NTTFS4C10N D

NTTFS4C10N
Power MOSFET
30 V, 44 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V(BR)DSS
RDS(on) MAX
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
7.4 mW @ 10 V
30 V
Symbol
N−Channel MOSFET
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
13.3
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.09
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
18.2
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
PD
3.9
W
TA = 25°C
ID
8.2
A
Continuous Drain
Current RqJA (Note 2)
TA = 80°C
TA = 80°C
PD
0.79
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
44
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
23.6
TA = 25°C, tp = 10 ms
IDM
128
A
TJ,
Tstg
−55 to
+150
°C
IS
20
A
dV/dt
6.0
V/ns
EAS
31
mJ
TL
260
°C
TC = 80°C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
33
W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 A, EAS = 14 mJ.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
S (1,2,3)
MARKING DIAGRAM
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4C10
AYWWG
G
D
D
D
D
6.1
TA = 25°C
Operating Junction and Storage Temperature
G (4)
13.6
Power Dissipation
RqJA (Note 2)
Pulsed Drain Current
D (5−8)
9.9
TA = 80°C
Steady
State
44 A
11 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
4C10
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C10NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
NTTFS4C10NTWG
WDFN8
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C10N/D
NTTFS4C10N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.3
Junction−to−Ambient – Steady State (Note 4)
RqJA
59.9
Junction−to−Ambient – Steady State (Note 5)
RqJA
157.8
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
31.8
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 7.1 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.5
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
4.5
mV/°C
VGS = 10 V
ID = 30 A
5.9
7.4
VGS = 4.5 V
ID = 15 A
8.8
11
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
43
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
993
VGS = 0 V, f = 1 MHz, VDS = 15 V
574
pF
163
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
9.7
Threshold Gate Charge
QG(TH)
1.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.8
Gate Plateau Voltage
VGP
3.2
V
18.6
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.164
2.8
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
9.0
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
30
14
7.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
ns
NTTFS4C10N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
6.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25
ns
18
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.80
TJ = 125°C
0.67
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
23.3
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
12.7
10.6
8.3
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
ns
nC
NTTFS4C10N
4.0 V
4.2 V to 10 V
80
3.8 V
TJ = 25°C
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
1
2
3
4
40
30
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 2. Transfer Characteristics
ID = 30 A
0.012
0.010
0.008
0.006
0.004
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
0.020
4.5 5.0
TJ = 25°C
0.018
0.016
0.014
0.012
VGS = 4.5 V
0.010
0.008
VGS = 10 V
0.006
0.004
0.002
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
Figure 1. On−Region Characteristics
0.014
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.016
1.6
TJ = 125°C
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.018
3.0
50
0
5
0.020
0.002
60
10
2.6 V
0
VDS = 5 V
70
ID, DRAIN CURRENT (A)
65
60
55
50
45
40
35
30
25
20
15
10
5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.4
1.3
1.2
1.1
1.0
0.9
TJ = 150°C
1000
TJ = 125°C
100
TJ = 85°C
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
30
NTTFS4C10N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
800
Coss
600
400
Crss
200
0
0
5
10
15
20
25
30
QT
9
8
7
6
5
Qgs
4
Qgd
3
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
1
0
0
2
4
6
8
10
20
IS, SOURCE CURRENT (A)
18
td(on)
tr
td(off)
tf
1
10
16
14
12
10
8
6
4
0
0.4
100
20
VGS = 0 V
TJ = 125°C
2
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
100
ID, DRAIN CURRENT (A)
18
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
0.01
16
Figure 7. Capacitance Variation
100
0.1
14
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
12
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
14
ID = 17 A
12
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
150
NTTFS4C10N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
60
100
ID, DRAIN CURRENT (A)
50
GFS (S)
40
30
20
10
0
0
10
20
30
40
50
60
70
TA = 25°C
1
1.E−08
80
TA = 85°C
10
1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
http://onsemi.com
6
NTTFS4C10N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTTFS4C10N/D