683 3366 841 1682 40 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 11.6 16.2 Threshold Gate Charge QG(TH) 2.6 3.6 Gate−to−Source Charge QGS 4.7 6.6 Gate−to−Drain Charge QGD 4.0 5.6 Gate Plateau Voltage VGP 3.1 Total Gate Charge pF VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.023 26 nC V 36 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4C06N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 10 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 32 tf 5.0 td(ON) 8.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 18 28 ns 24 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.63 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 17 ns 17 22 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTTFS4C06N TYPICAL CHARACTERISTICS 3.4 V 3.6 V 80 TJ = 25°C 4.0 V to 10 V 50 3.0 V 40 30 2.8 V 20 2.2 V 10 2.6 V 1 1.5 2 2.5 40 30 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Figure 2. Transfer Characteristics ID = 30 A 0.014 0.012 0.010 0.008 0.006 0.004 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 5 0.0060 TJ = 25°C 0.0055 VGS = 4.5 V 0.0050 0.0045 0.0040 VGS = 10 V 0.0035 0.0030 0.0025 0.0020 0.0015 0.0010 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 TJ = −55°C Figure 1. On−Region Characteristics 0.016 1.5 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.018 1.6 TJ = 125°C 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0.002 3.0 50 0 3 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.5 60 10 2.4 V 0 0 VDS = 5 V 70 3.2 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 1.4 1.3 1.2 1.1 1 0.9 1000 TJ = 125°C 100 TJ = 85°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4C06N 2000 C, CAPACITANCE (pF) 1800 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C Ciss 1600 1400 1200 Coss 1000 800 600 400 200 0 Crss 0 5 10 15 20 25 30 0 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A Qgs 2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 20 td(off) tr td(on) 10 VGS = 0 V 18 IS, SOURCE CURRENT (A) t, TIME (ns) Qgd Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge tf 16 14 12 10 8 6 TJ = 125°C 4 TJ = 25°C 2 1 10 100 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 ms 10 10 ms 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.01 0.1 1 ms dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) 4 Figure 7. Capacitance Variation 100 0.1 6 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 1 QT 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1.0 10 100 20 ID = 20 A 16 12 8 4 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 15 NTTFS4C06N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 20% 10% 5% 2% 1% 1 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 PULSE TIME (sec) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 100 ID, DRAIN CURRENT (A) GFS (S) Figure 13. Thermal Response 0 5 10 15 20 25 30 35 40 45 50 55 TA = 25°C 1 1.0E−08 60 TA = 85°C 10 1.0E−07 1.0E−06 1.0E−05 1.0E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 NTTFS4C06N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X L C 6X 0.10 C DETAIL A SEATING PLANE DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* K E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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