NVTFS4C06N D

NVTFS4C06N
Power MOSFET
30 V, 4.2 mW, 71 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVTFS4C06NWF − Wettable Flanks Product
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
4.2 mW @ 10 V
30 V
71 A
6.1 mW @ 4.5 V
N−Channel MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
D (5−8)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
21
A
TA = 25°C
Continuous Drain
Current RqJA
(Notes 1, 2, 4)
Power Dissipation RqJA
(Note 1, 2, 4)
Continuous Drain
Current RqJC (Note 1,
3, 4)
TA = 100°C
TA = 25°C
Steady
State
Pulsed Drain Current
PD
TA = 25°C, tp = 10 ms
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, IL = 26 Apk, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAM
71
TA = 100°C
Operating Junction and Storage Temperature
W
1.6
ID
TA = 25°C
S (1,2,3)
3.1
PD
TA = 100°C
Power Dissipation
RqJC (Note 1, 3, 4)
G (4)
15
TA = 100°C
TA = 25°C
ID MAX
1
50
A
37
W
WDFN8
(m8FL)
CASE 511AB
4C06
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
18
IDM
367
A
TJ,
Tstg
−55 to
+175
°C
IS
33
A
EAS
34
mJ
TL
260
°C
06WF
A
Y
WW
G
= Specific Device Code for
NVMTS4C06N
= Specific Device Code of
NVTFS4C06NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Case − Steady State (Drain)
(Notes 1 and 4)
RqJC
4.1
Junction−to−Ambient – Steady State
(Notes 1 and 2)
RqJA
48
Unit
°C/W
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2 2 oz. Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
Publication Order Number:
NVTFS4C06N/D
NVTFS4C06N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
14.4
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
2.2
3.8
V
mV/°C
VGS = 10 V
ID = 30 A
3.4
4.2
VGS = 4.5 V
ID = 30 A
4.9
6.1
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
58
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
1683
VGS = 0 V, f = 1 MHz, VDS = 15 V
841
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.023
CRSS
pF
40
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.0
Gate Plateau Voltage
VGP
3.1
V
26
nC
Total Gate Charge
11.6
2.6
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
nC
4.7
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
32
tf
5.0
td(ON)
8.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
18
28
ns
24
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.8
TJ = 125°C
0.63
tRR
ta
tb
1.1
V
34
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
17
ns
17
22
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS4C06N
TYPICAL CHARACTERISTICS
80
3.4 V
3.6 V
TJ = 25°C
4.0 V to 10 V
50
3.0 V
40
30
2.8 V
20
2.2 V
10
2.6 V
50
40
30
TJ = 125°C
20
0.5
1
1.5
2
2.5
3
TJ = −55°C
0
1
1.5
2
2.5
3
3.5
4
4.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 30 A
0.002
3.0
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
5
0.0060
TJ = 25°C
0.0055
VGS = 4.5 V
0.0050
0.0045
0.0040
VGS = 10 V
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
0
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
60
10
2.4 V
1.6
VDS = 5 V
70
3.2 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
1.4
1.2
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NVTFS4C06N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
1800
VGS, GATE−TO−SOURCE VOLTAGE (V)
2000
VGS = 0 V
TJ = 25°C
Ciss
1600
1400
1200
Coss
1000
800
600
400
200
Crss
0
0
5
10
15
20
25
QT
8
6
4
Qgd
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
Qgs
2
0
30
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
20
VDD = 15 V
ID = 15 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
tr
td(on)
10
VGS = 0 V
18
100
tf
16
14
12
10
8
6
TJ = 125°C
4
TJ = 25°C
2
1.0
1
10
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
ID, DRAIN CURRENT (A)
t, TIME (ns)
10
dc
10
100 ms
1
0.1
1 ms
VGS = 10 V
TC = 25°C
650 mm2 2 oz Cu Pad
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVTFS4C06N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
RqJA(t) (°C/W)
10
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
100
130
120
110
100
90
80
70
60
50
40
30
20
10
0
IPEAK, DRAIN CURRENT (A)
GFS (S)
Figure 12. Thermal Response
0
5
10
15
20
25
30
35
40
45
50
55
TJ(initial) = 25°C
10
1
1.0E−06
60
TJ(initial) = 125°C
1.0E−05
1.0E−04
ID (A)
TAV, TIME IN AVALANCHE (s)
Figure 13. GFS vs. ID
Figure 14. Avalanche Characteristics
1.E−03
ORDERING INFORMATION
Package
Shipping†
NVTFS4C06NTAG
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C06NWFTAG
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C06NTWG
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS4C06NWFTWG
WDFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS4C06N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Sales Representative
NVTFS4C06N/D